SW S O T-3 2 3 Search Results

pmi SW01

Abstract: pmi sw 01 SW01B SW01F SW01 SW-01 D100PA SW02 SW-01B SW-02
Contextual Info: - 274 S W -0 1 ,S W -0 2 I N, D, [T [T s ,E v -E GND [7 s, U o ,[ T IN , T S P S T JF E T IRf<= Z>J^c uj'N 2 lO °2 JnrC C O N T R O L L O G IC m v* Tj] n-c 3 s3 To] d 3 S W ITC H STATE SW-01 SW-02 L O G IC INy 1 NO TE: ON OFF IN y = IN P U T 1-4 7 ] in3

BUW52

Abstract: transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A
Contextual Info: 7^5^537 ppgaa?! M • S G S -T H O M S O N ■ [L d e T F G M O ! S G S - T HO MS ON B 3ÜE U W 5 2 D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN ABSOLUTE MAXIMUM RATINGS

design opto interrupter

Abstract: 270 Phototransistor br A 708
Contextual Info: • I b ô O E 2 4 5 0 0 0 0 1 7 b 3 OPTO T E C H N O L O G Y INC OPTO TECHNOLOGY OPTICAL SWITCH T Y P E O TS 2 7 0 Features ■ Side mount sw itch ■ .0 1 0 aperture ■ Phototransistor Description The O T S 2 7 0 optical sw itch fe atu res a G aA s infrared

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itch in g D iodes MMBD2835LT1 MMBD2836LT1 CATHODE ANODE 3 o- - » -N - O 1 —O 2 % CATHODE 2 C A S E 318-08, S T Y L E 12 S O T - 23 T O -2 3 6 A B M A XIM U M R AT IN G S (EACH DIODE) Rating Reverse Voltage

Contextual Info: r z 7 S G S - T A 7 # Mmn H O M S O N H J O T T G M D O i B Y T 3 - 2 ^ 4 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-OFF SW ITCHING S U IT A B L E A P P L IC A T IO N S ■ FREE W HEELING DIODE IN CONVERTERS

230P

Abstract: OA41
Contextual Info: r z 7 S C S -T H O M S O N ^ 7# B Y T 2 3 0 P I V - 2 0 0 - ^ 4 0 0 FAST RECOVERY RECTIFIER DIODES • . ■ ■ VER Y LOW REVERSE RECOVERY TIME VER Y LOW SW ITCHING LOSSES LOW NOISE TURN-OFF SW ITCHING INSULATED : Capacitance 45pF Insulating voltage 2500

02N0V10

Abstract: 2B51
Contextual Info: G KM _ LIMIT GKM SW ITCH M T G -G K -2 0 7 D 0 3 CM 90" KEY SH O W N IN O P T IO N A L A C T U A T IN G P O SIT IO N S. I V O I O I— 2 16 MAX_ .6 3 O _l CL CE SW ITCH S ID E E X IT C A B L E NO CABLE B B O T T O M E X IT C A B L E 1 6 S ID E E X IT C O N N E C T O R

Contextual Info: an A M P com pany GaAs SPST Switch DC-3 GHz SW-212/214 V 2 .00 FP-13 Features Dg o • Fast S w itch in g S p eed , 6 ns T ypical • • I 'ltra Low DC P o w e r C o n s u m p tio n Low Loss SW -212 , T e rm in a te d (SW -214) X 0 37S t 0 020 Guaranteed Specifications *

diode lt 238

Abstract: scr 2501 diode lt 436 MOTOROLA SCR 2501 OPTO diode 736 ADI1114 motorola opto scr SCR 106-4
Contextual Info: 6 3 6 7 2 5 5 MOTOROLA SC D I O D E S /OPTO 64C 6 8 28 4 b4 ' D DE | t . 3 t , 7 2 S S s T-41-73 □□bñEñ4 S M0C74T1 M0C74U1 o Advance Information SLOTTED OPTICAL SW ITCH SLOTTED OPTICAL SCR SWITCH These devices consist of a gallium arsenide infrared emitting

40 rf 204

Abstract: top 204
Contextual Info: an A M P com pany GaAs SPDT Switch DC - 3 GHz SW-202/204 V3.00 Features FP-13 • F astSw itching S p e ed , 6 n s T y p ic a l • U Jb a Low D C Pow erC o n su m p t b n • Low L o ss SW -2 0 2 , Temi inated (SW -204) Guaranteed Specifications* (From -55°C to +85°C)

81 211 W 07

Contextual Info: f a n A M P ,c o m p a n y GaAs SPST Switch DC - 3 GHZ SW-211/213 V2.00 Features TO-5-3 • F astSw itching S p e ed , 6 n s T y p ic a l • U Jtta Low DC Pow erC o n su m p t b n • Low L oss SW -2 1 1 , Temi inated (SW -213) Guaranteed Specifications* (From55 c to+85°c)

Contextual Info: r z 7 ^7# S G S - T H O M S O N [MStiftmiiOTMigS BYT 3 0 P I-2 0 0 ^ 4 0 0 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TURN-OFF SW ITCHING INSULATED : Capacitance 15pF SUITAB LE A P P L IC A T IO N S • FREE WHEELING DIODE IN CONVERTERS

Contextual Info: 3-INPUT/2-INPUT VIDEO SWITCH NJM25Q6 T h e N JM 2506 is video sw itch for video a n d a u d io signal. It co n ta in s 3 input-1 o u tp u t a n d 2 input-1 o u tp u t video switch. 3 in p u t-1 o u tp u t sw itch h a s c lam p fu n ctio n a n d so is ap p lied to fixed D C level o f video signal. Its op eratin g supply voltage ran g e

apl101

Abstract: DMP16 NJM2506 NJM2506D NJM2506V NJMZ506V SSOP16
Contextual Info: NJM2506 3 -IN P U T /2 -IN P U T VIDEO SWITCH • GENERAL DESCRIPTION PACKAGE OUTLINE T h e N J M 2 5 0 6 is v id e o s w i tc h f o r v id e o a n d a u d i o s ig n a l , [t c o n ta in s 3 in p u t-1 o u tp u t a n d 2 in p u t-] o u tp u t v id e o sw itch . 3 in p u t- 1

Contextual Info: THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC FT RESERVED. REV I S I O N S D I ST LTR DE SC R I P T I O N D WN DATE REVISED EC 0 G 3 B - 0 3 2 6 - 0 3 I 3J1JN 2 0 0 3 sw REVISED

Contextual Info: TOSHIBA 2SC5172 2 S C 5 1 72 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm SW ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING APPLICATIONS 10 ± 0 .3 HIGH SPEED DC-DC CONVERTER APPLICATIONS • 2.7ÌQ .2 <T\ O o Excellent Switching Times

Contextual Info: SyÛKQM GaAs SPDT Switch DC-2 GHz SW-201/203 • Fast Switching Speed, 6ns Typical ■ Ultra Low DC Power Consumption ■ Low Loss SW-201 , Terminated (SW-203) TO-5-3 o.3s (9.14 t 0.S> 0.200 MAX _ t Guaranteed Specifications* 0 SOO MIN (12 *) (From - 55°C to +85°C)

mosfet ir 840

Abstract: 250A darlington transistor SF200AA20 FBA50BA50 FCA75BC50 SF150AA50 sqd65bb75 FBA75BA SF150AA20 FBA75BA50
Contextual Info: SANSHA ELECTRIC liF G 37E CO l i 7 ^ ^ 1 2 4 3 «- D Ü Q O O O S 3> I I • t —y — — I M O iin r m m h S F E T S / T R rnn A i i i N i S T I S £ f 1J n I S i l i- T O R Id Voss A V Sw itching Tim e ns

Q533

Abstract: G307 TH 2053.3 ZVP2206L
Contextual Info: "tS PLESSEY SENICOND/DISCRETE 7 2 2 0 5 3 3 P L E S S E Y D E ^ 7 2 5 Q533 95D S E M I C O N D / D I S C R E T E T P-channel enhancement mode vertical D M O S FET ' □GGSflDl 05601 37'25 ZVP2206 FEATURES • Com pact geometry • Fast sw itching speeds •

2SJ112

Abstract: diode t25 4 G6 K650 2SK398 Hitachi 2SJ HITACHI 2SJ* TO-3 HITACHI 2SK* TO-3 T3F3
Contextual Info: HITACHI/-COPTOELECTRONICS} 73 73C 09948 — T p f ü B T t r e ^ H I T A O H I / .UH I O t L b ü I R U Ñ i O S 2 S J T I 2 D e 1 m 42¿BD5 OOCHTMÜ □ D T-3f-^3 - — S ILIC O N P -C H A N N EL M O S FET HIGH SPEED POWER SW ITCHING,

Contextual Info: www.teleqaertner.com SW 8 125-120 SW 9 7157 m +49 o I co o Fax: S ¡2 O CO T— i.i o — CO 125-0 -2 o ‘tid- o +49 7157 O o C o O 0 O CQ Phone: « p ^ CO Germany 3 o cn o c Components Bautale Materials/Material Finish/Oberfläche centre contact Innenkontakt

5D diode

Abstract: ZVN3310 00573E D7950 sw S O T-3 2 3
Contextual Info: PLESSEY SEHICOND/DISCRETE TS 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /DI S C R E T E DE 1 7 2 5 G 533 □□□S 7 3 S 3 | 9S D 0 5 7 3 5 T '3 S - i5 ZVN 3310 N-channel enhancement mode vertical D M O S FET FEATURES • Com pact geometry • Fast sw itching speeds

25b44

Abstract: transistor 546 transistor c 546 b BU 103 A transistor MAS 20 RCA transistor BU 104 mas 6 rca ZD 103 ZD 103 ma diagram pulsa
Contextual Info: A E C CORP 17E D Da a T 4 2 b GOGTMa? 4 BU 546 l? iE L iK £ K S \ l3 Q e le c t r o n ic O tatra Techno*og*es r - 3 3 - is Silicon NPN Power Transistor A p p lic a tio n s : Sw itching mode power supply Features: • In triple diffusion technique ' Short sw itching tim e

Ferranti

Contextual Info: PLESSEY SENICOND/DISCRETE llS D l J 7S5D533 0DDS7b7 S | ~ 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 95D 0 5 7 6 7 T 3 1 1.5 - P-channel enhancement mode vertical D M O S FET ZVP0545 FEATURES • Com pact geometry • Fast sw itching speeds