SW 226 N Search Results

SW-227PIN

Abstract: 228-PIN SA203E SW-228-PIN SW-226 SW-226PIN SW-226-PIN SW-227 SW-227-PIN SW-228
Contextual Info: RoHS Compliant GaAs SPDT Switch DC - 4 GHz SW-226/227/228-PIN V5 Features • Terminated SW-226-PIN , High Isolation (SW-227-PIN), Low Loss (SW-228-PIN) • Fast Switching Speed: 6 nS Typical • Ultra Low DC Power Consumption • Lead-Free 7-Lead Ceramic Package

SA203E

Abstract: SW SPDT SW-228 SW-226 SW-227 SE-226 SE226
Contextual Info: GaAs SPDT Switch DC-4 GHz SW-226/227/228 V 2.01 Features ● ● ● ● CR-2 Miniature Ceramic Package Terminated SE-226 , High Isolation (SW-227), Low Loss (SW-228) Fast Switching Speed, 6 ns Typical Ultra Low DC Power Consumption Guaranteed Specifications *

Contextual Info: RoHS Compliant GaAs SPDT Switch DC - 4 GHz SW-226/227/228 V4 Features • Terminated SW-226 , High Isolation (SW-227), Low Loss (SW-228) • Fast Switching Speed: 6 nS Typical • Ultra Low DC Power Consumption • Lead-Free 7-Lead Ceramic Package • RoHS* Compliant and 260°C Reflow Compatible

sw2263

Contextual Info: v •I GaAs SPDT SWITCH MODELS SW-226/227/228 DC-4 GHz Miniature Ceramic Package Terminated SW-226 , High Isolation (SW-227), Low Loss (SW-228) Fast Switching Speed, 6ns Typical Ultra Low DC Power Consumption Guaranteed Specifications* (From - 5 5 ° C t o +85°C )

f 10403

Abstract: SA203E SW SPDT SW-228-PIN SW-226 SW-227 SW-228 5V110
Contextual Info: n/A-COn/ MICROELECTRONICS b'ìE D • 5b421ô3 DDGGfiST 4TÛ ■ M A C O GaAs SPDT Switch DC-4 GHz SW-226Æ27/228 ■ Miniature Ceramic Package ■ Terminated SW-226 , High Isolation (SW-227), Low Loss (SW-228) ■ Fast Switching Speed, 6ns Typical ■ Ultra Low DC Power Consumption

Contextual Info: an A M P com pany GaAs SPDT Switch DC-4 GHz SW-226/227/228 V 2.01 CR-2 Features • M iniature C eram ic P ac k a g e 0.260 " 6 .6 0 ' • T e rm in a te d (SE-226), H igh Iso latio n (SW 227), Low Loss (SW -228) 0.005 t .002 TYP (0.13 ±0 .05) 7 Places

Contextual Info: y tó - m a n A M P co m pa n y GaAs SPOT Switch DC - 4 GHz SW-226/227 Features CR-2 • M iniature C eram ic P ack ag e • • T e rm in a te d SW -226 . H igh Isolation (SW -227) Fast S w itching S p eed . 6 n s T ypical • U ltra Low DC P o w e r C o n su m p tio n

Contextual Info: Afa GaAs SPDT Switch DC-4 GHz SW-226/227/228 • M iniature C eram ic P ackage ■ T erm inated S W -226 , High Isolation (S W -227), Low Loss (S W -228) ■ Fast Switching S peed, 6ns Typical ■ Ultra Low D C Pow er Consum ption CR-2 Guaranteed Specifications*

Contextual Info: GaAs SPDT Switch DC - 4 GHz SW-226/227 V2.00 Features ● ● ● ● CR-2 Guaranteed Specifications* Frequency Range Model Number Insertion Loss DC-4 GHz DC-2 GHz DC-1 GHz DC-0.5 GHz VSWR DC-4 GHz DC-2 GHz DC-1 GHz DC-0.5 GHz Isolation DC-4 GHz DC-2 GHz DC-1 GHz

BU226

Abstract: transistor bu 226 w 4b 139 NPN transistor TO-3
Contextual Info: Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendung: H orizontal-Ablenk-Endstufen in Schwarz-W eiß-Fernsehgeräten Application: H orizontal d e flection circu its in b la ck and white TV-receivers Besondere Merkmale:

Contextual Info: Series N - 50 £2 Straight Jack for corrugated cables Part N um ber C a b le A sse m b ly G roup In stru ctio n 53 K114-C08 N1 C08 6015 Kuppler gerade fur Wellmantelkabel R e m a rk s P a c kin g U nit _ 1 1 SW 22 / Right Angle Jack, clamp Part N um ber C a b le

Contextual Info: Schottky Barrier Beam Lead and Packaged Bridge Quads MA4E400 Series V 2.00 Case Styles Features • Sm all P h y sical Size fo r M icrostrip M ounting • High R eliability • C losely M atch ed Ju n c tio n s fo r H igh Iso latio n • Low , M edium an d H igh B a rrier D io d e s A vailable

Contextual Info: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on

2090-6203-00

Abstract: 2090621
Contextual Info: • • • • • Octave, Multi-Octave And Decade Frequency Coverage Low Insertion Loss Excellent Amplitude And Phase Balance High Isolation Between Output Ports LowVSWR e Power: 80 Watts Maximum • Meets MIL-E-5400 and MIL-E-16400 Environments New designs include operation through

Contextual Info: ASP-22083-01 .7 0 0 + 7 NOTE: .000 1. OMIT PINS FROM PO SIT ION S 11 & 12. 2. P A R T S TO BE P A C K A G E D IN TUBES. 1 3. O R E P R E S E N T S A CR IT IC AL DIMENSION '. 0 1 5 P O SIT ION S x . 1 0 0 .0 5 0 REF — .2 0 0 .1 0 0 REF REF □ = UNFILLED

Contextual Info: MG400J2YS50 H IGH P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P PL IC A T IO N S. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode H ighspeed : tf=0.30,«s Max. (Ic = 400A)

MSIV-TIN32.768kHz

Abstract: SX1555-R-32.768KHZ
Contextual Info: S PT201A SP POCSAG Pager Controller/LCD Driver OCT. 05, 2001 Version 1.0 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

1736a

Abstract: 1733a N5542A
Contextual Info: Agilent 173x Series Fibre Channel Test Solution N_Port ID virtualization test capabilities Data Sheet Agilent Technologies, the provider of the SAN Tester application and fibre channel protocol analysis, is enhancing its test applications to address the needs of N_Port ID virtualization

transistor tl 650

Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2sa648 transistor

Abstract: 10M15 2SB434 2SD206 2SA642 2SA648 2SA649 DJ406
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

40w inverter circuit

Contextual Info: DC-AC INVERTER UNIT CXA-L0624-VJL 4.0W SINGLE OUTPUT WITH DIMMING FUNCTION (PRELIMNARY, STANDARD) DESCRIPTION : This DC to AC Inverter was developed for notebook computer and many other low LCD Backlight power supply as low profile applications, either for Note Book PC or Industrial.

Contextual Info: POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES • M e ets MIL-S-19500/394 • C ollector-Base Voltage: up to 100V • Peak Collector Current: 10A • Fa st Sw itch in g • Low Saturation Voltage D E S C R IP T IO N U nitrode power tra n sistors provide a

Contextual Info: -, Incandescent Replacem ent LEDs - iMimu• Sunlight Readable T1 Single Chip D esig n ed to a llo w " fit a n d fo rg e t" re p la ce m e n t o f the less reliable filam ent b u lb , b o th for n e w e q u ip m e n t a n d retro-fit a p p lica tio n s. A vailable in single ch ip a n d m ulti-LED C lu ster w hich all p ro v id e high intensity ; e ffective illum ination o f m ost typ es o f lens assem blies

2SA1283

Contextual Info: 2SA1283 '> i 3 > P N P x í- > 7 jm ? ist ^ 2 S A 1 2 8 3 U , « [ g í í i t f f i í '> ') 3 > P N P I f í í ' > 7 JUjfê h 7 > y ^ S T t . iBŒ tfSi-v □ ^ 7 9«SW '‘;*;iSt,\ 3 e.i:3U -7?}g^Aif± 5 < 1 t i l t , SU n r f e u ító - p , < jl —