SV3 06 Search Results

51H38

Abstract: 52V17 56V32 56V25 51H13 51V47 51V20 57H27 sv420 56H32
Contextual Info: IEC 2001 - da ERRATA CORRIGE 6-02-2001 10:47 Pagina 55 Storage Chokes 55 IEC 2001 - da ERRATA CORRIGE 6-02-2001 10:47 Pagina 57 Storage Chokes LES SELFS DE STOCKAGE A storage inductor is generally located in a switched-mode power supply SMPS between the

Diode SV-02

Abstract: SV-04 F SV-02 diode sv31 SV-04 VR-60SS sv-31 Silicon Varistors
Contextual Info: VF V 1.2±0.2 1 1.5±0.25 70 1.8±0.2 1 2.3±0.25 70 2.35±0.2 1 3.0±0.3 70 3.0±0.3 1 3.8±0.4 70 3.5±0.4 1 4.5±0.45 70 Half-cycle Sinewave Single Shot SV 02YS 200 30 –40 to +130 10 SV 03YS 150 16 –40 to +130 SV 04YS 100 12 SV 05YS 80 SV 06YS 70

Contextual Info: LESHAN RADIO COMPANY, LTD. SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY LBAT54DW1T1G 6 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

LBAT54DW1T1G

Abstract: LBAT54DW SV3 06
Contextual Info: LESHAN RADIO COMPANY, LTD. SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY LBAT54DW1T1G 6 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

THLY6416G1FG-80

Abstract: C17-C24 THLY6416G1FG ftl specification
Contextual Info: TOSHIBA THLY6416G1 FG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.

semiconductor 80L

Contextual Info: TOSHIBA THLY6416G1FG-75,-75L,-80,-80L ABSOLUTE M AXIM UM RATINGS SYMBOL ITEM RATING UNIT NOTES V IN Input Voltage - 0 .3 - V DD + 0.3 V 1 VOUT Output Voltage - 0 . 3 - V DD + 0.3 V 1 V dd Power Supply Voltage -0.3 - 4 .6 V 1 t opr Operating Temperature 0-70

THLY6416G1FG

Contextual Info: TO SH IBA TH LY6416G1FG-75,-75L,-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THLY12N01 A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N01A is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716AFT/AFTL DRAMs on a printed circuit board.

sj 2025

Abstract: CAP SMD X7R 100NF 50V 10 ic sj 2025 ak300/2 Diode SMD SJ 19 0603 100nF/50V avx Diode SMD SJ 24 Diode SMD SJ 7 SMD TRANSISTOR R90 TRANSISTOR ECG 69
Contextual Info: Freescale Semiconductor User’s Guide Document Number: KT33730UG Rev. 1.0, 9/2009 KIT33730EKEVBE Evaluation Board Figure 1. KIT33730EKEVBE Evaluation Board Table of Contents 1 Kit Contents / Packing List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

A70 Circuit Diagrams

Abstract: A70L 2a 280
Contextual Info: TO SH IBA THLY12N01A70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H LY 12N 01A is a 16,7 7 7 ,2 1 6 -word by 64-bit synchronous dynamic RAM module consisting of eight T C 59SM 716A FT/A FTL DRAMs on a printed circuit board.

Contextual Info: Evaluates: MAX11300 MAX11300PMB1 Peripheral Module General Description The MAX11300PMB1 peripheral module Pmod provides the necessary hardware to interface the MAX11300 20-channel programmable mixed-signal I/O device to any system that utilizes Pmod-compatible expansion ports

NT7534

Abstract: NT7534 2.1
Contextual Info: AZ DISPLAYS, INC. COMPLETE LCD SOLUTIONS SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY PART NUMBER: AGM9624A-FN-FBW-02 DATE: APRIL 01, 2008 AZ DISPLAYS, INC. AGM9624A-FN-FBW-02 General Specification Driving IC NT7534 Interace With Paraller MPU 8080 Series Display Specification

UV 471

Abstract: QFP100 SAB9081 SAB9081H TDA8310 DA675
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAB9081 Multistandard Picture-In-Picture PIP controller Preliminary specification Supersedes data of 1999 Jan 05 File under Integrated Circuits, IC02 1999 Nov 12 Philips Semiconductors Preliminary specification Multistandard Picture-In-Picture (PIP)

75F75

Contextual Info: TO SH IBA THLY6416G1 FG-75f-75L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.

dimmer chokes

Abstract: toroid iron power core reference table facon capacitors 7g dimmer Interference suppression noyau de ferrite 31H38 A8 00 60938-1 facon, 7g 31H27 31V38
Contextual Info: IEC 2001 - da ERRATA CORRIGE 6-02-2001 10:47 Power Inductors Universal Application 40 Pagina 40 IEC 2001 - da ERRATA CORRIGE 6-02-2001 10:47 Pagina 41 Iron Powder Core Chokes for EMI Suppression SELFS DE DÉPARASITAGE À NOYAU POUDRE DE FER Iron powder toroidal core chokes with single or double winding are primarily used in the applications

SV-04 F

Abstract: Silicon Varistors VR-60SS VR-61SS sv31 sv-31 SV-04 SV-3 SV3 06 SV2SS
Contextual Info: VF V VF (V) 20 0.2 IF (mA) Part Number 1.5 max 1000 VR-60SS 2.3±0.25 1 2.75±0.25 10 3.1±0.25 70 4.0 max 100 SV-2SS 50 2.0 max 100 SV-3SS 50 SV-4SS 50 1.8±0.2 1 2.15±0.2 10 2.4±0.25 30 IFSM (A) IF (µA) max Rth (j- ) (°C/W) Mass (g) –40 to +100 20

13002l

Abstract: 1602l
Contextual Info: samtec C L P -1 16-02—L -D CLP-110-02-F—0 -P € _ C LP -130-02-L-D CLP-116- 0.- -~OH H ig h re lia b ility Tiger-Oaw contacts S P E C IF IC A T IO N S Materials: .050" x .050" 1,27m m x 1 27m m } m icro pitch OPTIO t- Insulator Material: Blacx Liquid Crystal Polymer

YS 130

Contextual Info: VF V IF (mA) 1.2±0.2 1 1.5±0.25 70 1.8±0.2 1 2.3±0.25 70 2.35±0.2 1 3.0±0.3 70 3.0±0.3 1 3.8±0.4 70 3.5±0.4 1 4.5±0.45 70 IFSM (A) IF (µA) max Half-cycle Sinewave Single Shot SV 02YS 200 30 –40 to +130 10 SV 03YS 150 16 –40 to +130 SV 04YS

all about lcd chip display

Abstract: SAMSUNG LCD GRAPHIC DISPLAY MODULE S6B0716 S6B0716X01-C0C8 S6B0716X11-C0C8
Contextual Info: S6B0716 33 COM / 100 SEG DRIVER & CONTROLLER FOR STN LCD January.2000 Ver. 3.0 Prepared by: Jae-Su, Ko Ko1942@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express written

KS0716

Abstract: KS0716P-H3CC KS0716P-L3CC sv-31
Contextual Info: KS0716 33 COM / 100 SEG DRIVER & CONTROLLER FOR STN LCD January.2000 Ver. 3.0 Prepared by: Jae-Su, Ko Ko1942@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express

Contextual Info: ¿¿PD780021Y, 780022Y, 780023Y, 780024Y NEC APPENDIX A. DEVELOPMENT TOOLS The following development tools are available for system development using the /¿PD780024Y Subseries. Also refer to 5 Cautions on using development tools. (1) Language Processing Software

Contextual Info: ¿¿PD780031Y, 780032Y, 780033Y, 780034Y NEC ★ APPENDIX A. DEVELOPMENT TOOLS The following development tools are available for system development using the /¿PD780034Y Subseries. Also refer to 5 Cautions on using development tools. (1) Language Processing Software

SI 3105 A

Abstract: KS0715 KS0715TB-XX-H0TF KS0715TB-XX-H4TF KS0715TB-XX-L0TF KS0715TB-XX-L4TF KS0715UM-H0CC KS0715UM-H4CC KS0715UM-L0CC KS0715UM-L4CC
Contextual Info: KS0715 33 COM / 100 SEG DRIVER & CONTROLLER FOR STN LCD January.2000 Ver. 4.0 Prepared by: Jae-Su, Ko Ko1942@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express

42H17

Abstract: 42H32 42V20 42H22 42V32 42V25 42H42 Radiohm 42v15 42V15 42V30
Contextual Info: IEC 2001 - da ERRATA CORRIGE 6-02-2001 10:46 Pagina 9 Current-compensated Noise Suppression Chokes 9 IEC 2001 - da ERRATA CORRIGE 6-02-2001 10:46 Pagina 10 Current-compensated Noise Suppression Chokes A distinct category of filters, especially designed to supress the “common mode” or asymmetrical