SUS 2 Search Results

2t751

Abstract: BD243 TO-220-AA 2T75 2N6288 2N6289 2N6290 2N6291 2N6292 2N6293
Contextual Info: 2N6292 FAMILY [n-p-n] silicon f j = 4 MHz min; P j = 40 W max DESCRIPTION •c v CEO(sus) V CER<SUS> V CEV*SUS* V V V 2N TYPES 2N6288 2N6289 2N6290 2N6291 2N6292 2N6293 h FE Epitaxial-Base, Epitaxial-Base, Epitaxial-Base, Epitaxial-Base, Epitaxial-Base,

RCA1A18

Abstract: 40314
Contextual Info: • w, ■ fft ■ . -.X ■ ■ ■ ■ V • - Power Transistors High-Speed-Switching n-p-n and p-n-p Type Selection Charts I CBO —juA Temp.—°C hF E * * at V C E = 10 V V CEO sus V CER (sus) V CEV (sus) v Current—mA V V 0.01 10 0.1 2N2102 FAMILY (n-p-n) General Purpose,

BUL 128 A

Abstract: RCA1A18 2n3053A complementary 40317 2N3053A
Contextual Info: • w, ■fft ■ ■ ■ . -.X ■ ■ V• - Power Transistors High-Speed-Switching n-p-n and p-n-p Type Selection Charts I CBO —juA Temp.—°C hF E * * at V C E = 10 V V CEO sus V CER (sus) V CEV (sus) v Current—mA V V 0.01 10 0.1 2N2102 FAMILY (n-p-n) General Purpose,

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

2N6421

Contextual Info: Back to Bipolar Power Transistors 2N6421 MAXIMUM RATINGS - Absolute-M aximum Values: VcBO_. Vceo sus . Vebo.

germanium transistors NPN

Abstract: CASE TYPE TO13 2N1326 npn germanium 2n539 2N1329 2N539A 2N538A 2N538 Germanium power
Contextual Info: germanium power transistors /*Sl » PNP TO-13 lc M A X = 3A VcEO(SUS) = 30 to 100V Iif e Type# NPN Comple­ ment VCEO(SUS) (Volts) (Volts) @ Ic/VcE (Min-Max @ A/V) 2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 60(Vces) 30(Vces) 80(Vces) IOO(Vces)

PR70

Abstract: GPZA10 7005ZD r-102 R102 DA230 O3002
Contextual Info: Data Sheet Model No.: GPZA10 Zinc Air Button Cell 1.40 Volts Ø5.8 x 3.6mm Ni plated SUS Ni/SUS/Cu clad plate Hearing aid 0.3g 75mAh 3000Ω to 0.9V at 20˚C < 2% at 1 year -18˚C to 50˚C ø3.0±0.2 + R1±0.2 3.6 -0.3 – 2.9±0.15 : : : : : : : : : : 0.1

M208 B1

Abstract: fuji darlington module fuji transistor modules 1di50
Contextual Info: High Hf e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) v CEX(sus) <V) (A) •c hFE (min) (A) VCE

1DI100MA-050

Abstract: 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613
Contextual Info: H igh H f e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) vCEX(sus) <V) •c (A) hFE (min) •c (A)

2N3740

Abstract: 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4898 2N4899 2N4910 2N4911
Contextual Info: NE III ENGLAND SEMI CONDUCT OR 5TE bSbHTTa D = 1-5À VCEO SUS = 4 0 -4 2 5 V fT = 3-10 M H z □□□□□SO lc ( M A X ) Type No. 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4899 2N4900 2N5344 2N4910 2N4911 2N4912 2N3767 VCEQ (SUS) (V) 1C (MAX) (A) 60

Contextual Info: 2N6421 ^1 P *NEW ENGLAND SEMICONDUCTOR MAXIMUM RATINGS - Absolute-Maximum Values: • • VcBO_. VCE0 sus . • V e BO.

rca 40410

Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /

BU106

Abstract: bux18b 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER (sus) = 275 V hFE = 20m in.

RCA410

Abstract: RCA411 RCA1B09
Contextual Info: Power T ransistors High-Voltage n-p-n and p-n-p Type Selection Charts cont’d -hFE V CEO*SUS* V C E X (sUs) 'c V CE V V A V 'c E X mA Temp.—°C V CE^sat^“ V 25 2N6251 FAMILY (n-p-n) High-Voltage Switch f j = 2.5 MHz min; Py to 175 W max BUX17 2N 6249*

RCA1E02

Abstract: 40327 RCA1A15 bu 25200 BUX67B
Contextual Info: w a rn High-Voltage n-p-n and p-n-p Type Selection Charts V CEO *sus V C EX^SUS^ V V •c A V CE V Temp.—°C 25 2N3439 F A M ILY n-p-n) High Voltage, Complementary to 2N5415 Family f yI = 15 M H z min; P y1 = 10 W max 40346 2N34402N4064403902N34392N406340385A U D IO T Y P E S

1B250

Abstract: 2N3742 2N3743 2N3867 2N3868 2N4926 2N4927 2N4930 2N4931 2N5477
Contextual Info: NE Ul E N G L A N D SEMICONDUCTOR I STE D b S b im B 000005E bbl «N ES 7 33" - ^ Ic max = 0 .0 5 to 5A V ceo(sus) = 4 0 "4 5 0 V fl = 3 to 6 0 M H z ^ / PIMP T O -39/T O -5 Case 801 Type No. 2N3743 2N3867 NPN Comple­ ment VCEO (SUS) 00 2N3742 300 2N4926

RCS258

Abstract: RCA 40373 BD182 rca RCA 40363 RCA 40251 40363 2N3055 rca 40411 40411 rca bd142
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ {s a t ) —V 'C E X - m A h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 MHz min; P j to 150 W max

STP4063

Abstract: 2N4063 2N1701 2N4064 CIMax STC40346V2 STC40347V2 STC40348V2 STC40349V2 STC40412V2
Contextual Info: Silicon power transistors NPN MD-14 IC M A X = 1.0 to 3.0A fT = 1.0 to 15 MHz V ceo [sus] — 40 to 350V I lF E @ VcEO[SUS| Type# STC40347V2 STC40348V2 Typical Values (Volts) Ic / V c E (Min-Max @ A /V ) VcE[SAT| @ Ic / I b (V @ A/A) @ V be Ic / V c E 40

rca 40411

Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max

IC 8030

Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
Contextual Info: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3

1431T

Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

RCA423

Abstract: RCA410 RCA411 RCA1B09 RCA1B06 2N6514
Contextual Info: Power T ransistors High-Voltage n-p-n and p-n-p Type Selection Charts cont’d -hFE V CEO*SUS* V C E X (sUs) 'c V CE V V A V 'c E X mA Temp.—°C V CE^sat^“ V 25 150 200 250 275 300 300 350 350 250 225 350 300 400 325* 375 450 Package 15 min 10-50 15 min

BU106

Abstract: BUX18 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

1431T

Abstract: BU106 2N6306 2N6307 2N6308 2N6510 BUX17 BUX17A BUX18 BUX18A
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A P y = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .