SURGICAL SPIRIT Search Results

KSC5305D

Abstract: US Global Sat
Contextual Info: KSC5305D NPN Silicon Transistor Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product

Contextual Info: KSC5305D NPN Silicon Transistor Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product

lc08a

Abstract: KSC5305D
Contextual Info: PRELIMINARY KSC5305D NPN SILICON TRANSISTOR TO*220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread

KSC5302DM

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

KSC5302D

Contextual Info: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time

KSC5305D

Contextual Info: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

KSC5302D

Contextual Info: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time

Contextual Info: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Internal schematic diagram C 2 • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

KSC5302DM

Abstract: surgical spirit KSC5302D
Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

KSC5302DI

Contextual Info: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Internal schematic diagram C 2 • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

KSC5302DM

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

KSC5302DI

Abstract: IC-012
Contextual Info: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Equivalent Circuit C • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

KSC5302DI

Contextual Info: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Equivalent Circuit C • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

KSC5305D

Contextual Info: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

KSC5302DITU

Contextual Info: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Equivalent Circuit C • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

Contextual Info: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

KSC5302D

Contextual Info: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time

QS 100 NPN Transistor

Abstract: KSC5305DF
Contextual Info: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

c5305d

Abstract: npn 300V 2A transistor DSA0023737
Contextual Info: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

Contextual Info: KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

Contextual Info: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

K-Line

Abstract: K-line interface kline
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

EZ80 tube

Abstract: TUBE EZ80 ZHX1223 0408 G Diode chip base lead plastic QFN tray ZHX1403 ZHX1203 ZHX1423 ZHX1810
Contextual Info: Packaging Product Specification PS007226-0408 Copyright 2008 by Zilog, Inc. All rights reserved. www.zilog.com Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY ZILOG'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF