SURFACE MOUNT DIODE JS 8 Search Results

Contextual Info: March 1998 F A IR C H IL D S E M IC O N D U C T O R tm FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: SDC15 ^ “ X L .L E V n October 13, 1998 300W Surface Mount TVS Diode TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SDC15 transient voltage suppressors TVS is designed to protect components which are connected to data and transmission lines from voltage surges

Contextual Info: Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION

diode s4

Abstract: smd diode S4 S4 DIODE smd diode j smd diode JS DIODE S4 65 DIODE S4 92 S4 SMD DIODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits.

DIODE S4 08

Abstract: smd diode 891 BA891 DIODE S4 65 smd diode S4 S4 DIODE ultra low forward voltage diode diode s4 smd diode nh smd diode JS
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners

KDS 2F

Abstract: smd fl014 KDS DATE CODE SMD rectifier 729
Contextual Info: International e Rectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET® Power MOSFET Surface M ount A dvanced Process Technology Ultra Low O n-R esistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated V DSS = 55V ^DS on - 0.045Q lD = 3.7A Description

Contextual Info: P D -9 1 8 4 8 B International IQR Rectifier IRLMS6802 HEXFET Power M O SFET • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Available in Tape & Reel 1 f, 2 _5 V DSS = -20V °[T 3 4 ZD° ID * ^ D S o n = 0 .0 5 0 0 T o p V ie w

Contextual Info: May 1998 F A IR C H IL D iM IC D N D U C T O R ! FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

TE 2383

Contextual Info: Preliminary Data Sheet PD -2.383 rev. A 05/97 International IO R Rectifier H F A 0 8 T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche

BKC Semiconductors

Contextual Info: SM D Schottky Diode SOD-123 Plastic Applications Higher Voltage and lower Leakage. Low forward drop. More ESD protection. Efficient portable systems battery isolator. Able to directly replace SMA, SQD-80 or MELF packages on boards without redesign. SOD 123 PACKAGE OUTLINE

S4BV

Abstract: irl3103s
Contextual Info: PD -9.1338D International IOR Rectifier IRL3103S PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated VDSS = 30V

Contextual Info: DIXYS Three Phase VU0160 ldAV Rectifier Bridges v RSM v RRM V V 800 1200 1400 1600 1800 800 1200 1400 1600 1800 =175 A VRRM = 8 0 0 -1800 V >11 Type r1 1 1 VUO160-08N07 V U 0 160-12N07 V U 0 160-14N07 V U 0 160-16N07 V U 0 160-18N07* Hh 1 •1 1 1 1 1 1 [.

9955

Abstract: 9955 a 9955 SO-8
Contextual Info: May 1998 F A IR C H IL D EMICDNDUCTORi NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

TDA 6172

Abstract: TDA 7321 TDA 1883
Contextual Info: I , .• I International I R Rectifier PRELIMINARY P D 9 .1 3 8 6 IRF5305S HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • Surface Mount • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

Contextual Info: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching

Contextual Info: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

Contextual Info: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

70VDC

Abstract: Zowie Technology TS-103 TS103
Contextual Info: Zowie Technology Corporation Surface Mount Switching Diode 3 ANODE 1 CATHODE BAV70WG 3 1 2 2 ANODE SOT-323 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 4.5 Adc Symbol Max. Unit Total Power Dissipation, Ts=103 C

IRFZ44NS

Contextual Info: International ^Rectifier PD91315 IRFZ44NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

SURFACE MOUNT DIODE JS 8

Abstract: MBG381 BAs21 JS power electronic handbook
Contextual Info: BAS21 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE Package:SOT-23 Switch diode High Voltage Surface Mount Package Ideally Suited for Automatic Insertion ABSOLUTE MAXIMUM RATINGS at Ta=25℃

Contextual Info: OÌXYS Three-Phase VUC 36 Rectifier Bridges with Fast Diodes and "Softstart" Thyristor v RSM v BSM v RRM v DRM V V 1300 1500 1700 1200 1400 1600 "W i1t• VUC 36-12go2 VUC 36-14go2 VUC 36-16go2 ^TAVM T k = 85'C; module module T k = 85‘C; DC Maximum Ratings

diode 7B4

Abstract: OM4212SM
Contextual Info: OM4212SM ISOLATED SURFACE MOUNT POWER SCHOTTKY CENTER-TAP RECTIFIER Hermetic Surface Mount Package 10 Amp, 45 Volt Schottky Center-Tap FEATURES Hermetic Surface Mount Package Very Low Forward Voltage Low Recovery Charge High Efficiency For Low Voltage Supplies

1N5711UR-1

Abstract: JANTX, JX, JAN JANTX, JX, JAN, Schottky 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810 CDLL5711 CDLL5712 CDLL6263
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com SCHOTTKY BARRIER DIODES – LEADLESS PACKAGE FOR SURFACE MOUNT – METALLURGICALLY BONDED – DOUBLE PLUG CONSTRUCTION

Contextual Info: International SRectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Vdss = 55 V ^D S o n - 0.045Q