SURFACE MOUNT DIODE JS 8 Search Results
SURFACE MOUNT DIODE JS 8 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
| BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
| BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
| BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN | |||
| BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
SURFACE MOUNT DIODE JS 8 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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6ae diodeContextual Info: RIGHT ANGLE SURFACE MOUNT INFRARED EMITTING DIODE 0ÆR1IGHT QTLP610CIR PACKAGE DIM ENSIO NS 0.126 3.2 '0.110 (2.8) 0.0 4 3 ( 1.1) 0.035 (0.9) FRONT •- 0.0 2 0 (0.50) 0.0 8 7 (2 .2) 0.071 (1.8) I r \ 0.039 (1.0) I t 0.087 (2.2) 0.071 (1.8) POLARITY NOTE: |
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QTLP610CIR 178mm) QTLP610CPD 6ae diode | |
DIODE 1N746a JX
Abstract: JS j 1N6677-1
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1N746 1N759A 1N746A-1 1N759A-1. 1N746AUR-1 1N759AUR-1. 1N821 1N829A 1N829. DIODE 1N746a JX JS j 1N6677-1 | |
DIODE JS
Abstract: JS103 73 JX DIODE JS71 JS109 1N3016BUR-1
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1N5283UR-1 1N5314UR-1 CDLL5283 CDLL5314. CDLL250 CDLL257. 1N5711UR-1. 1N5712UR-1. CDLL5546D. CDLL6309 DIODE JS JS103 73 JX DIODE JS71 JS109 1N3016BUR-1 | |
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Contextual Info: March 1998 F A IR C H IL D S E M IC O N D U C T O R tm FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell |
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FDS8947A | |
1RFZ48
Abstract: RFZ48 RG-910 AN-994 IRFZ48 IRFZ48S SMD-220 d72a
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IRFZ48 O-220 IRFZ48S 1RFZ48 RFZ48 RG-910 AN-994 SMD-220 d72a | |
DIODE marking L12Contextual Info: SL05 SEMTECH Low Capacitance 300 Watt Surface Mount TVS Diode TEL: 805-498-2111 D E SC R IP T IO N The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over voltages caused by electrostatic discharge ESD , |
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MA4PContextual Info: an A M P com pany High Power PIN Diodes MA4P HIPAX Series V3.00 Case Styles Features • • • • • • High Power Handling Low Loss, Low Distortion Voltage Ratings to 1000 Volts Passivated PIN Chip - Full Face Bonded Hermetically Sealed Low Inductance Axial Lead, and SMQ |
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MA4P4000F, MA4P4300F MA4P | |
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Contextual Info: SDC15 ^ “ X L .L E V n October 13, 1998 300W Surface Mount TVS Diode TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SDC15 transient voltage suppressors TVS is designed to protect components which are connected to data and transmission lines from voltage surges |
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SDC15 SDC15 OT-23 | |
JS SOT23-3
Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
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BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A JS SOT23-3 sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23 | |
SMD MARKING XLContextual Info: PD - 9.1380A International IOR Rectifier IRLL2705 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance V dss = 55V |
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IRLL2705 OT-223 C-603 C-604 SMD MARKING XL | |
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Contextual Info: Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION |
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OD523 SC-79 OD523) | |
diode s4
Abstract: smd diode S4 S4 DIODE smd diode j smd diode JS DIODE S4 65 DIODE S4 92 S4 SMD DIODE
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OD523 SC-79 OD523) diode s4 smd diode S4 S4 DIODE smd diode j smd diode JS DIODE S4 65 DIODE S4 92 S4 SMD DIODE | |
1rfr9024
Abstract: 1RFU9024 AN-994 IRFR9024 IRFU9024
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IRFR9024 IRFR9024) IRFU9024) IRFU9024 -10v-----_ 1rfr9024 1RFU9024 AN-994 | |
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Contextual Info: TVS PRO EK DEVICES Transient Voltage Suppressors SM14 - Series Bidirectional E n g in e e r e d s o lu t io n s f o r t h e t r a n s i e n t e n v ir o n m e n t APPLICATION • Multiple I/O Port Protection • Board Level Interface Connection • Designed for IEC 801-2 & -4 Threat Levels |
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RS232, RS422, RS423, RS485 TheSM14 SO-14 | |
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wzf70Contextual Info: VVZ70 VTO 70 Three Phase Rectifier Bridge VVZF70 VTOF 70 ldAV = 70 A VRRM = 800-1600 V P relim inary data Co- Co- V RSM VDSM V RRM V DRM V V 800 1200 1400 1600 D oEo - Type D o— E o - li -oB W ZF70 xxx xxx xxx xxx 800 1200 1400 1600 70-08io7 70-12io7 70-14io7 |
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VVZ70 VVZF70 70-08io7 70-12io7 70-14io7 70-16io7 F2-52 wzf70 | |
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Contextual Info: Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits. |
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BA891 OD523 SC-79 | |
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Contextual Info: SEMTECH Low Capacitance Surface Mount TVS for High Speed Data Interfaces LC03-6 TEL: 805-498-2111 PRELIMINARY DESCRIPTION FEATURES: The LC03-6 transient voltage suppressor is designed to protect components which are connected to ISDN interfaces and high speed data telecommunication lines |
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LC03-6 8/20ps) 5/50ns) 2/50ps) LC03-6 | |
1n914 surface mount diode
Abstract: 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking
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300mW00mW-500mW DODO-35 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 500mW 1n914 surface mount diode 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking | |
KDS 2F
Abstract: smd fl014 KDS DATE CODE SMD rectifier 729
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IRFL4105 OT-223 KDS 2F smd fl014 KDS DATE CODE SMD rectifier 729 | |
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Contextual Info: P D -9 1 8 4 8 B International IQR Rectifier IRLMS6802 HEXFET Power M O SFET • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Available in Tape & Reel 1 f, 2 _5 V DSS = -20V °[T 3 4 ZD° ID * ^ D S o n = 0 .0 5 0 0 T o p V ie w |
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IRLMS6802 G0333S7 | |
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Contextual Info: RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR 0ÆRLIGHT QTLP610CPD PACKAGE DIM ENSIO NS 0.126 3.2 ' 0 . 1 1 0 ( 2 .8 ) " 0.043(1.1) 0.035 (0.9) FRONT — 0.020(0.50) 0.087 (2.2) 0.071 (1.8) r 1 0.087 (2.2) 0.071 (1.8) 0.039(1.0) t TOP 1. Emitter 2. Collector |
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QTLP610CPD QTLP610CPD QTLP610CIR 178mm) | |
smda24c-5
Abstract: BS-232
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SMDA05C-5 SMDA24C-5 smda24c-5 BS-232 | |
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Contextual Info: □IXYS vRRU = 8OO-I 6OOV idAVM = 40 A Half Controlled VHFD37 Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes V RSM V RRM V DSM V DRM V V 900 1300 1500 1700 800 1200 1400 1600 3 -o + r Type •'S. VHFD VHFD VHFD VHFD 37-08io1 37-12io1 |
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VHFD37 37-08io1 37-12io1 37-14io1 37-16io1 | |
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Contextual Info: May 1998 F A IR C H IL D iM IC D N D U C T O R ! FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high |
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FDS8934A | |