SURFACE MOUNT DIODE JS 8 Search Results

6ae diode

Contextual Info: RIGHT ANGLE SURFACE MOUNT INFRARED EMITTING DIODE 0ÆR1IGHT QTLP610CIR PACKAGE DIM ENSIO NS 0.126 3.2 '0.110 (2.8) 0.0 4 3 ( 1.1) 0.035 (0.9) FRONT •- 0.0 2 0 (0.50) 0.0 8 7 (2 .2) 0.071 (1.8) I r \ 0.039 (1.0) I t 0.087 (2.2) 0.071 (1.8) POLARITY NOTE:

Contextual Info: March 1998 F A IR C H IL D S E M IC O N D U C T O R tm FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

1RFZ48

Abstract: RFZ48 RG-910 AN-994 IRFZ48 IRFZ48S SMD-220 d72a
Contextual Info: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q

DIODE marking L12

Contextual Info: SL05 SEMTECH Low Capacitance 300 Watt Surface Mount TVS Diode TEL: 805-498-2111 D E SC R IP T IO N The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over voltages caused by electrostatic discharge ESD ,

MA4P

Contextual Info: an A M P com pany High Power PIN Diodes MA4P HIPAX Series V3.00 Case Styles Features • • • • • • High Power Handling Low Loss, Low Distortion Voltage Ratings to 1000 Volts Passivated PIN Chip - Full Face Bonded Hermetically Sealed Low Inductance Axial Lead, and SMQ

Contextual Info: SDC15 ^ “ X L .L E V n October 13, 1998 300W Surface Mount TVS Diode TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SDC15 transient voltage suppressors TVS is designed to protect components which are connected to data and transmission lines from voltage surges

JS SOT23-3

Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A

SMD MARKING XL

Contextual Info: PD - 9.1380A International IOR Rectifier IRLL2705 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance V dss = 55V

Contextual Info: Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION

diode s4

Abstract: smd diode S4 S4 DIODE smd diode j smd diode JS DIODE S4 65 DIODE S4 92 S4 SMD DIODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits.

1rfr9024

Abstract: 1RFU9024 AN-994 IRFR9024 IRFU9024
Contextual Info: International jü i Rectifier PD-9.655A IRFR9024 IRFU9024 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9024 Straight Lead {(RFU9024) Available in Tape & Reel P-Channei Fast Switching ^D S S - “6 0 V ^DS(on) = 0 - 2 8 0

DIODE S4 08

Abstract: smd diode 891 BA891 DIODE S4 65 smd diode S4 S4 DIODE ultra low forward voltage diode diode s4 smd diode nh smd diode JS
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners

wzf70

Contextual Info: VVZ70 VTO 70 Three Phase Rectifier Bridge VVZF70 VTOF 70 ldAV = 70 A VRRM = 800-1600 V P relim inary data Co- Co- V RSM VDSM V RRM V DRM V V 800 1200 1400 1600 D oEo - Type D o— E o - li -oB W ZF70 xxx xxx xxx xxx 800 1200 1400 1600 70-08io7 70-12io7 70-14io7

Contextual Info: Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits.

1n914 surface mount diode

Abstract: 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking
Contextual Info: MCC Micro Commercial Components SWITCHING DIODES MCC Part Number Peak Reverse Voltage PRV V Maximum Reverse Current @ 25°C Reverse Recovery Time mA Junction Capacitance VR =4.0V, f=1MHz Cj Max. pF trr Max. nS Maximum Power Dissipation @ TA=25°C PD mW 1.00

KDS 2F

Abstract: smd fl014 KDS DATE CODE SMD rectifier 729
Contextual Info: International e Rectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET® Power MOSFET Surface M ount A dvanced Process Technology Ultra Low O n-R esistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated V DSS = 55V ^DS on - 0.045Q lD = 3.7A Description

Contextual Info: P D -9 1 8 4 8 B International IQR Rectifier IRLMS6802 HEXFET Power M O SFET • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Available in Tape & Reel 1 f, 2 _5 V DSS = -20V °[T 3 4 ZD° ID * ^ D S o n = 0 .0 5 0 0 T o p V ie w

Contextual Info: RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR 0ÆRLIGHT QTLP610CPD PACKAGE DIM ENSIO NS 0.126 3.2 ' 0 . 1 1 0 ( 2 .8 ) " 0.043(1.1) 0.035 (0.9) FRONT — 0.020(0.50) 0.087 (2.2) 0.071 (1.8) r 1 0.087 (2.2) 0.071 (1.8) 0.039(1.0) t TOP 1. Emitter 2. Collector

smda24c-5

Abstract: BS-232
Contextual Info: 5EM TECH SMDA05C-5 thru SMDA24C-5 300 Watt Surface Mount TVS Array TEL: 805-498-2111 DESCRIPTION The SMDAxx-5 series of transient voltage suppressors are designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge ESD ,

Contextual Info: □IXYS vRRU = 8OO-I 6OOV idAVM = 40 A Half Controlled VHFD37 Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes V RSM V RRM V DSM V DRM V V 900 1300 1500 1700 800 1200 1400 1600 3 -o + r Type •'S. VHFD VHFD VHFD VHFD 37-08io1 37-12io1

Contextual Info: May 1998 F A IR C H IL D iM IC D N D U C T O R ! FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

TE 2383

Contextual Info: Preliminary Data Sheet PD -2.383 rev. A 05/97 International IO R Rectifier H F A 0 8 T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche

1RF620

Abstract: 1RF620S 317H IRF620 RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015
Contextual Info: PD-9.317H International IiorIRectifier IRF620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Vdss=200V R DS{on - 0 - 8 0 ^ lD = 5.2A Description DATA SHEETS

Diode LT 53

Abstract: tv lg 20 tv lg 37
Contextual Info: □IXYS Half Controlled VHFD29 Single Phase Rectifier Bridge vn D„ = 800-1600 V RRM idAVM = 32 A Including Freewheeling Diode and Field Diodes v RSM VRRM V DSM V DRM Type V 900 1300 1500 1700 V 800 1200 1400 1600 VHFD VHFD VHFD VHFD 29-08ÌO1 29-12io1 29-14io1