SURFACE ID4 D Search Results

Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018-BD February 2007 - Rev 01-Feb-07 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

XP1071-BD-EV1

Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD March 2009 - Rev 06-Mar-09 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power

Contextual Info: 34.0-36.0 GHz GaAs MMIC Power Amplifier P1055-BD March 2009 - Rev 03-Mar-09 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

XP1072-BD

Abstract: XP1072-BD-000V ID232 DM6030HK 152.01 VD55
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 4W Power Amplifier 22.0 Small Signal Gain +35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XP1032-BD

Abstract: XP1032-BD-EV1 DM6030HK
Contextual Info: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD January 2010 - Rev 29-Jan-10 Features Chip Device Layout 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

XP1018-BD

Abstract: DM6030HK TS3332LD XP1018 XP1018-BD-000X XP1018-BD-EV1 XU1004
Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018-BD February 2007 - Rev 01-Feb-07 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

TDA8808

Abstract: TDA8808AT TDA8808T TDA8808T/C3
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players

PDF PIN PHOTO DIODE DESCRIPTION

Abstract: tda8808 TDA8808AT TDA8808T GCLF PHOTO diode
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players

P1018

Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018 September 2006 - Rev 01-Sep-06 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD February 2009 - Rev 02-Feb-09 Features 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

P1005-BD

Abstract: DM6030HK TS3332LD XB1005-BD XP1005 XP1005-BD XP1005-BD-000V XU1001-BD
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD October 2008 - Rev 05-Oct-08 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD January 2009 - Rev 23-Jan-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

38H4PBA0157

Abstract: R143 335E-08
Contextual Info: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Abstract: XP1072-BD
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XP1058

Abstract: BD 149 transistor bd 36 930 DM6030HK XP1058-BD
Contextual Info: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

AN0017

Abstract: dvb-RCS QFN-4x4 15-30GHz X3068 dvb-rcs ka CHX3068-QDG MO-220 RO4003 JEDEC Drawing MO-220 qfn
Contextual Info: CHX3068-QDG RoHS COMPLIANT 15-30GHz Frequency Multiplier GaAs Monolithic Microwave IC in SMD leadless package Description The CHX3068-QDG is a Ka-band frequency multiplier monolithic integrated circuit. Typical applications are for telecommunication such as

pHEMT transistor 30GHz

Abstract: 29MPA0373 84-1LMI
Contextual Info: 26.0-31.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 29MPA0373 Features Chip Device Layout tio n Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3

XP1024-BD

Abstract: XP1024-BD-000V XP1024-BD-EV1 29MPA0373 DM6030HK TS3332LD pHEMT transistor 30GHz
Contextual Info: 26.0-31.0 GHz GaAs MMIC Power Amplifier P1024-BD April 2007 - Rev 17-Apr-07 Features Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

phemt transistor 30Ghz

Abstract: ID214
Contextual Info: 26.0-31.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 29MPA0373 Features Chip Device Layout tio n Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3

M65831P

Abstract: pt2396 DIGITAL ECHO IC M65831p DIGITAL ECHO IC M65831 M65831 Echo Processor IC M65831 PT2396-S Echo Processor IC delay Echo Processor IC PT2396 DIAGRAM
Contextual Info: Tel: 886-2-66296288 Fax: 886-2-29174598 URL: http://www.princeton.com.tw Digital Echo/Surround Processor IC PT2396 DESCRIPTION PT2396 is a digital echo/surround processor IC utilizing CMOS Technology. Analog Signal inputted to PT2396 is converted to digital signal by A-D converter and then stored into the internal memory. After

38MPA0547

Contextual Info: 35.0-45.0 GHz GaAs MMIC Power Amplifier 38MPA0547 August 2005 - Rev 04-Aug-05 Features Chip Device Layout tio n Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

84-1LMI

Abstract: XP1018 XU1004
Contextual Info: 35.0-45.0 GHz GaAs MMIC Power Amplifier P1018 October 2005 - Rev 21-Oct-05 Features Chip Device Layout Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

AT1504

Abstract: AT1504R SSOP16 surface id4 d
Contextual Info: AT1504 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors