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    SUF1002 Search Results

    SUF1002 Functional Equivalents (5)

    The Functional Equivalents tab will give you options that are likely to match the same function of SUF1002, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    LT4936 Lite-On Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5.1A I(D), 30V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    NDS8936F011 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    SUF1002 Kodenshi Sensing Check for Price Power Field-Effect Transistor, 5.8A I(D), 30V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    CWDM305NDTR13 Central Semiconductor Corp Check for Price Power Field-Effect Transistor, 5.8A I(D), 30V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    NDS8936D84Z Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    SUF1002 Datasheets (1)

    AUK
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SUF1002
    		AUK Dual N-channel Trench MOSFET Original PDF 463.35KB 8

    SUF1002 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features  Low drain-source On-resistance: RDS on =24mΩ @VGS=10V, ID=2.9A  Low gate charge: Qg=79.5nC (Typ.)  High power and current handing capability  Lead free product is acquired


    Original     		SUF1002 13-MAR-13 KSD-T7F001-001 PDF

    Contextual Info: SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features  Low drain-source On-resistance: RDS on =24mΩ @VGS=10V, ID=2.9A  Low gate charge: Qg=79.5nC (Typ.)  High power and current handing capability  Lead free product is acquired


    Original     		SUF1002 29-OCT-13 KSD-T7F001-001 PDF

    SUF1002

    Contextual Info: SUF1002 Semiconductor Dual N-channel Trench MOSFET Lithium Ion Battery Application. Notebook PC , Motor drive Application. Features • • • • Low Low Low Low Crss : Crss=36pF Typ. gate charge : Qg=4.2nC(Typ.) RDS(on) :RDS(on)=24mΩ(Typ.) VGS(th) : VGS(th)=1.0~3.0V


    Original     		SUF1002 KSD-T7F001-000 SUF1002 PDF

    Contextual Info: Preliminary SUF1002 Semiconductor Dual N-channel Trench MOSFET Lithium Ion Battery Application. Notebook PC , Motor drive Application. Features • • • • Low Low Low Low Crss : Crss=36pF Typ. gate charge : Qg=4.2nC(Typ.) RDS(on) :RDS(on)=30mΩ(Max.)


    Original     		SUF1002 PDF

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
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    Original     		SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 PDF