SUBSCRIPT OUT OF RANGE Search Results
SUBSCRIPT OUT OF RANGE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SF-QXP85B402D-000 |
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Amphenol SF-QXP85B402D-000 QSFP28 100GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (MTP/MPO Connector) by Amphenol XGIGA [QXP85B402D] | |||
SF-XP85B102DX-000 |
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Amphenol SF-XP85B102DX-000 SFP28 25GBASE-SR Short-Range 850nm Multi-Mode Optical Transceiver Module (Duplex LC Connector) by Amphenol XGIGA [XP85B102DX] | |||
CS-USB3IN1WHT-000 |
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Amphenol CS-USB3IN1WHT-000 3-in-1 USB 2.0 Universal Apple/Android Charge & Sync Cable Adapter - USB Type A Male In - Apple Lightning (8-Pin) / Apple 30-Pin / USB Micro-B (Android) Male Out - White | |||
TCR15AGADJ |
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LDO Regulator, Adjustable Output, 0.6 to 3.6 V, 1500 mA, WCSP6F | Datasheet | ||
TCR3RM28A |
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LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C/DFN4F | Datasheet |
SUBSCRIPT OUT OF RANGE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HA7-5142
Abstract: AN544
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HA-5142/883 MIL-STD883 HA-5142/883 HA7-5142 AN544 | |
BLS2731-10Contextual Info: Philips Semiconductors Product specification Microwave Transistors General conditions. A characteristic may also be a set of related values, usually shown in graphical form. PRO ELECTRON TYPE NUMBERING FOR BLS-TYPES Basic type number Bo g ey This type designation code applies to discrete |
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Contextual Info: Conventions Used in Presenting Technical Data Polarity Conventions The voltage direction is given either: D By an arrow which points out from measuring to reference point, or D By a double subscript, whereby the first subscript is termed as the measuring point, the second subscript as |
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germanium diode smd
Abstract: "tunnel diode" oscillator SMD Transistor Y12 "Step Recovery Diode" NF50 Z2E diode Technical Explanations power transistor tunnel diode diode varactor B11 g21 SMD Transistor
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SMD Transistor Y12
Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
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Contextual Info: HA-5142/883 Semiconductor Dual, Ultra Low Power Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HA-5142/883 dual, ultra-low power operational amplifier |
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HA-5142/883 HA-5142/883 20kV/V) 20nV/VHz) 24kHz 483nm 05A/cm2 | |
smd transistor A11b
Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
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UJT APPLICATION
Abstract: SMD Transistor Y12 "tunnel diode" oscillator SMD transistor y11 Y22 transistor smd SMD Transistor g22 y22c NF50 y-parameter Technical Explanations power transistor
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Photocoupler Q 817
Abstract: 727 thyristor PHILIPS WIDEBAND HYBRID IC MODULES transistor 33725 DIODE S4 74 vo 727 z-diode philips catv 860 amplifier ic SNW-EQ-611 tunnel diode GaAs philips OPTICAL PICK-UP
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Contextual Info: ffj HA-5142/883 H A R R IS S E M I C O N D U C T O R Dual, Ultra Low Power Operational Amplifier Description The HA-5142/883 dual, ultra-low power operational amplifier provides AC and DC performance characteristics sim ilar to, or better than m ost general purpose am plifiers while only |
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HA-5142/883 HA-5142/883 483pm 05A/cm2 | |
transistor smd bc rn
Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
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Contextual Info: HA-5144/883 {£} HARRIS Quad, Ultra-Low Power Operational Amplifier January 1989 Features D escrip tio n • This Circuit Is Processed In Accordance to M il-S td 883 and Is Fully Conform ant Under th e Provisions of Paragraph 1.2.1. • Low Supply Current @ V $ = + 5 V . . + 2 5°C 320|jA (Max) |
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HA-5144/883 HA-5144/883 -550C, 1250C 200mV -200mV | |
SIEMENS thyristor
Abstract: transistor smd AFE smd transistor G9
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HA-5151Contextual Info: H A -5151/883 ffl h a r r is Single, Low Power Operational Amplifier F eatures D escrip tio n • T his C irc u it Is P roce ssed In A c c o rd a n c e to M ll-S td 883 an d is Fu lly C o n fo rm a n t U n d e r th e P ro visio n s o f P aragraph 1.2.1. The HA-5151/883 single operational am plifier is part of a |
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HA-5151/883 -550C 1250C 200mV -200mV HA-5151 | |
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HA2-5142/883
Abstract: AN544
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HA-5142/883 MIL-STD883 HA-5142/883 HA2-5142/883 AN544 | |
AN544Contextual Info: HA-5142/883 S E M I C O N D U C T O R Dual, Ultra Low Power Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5142/883 dual, ultra-low power operational amplifier |
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HA-5142/883 MIL-STD883 HA-5142/883 05A/cm2 AN544 | |
Contextual Info: 33 HARRIS HA-5142/883 S E M I C O N D U C T O R Features Description • This Circuit Is Processed In Accordance to MIL-STD8S3 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5142/883 dual, ultra-low power operational amplifier provides AC and DC performance characteristics similar to, |
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HA-5142/883 HA-5142/883 20kV/V) 20nV/VHz) 24kHz 05A/cm2 | |
Contextual Info: HA-5141/883 g HARRIS Single, Ultra-Low Power Operational Amplifier January 1989 F eatures D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td - The H A-5141/883 single, ultra-low power operational am plifier provide AC and DC performance characteristics |
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HA-5141/883 -550C -550C, 200mV -200mV | |
Contextual Info: HARRIS SENICOND SECTOR 10E D I M303271 □D133S3 R I H A -5144/883 HARRIS Quad, Ultra-Low Power Operational Amplifier T-7 9 -0 8 January 1989 Features Description • This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of |
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M303271 D133S3 Mll-Std883 20kV/V 75kV/V -550C 1250C 200mV -200mV | |
MPC555Contextual Info: SECTION 21 DEVELOPMENT SUPPORT 21.1 Overview The visibility and controllability requirements of emulators and bus analyzers are in opposition to the trend of modern microcomputers and microprocessors where many bus cycles are directed to internal resources and are not visible externally. |
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32-bit MPC555 MPC555 | |
Contextual Info: Vishay Semiconductors General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: |
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Contextual Info: S HA-5152/883 h a r r is Dual, Low Power Operational Amplifier January 1989 Features D escrip tio n • This Circuit is Processed in Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions oF Paragraph 1.2.1. The HA-5152 /883 dual operational am plifier is part of a |
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HA-5152/883 Mll-Std883 HA-5152 250nA -550C -550C, 200mV -200mV | |
oscillator tunnel diodeContextual Info: Vishay Semiconductors General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: |
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a 4514Contextual Info: ffl h a - 5142/883 h a r r is Dual, U ltra-Low Power O perational Amplifier January 1989 Features D escrip tio n • This Circuit Is Processed in Accordance to Mil-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Supply Current @ Vg = +5V . +25°C 160/aA (Max) |
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100Hz -550C -550C, -200mV 200mV a 4514 |