SUB60 Search Results

SUB60N06

Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

sup60n06-18

Abstract: SUB60N06-18
Contextual Info: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB60N06-14

Abstract: p60n
Contextual Info: Tem ic SUP/SUB60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) Id r DS(on) (S2) 60 0.014 (A) 603 D T 0-220A B O o T O -263 o D R A IN con n ected to TA B G D S Top View G D S SU B60N 06-14

Contextual Info: SUP/SUB60N06-18 VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET Product Summary V(BR)DSS (V ) r DS(on) (£2) I d (A ) 60 0.018 60 TO-220AB D Q “ cT pO'N ’ ss& TO-263 G D S Top View 6 Top View s SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

sub60n06

Abstract: sup60n06-18 SUB60N06-18
Contextual Info: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUP60P06-20

Abstract: SUP60P06
Contextual Info: T e m ic SUP/SUB60P06-20 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DSion) (£2) I d (A) 0.020 -60a -60 TO-220AB o T O -263 o DRAIN connected to TAB 1^1 G D S Top View G D S SUB60P06-20

bma 023

Abstract: SUB60N06-14 SUP60N06-14
Contextual Info: T e m ic SUP/SUB60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) ( ß ) 60 0.014 : I d (A) 60a T0-220AB o TO-263 o D R A IN con n ected to TAB n G D S Top View GD Ò S S SU B60N06-14

SUB60N06-18

Abstract: 2364 diode SUB60N06 transistor 2364
Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB60N04-15LT

Contextual Info: SPICE Device Model SUB60N04-15LT Vishay Siliconix N-Channel 40-V D-S Temperature Sensing MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUP/SUB60N06-18 Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

38-333

Contextual Info: T em ic SUP/SUB60N06-18 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary RfDSi <V > • taK n O ) 60 0.018 60 TO-220AJB o T O -2 6 3 ■«Jh D R A I N c o n n e c te d to T AB CDS Top V iew G D S S U B 6 0 N 0 6 -1 8

LMV321

Abstract: LMV331 SUB60N04-15LT
Contextual Info: SUB60N04-15LT New Product Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 60a 0.015 @ VGS = 4.5 V 60 Notes: a. Package limited. FEATURES D D D D Temperature-Sense Diodes for Thermal Shutdown

SUP60N06-18

Abstract: SUB60N06-18 SUB60N06
Contextual Info: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SUB60N06-08

Contextual Info: T e m ic SUB60N06-08 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (ß ) I d (A) 0.008 603 60 D p TO-263 ( 1 o jj u y DRAIN connected to TAB G D S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

SUB60N06

Abstract: SUP60N06 B0905
Contextual Info: SUP/SUB60N06Ć18 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB60N06Ć18 Top View NĆChannel MOSFET

TR1111

Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

sup60n06-18

Abstract: SUB60N06-18
Contextual Info: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUB60N04-15LT New Product Vishay Siliconix N-Channel 40-V D-S MOSFET With Sensing Diodes PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.012 @ VGS = 10 V "60a 0.015 @ VGS = 4.5 V "60 40 Notes: a. Package limited. FEATURES D D D D D D D D Temperature-Sense Diodes for Thermal Shutdown

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

AD8220

Abstract: AD7685 AD8615 AD8618 ADR435 MO-187-AA OP1177 OP2177 branding h01
Contextual Info: JFET Input Instrumentation Amplifier with Rail-to-Rail Output in MSOP Package AD8220 FEATURES Medical instrumentation Precision data acquisition Transducer interface GENERAL DESCRIPTION The AD8220 is the first single-supply JFET input instrumentation amplifier available in an MSOP package.

pulse load resistors wattage calculation

Abstract: zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 MIC2584 MIC2585 Si7892DP
Contextual Info: MIC2584/2585 Micrel MIC2584/MIC2585 Dual-Channel Hot Swap Controller/Sequencer General Description Features The MIC2584 and MIC2585 are dual-channel positive voltage hot swap controllers designed to facilitate the safe insertion of boards into live system backplanes. The MIC2584

vfd schematics

Abstract: vfd circuit diagram vfd schematic diagram vfd CONTROL circuit diagram vfd -driver SUC75N04-04T LMV321M5 AN820 CRCW08052003F CRCW08052202F
Contextual Info: AN820 Vishay Siliconix Temperature Sensing Power MOSFET Kandarp Pandya INTRODUCTION Vishay Siliconix temperature-sensing power MOSFETs promote reliability in end products by giving an additional means of protection to power circuitry from current overloads

MOSFET driver 175C

Abstract: SUM60N04-12LT LMV321 LMV331 SUB60N04-15LT A2005V zero bias diode SOT-23 6 vsc
Contextual Info: SUM60N04-12LT New Product Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES D D D D D D D D D APPLICATIONS Temperature-Sense Diodes for Thermal Shutdown TrenchFETr Power MOSFET 175_C Maximum Junction Temperature ESD Protected: 2000 V

SUB60N04-15LT

Abstract: LMV321 LMV331 SUM60N04-12LT A2005V
Contextual Info: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic