HSU6117
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -60 A continuous drain current, 14 mΩ RDS(ON) at VGS = -10V, featuring low gate charge, high cell density trench technology, and 100% EAS guaranteed for synchronous buck converter applications. |
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HSU6115
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -35A continuous drain current, 25mΩ RDS(ON) at VGS=-10V, low gate charge, and 100% avalanche rated, suitable for synchronous buck converters. |
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HSU6113
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -13A continuous drain current, 90mΩ RDS(ON) at VGS=-10V, featuring low gate charge, high cell density trench technology, and 100% EAS tested for synchronous buck converter applications. |
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HSU6107
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -8A continuous drain current, 180mΩ RDS(ON) at VGS=-10V, low gate charge, and advanced trench technology for synchronous buck converters. |
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HSU6103
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -18A continuous drain current, 70mΩ RDS(ON) at VGS=-10V, designed for synchronous buck converters using high cell density trench technology. |
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HSU6105
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -29A continuous drain current, 35mΩ RDS(ON), low gate charge, and 100% EAS tested, suitable for synchronous buck converters. |
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HSU6117
