HSU0048
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 73A continuous drain current, 6.6mΩ typical RDS(ON) at VGS=10V, low gate charge, and 100% EAS guaranteed for synchronous rectification in AC/DC quick chargers. |
Original |
PDF
|
|
|
HSU0020A
|
|
Huashuo Semiconductor
|
HSU0020A is a high cell density trenched N-channel MOSFET with 100 V drain-source voltage, 56 A continuous drain current, 13 mΩ typical RDS(ON), and low gate charge, suitable for synchronous buck converter applications. |
Original |
PDF
|
|
|
HSU0014
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 152 mΩ RDS(ON), 9A continuous drain current, low gate charge, and advanced trench technology for synchronous buck converter applications. |
Original |
PDF
|
|
|
HSU0004
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 12A continuous drain current, 112mΩ RDS(ON), low gate charge, and advanced trench technology for high-density power applications. |
Original |
PDF
|
|
|
HSU0056
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 40A continuous drain current, 15.5mΩ typical RDS(ON) at VGS=10V, low gate charge, and 52W power dissipation in TO-252 package. |
Original |
PDF
|
|
|
HSU0026
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 40A continuous drain current, 16mΩ typical RDS(ON), low gate charge, and advanced trench technology for synchronous buck converters. |
Original |
PDF
|
|
|
HSU0018A
|
|
Huashuo Semiconductor
|
N-channel trench MOSFET with 100 V drain-source voltage, 45 A continuous drain current, 22 mΩ typical RDS(ON), and low gate charge, suitable for synchronous buck converters. |
Original |
PDF
|
|
|
HSU0016
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 47 mΩ RDS(ON) at 10V VGS, 22A continuous drain current, and low gate charge, suitable for synchronous buck converters. |
Original |
PDF
|
|
|
HSU0034
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 14.6A continuous drain current, 100 mΩ RDS(ON) at VGS=10V, low gate charge, and 30W power dissipation in TO252 package. |
Original |
PDF
|
|
|
HSU0028
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 66 mΩ RDS(ON), 15 A continuous drain current, low gate charge, and advanced trench technology for high-density power applications. |
Original |
PDF
|
|
|