SU FUJITSU Search Results

MB8464-15

Abstract: MB8464-12L mb8464 mb8464-12 12-M5 MB846412L
Contextual Info: FU JIT SU MICROELECTRONICS INC. CMOS 65,536-BIT STATIC RANDOM ACCESS MEMORY MB8464 MB8464-L i I' PRELIMINARY DESCRIPTION The Fujitsu MB8464 is a 8192 word by 8-bit static random access memory. This device is fabricated using a combination of Fujit­ su’s high-speed N-Channel MOS siiicongate technology and the low power con­

CSP07

Contextual Info: FUJITSU MICROELECTRONICS 31E D BTHITbS ODISfiS? G •V'PII FU JIT SU March 1989 Edition 1.0 15W DUAL BTL AUDIO POWER AMPLIFIER The Fujitsu MB3742 i; designed for a low-frequency high-power amplifier with Internal BTL Balanced Transformer Less circuitry. The MB3742 is packed in

MB8116

Abstract: MB8116E MB8116H MK4116
Contextual Info: MB8116E MB8116H FU JIT SU MICROELECTRONICS MOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB8116 is a fully decoded dynamic NMOS random access memory organized as 16,384 one-bit words. The design is optimized fo r high speed, high performance applications such

LT 542 seven segment display

Abstract: asm96 f57a
Contextual Info: FUJITSU S E M IC O N D U C TO R CONTROLLER MANUAL C M 25-00201-2E F2MC-8L FAMILY 8-BIT MICROCONTROLLER ASSEMBLER MANUAL Fu jit su PREFACE • Objectives and intended readership This manual explains the assembly language specifications for program development using

MBM2716

Abstract: MBM2716 f MBM2716H MBM2716-X fujitsu 2716
Contextual Info: F U JIT SU MBM2716 MICROELECTRONICS MBM2716H UV ERASABLE 16,384-BIT MBM2716-X BEAD ONLY MEMORY_ _ d e s c r ip t io n The Fujitsu MBM2716 is a high speed 16,384-bit static N-channel MOS erasable and electrically reprogrammable read only mem­

2SA1080

Abstract: 2SC2530
Contextual Info: FUJITSU SUÇON HKH S PED POWER TRANSISTORS ^ September 1979 SILICON PNP RING EMITTER TRANSISTOR RET The 2SA 1080 is a silicon PNP M.C.-Head a m p lifie r use transistor fabricated w ith F ujitsu's unique Ring E m itte r Transistor (RET) technology. RET devices are

Contextual Info: FUJITSU MICROELECTRONICS T73> .D 374T7bS 0005121 T • T-75-37-05 F U JIT SU April 1987 Edition 1.0 SERIAL INTERFACE ADAPTER FOR DSP SIA The Fujitsu MB 87069 Is a dedloated Serial Interface Adapter (SIA) that provides cost-effeotlve Interface support between the Fujitsu MB 8764

Contextual Info: : FUJITSU SEMICONDUCTOR DATA SHEET su ASSP POWER MANAGEMENT SWITCH MB3802 • DESCRIPTION The MB3802 is a power management switch incorporating two switch circuits with extremely low ON resistance. NO diode is required because the switch block is configured with an N-ch MOS to prevent reverse current at

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

MB88562

Abstract: vfd single phase inverter mb8850 MB88561-PF transistor chn 115
Contextual Info: F U JIT SU 4-BIT MICROCOMPUTERS for DIGITAL TUNING SYSTEMS CMOS MB88560 SERIES April 1987 Edition 2.0 DESCRIPTION The Fujitsu MBS8560 series is an upgraded version of the MB88500 family and consists of two 4—bit microcom puters—the MB88561 with an LCD display controller/driver and the MB88562

fujitsu polymer

Abstract: fujitsu fpcap fujitsu polymer capacitors FUJITSU 820uf fpcap FP-4R0RE561M FP-2R5RE821M FUJITSU FP Series 560Uf 2.5v FUJITSU 560Uf
Contextual Info: FPCAP FPCAP Functional Polymer Capacitors Solid Electrolytic Capacitors with Functional Polymer RE Series 0U, SU ˜Features Ultra Low ESR Type Lead Free By using Functional Polymer cathode, Frequency & Temp. characteristics are greatly improved. • Low ESR at a high frequency range.

MBM10470

Abstract: MBm10470a-10
Contextual Info: Preliminary FU JIT SU Bipolar Memories • MBM10470A-10 ECL 4096-Bit Bipolar Random Access Memory Description The Fujitsu MBM10470A-10 is fu lly decoded 4096-bit ECL read/write random access m emory designed fo r high-speed scratch pad, con­ trol and buffe r storage applications. This device is organized as

ddr3 MTBF

Abstract: SENSE23 4sp560m t
Contextual Info: VCN60/70 Series www.murata-ps.com High Efficiency, High Current Density, 60 or 70 Amp Single Inline Package DC/DC Converters DESCRIPTION ESCRIPTIO ON Designed signed to su support upport DDR1 DDR1, 1, DDR2 and DDR3 SDRA SDRAM AM memoryy power requ requirements,

MB8417-20L

Abstract: F4531 4623 TDVS-H
Contextual Info: FUJITSU MICROELECTRONICS 7 Ö DeJ 37^71^2 000331b 3 FU JIT SU M ICRO ELECTRO N ICS. INC. CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY T-46-23 MB8417-20 MB8417-20L DESCRIPTION The Fujitsu MB8417 Is a 2048 word by 8-bit static random ac­ c e ss memory fabricated with high

capacitor ja8

Abstract: MBM2732-35 MBM2732 MBM2732A intel 2732 MBM2732-45 intel 2732 eprom
Contextual Info: MBM2732-35 MBM2732-45 F U JIT SU M IC R O E L E C T R O N IC S UV ERASABLE 32,768-BIT READ ONLY MEMORY DESCRIPTION The Fujitsu MBM2732 is a high speed 32,768-bit static N-channel M OS erasable and electrically reprogrammable read only mem­ ory EPROM . It is especially well

MBM2732A-30

Abstract: MBM2732A-35 MBM2732A-25 MBM2732A-20 MBM2732A MBM2732A30 MBM2732A-35X MBM2732A-X 2732A eprom MBM2732
Contextual Info: MBM2732A MBM2732A-X FU JIT SU M IC R O E L E C T R O N IC S UV ERASABLE 32,768-BIT READ ONLY MEMORY DESCRIPTION The Fujitsu M BM 2732A is a high speed 32,768-bit static N-channel M O S erasable and electrically re­ programmable read only memory {EPROM . It is especially well

Contextual Info: FU JIT SU MI CR OELE C T R ON I C S 3 7 4 c]7b2 QQ GSOTÜ 2 T7D D T—49—12—09 DIGITAL SIGNAL PROCESSOR The Fujitsu MB 87064 Is a general-purpose LSI silicon gate Digital Signal Processor DSP . The device Is fabricated In low-power CMOS and features a

MBM27128-20

Abstract: FUJITSU MBM27128 fujitsu uv erasable eprom 27128 MBM27128 MBM27128-25 MBM27128-30 INTEL 27128 Fujitsu Devices
Contextual Info: FU JIT SU MOS M em ories M B M 2712 8 -2 0 , M B M 2712 8 -2 5 , M B M 2712 8 -3 0 UV Erasable 131,072-Bit Read Only Memory D escription The Fujitsu MBM27128 is a high speed 131,072-bit s ta tic N-channel MOS erasable and e lectrically reprogrammable read only

MBM2149-55L

Abstract: MBM2149-70L 48CK MBM2149 MBM2149-45
Contextual Info: F U JIT SU m ic ro e le c tro n ic s MOS 4096-BIT STATIC RANDOM ACCESS MEMORY MBM2149-45 MBM2149-55L MBM2149-70L DESCRIPTION The Fujitsu MBM2149 is a 1024 word by 4-bit static random ac­ cess memory fabricated using N-channel silicon gate MOS tech­ nology. The memory is fully static

MBL8282

Abstract: MBL6282 8282 octal latch
Contextual Info: FUJITSU MICROELECTRONICS f? DE j 37M17fc.a 00043^1 Q J " D t - * / 6 - 01 - c>5 F U JIT SU Advanced Products • M BL 8282 M BL 8283 K Bipolar Octal Latch D e scrip tio n The MBL8282 and MBL8283 are 8 -bit bipolar latches with 3state output buffers. They can be used to Implement latches,

CL1226

Abstract: Fujitsu SPARC
Contextual Info: F U JIT SU SPARC Memory Management Unit MB86920 FEATURES: • Compatible with the SPARC Reference MMU • Page level protections • 32-bit virtual address, 36-bit physical address • Selective flu shing and probing • Fixed 4K-byte page size • Hardware miss-processing

88516b

Abstract: mb88515b MB88511 MB88411 88202-P BB413 MB88201 256X4 MB88515B-P-SH MB88541-PF
Contextual Info: FUJITSU MIC ROE LE CT RON IC S ^71 D • 374^7^2 0004570 0 « Fi ll T-90-60 April 1988 Edition 3.0 4-Bit Microcontrollers and Peripherals Table 1: FU JIT SU 4-BIT MCU F A M IL Y Process/ Series NMOS MB 8840 Series CMOS MB 8850/H MB 8850B Series CMOS MB 88200/H

Contextual Info: FUJITSU MICROELECTRONICS 31E D May 1990 E2 3 7 4 ^ 2 0G13347 T B F M I Fu jit su P R O D U C T PRO FILE • MB85411-30/40 CMOS STATIC RAM MODULE 65536 Words X 9-Bit The Fujitsu MB85411 is a fully decoded, CMOS static random access memory module SRAM with nine MB81C71A devices mounted on a

2SB897

Abstract: 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973
Contextual Info: 73 - m % € Type No. Manuf. & .E SANYO 2S8 1459 in 2SB 1460 □— □— A 2SA1704 A 2SA1692 fé T 2SB 1464 fé T 2 SB 1467 = * / IH 2SB 1462 2SB 1468 2SB 1471 NEC B HITACHI ±L ± a FUJITSU fô T MATSUSHITA m M IT SU B ISH I □ — A ROHM 2SB1452 2SA1774