STT 433 Search Results

10K J

Abstract: 082B HJM072 NJM072B tl o82 tl 072
Contextual Info: NJM072B/082B, 072/082 2 B K A y J - F E T A * * - ^ > is t NJMQ72B/082B, «JM072/0821Ì , ^ 7 > 7 'T 'Ä ^ ^ - U - K » ftT U S * S À i i 'i v f - y v x , W ftt L, Ì C Z - f X, S ^ C I W L T Stt. 16A * * 7 -fe -y i > f $ S I ] < 7 i E J l £ « <b -P T l ' * T o

Contextual Info: REV. Status ISSUE 1 8 /8 /9 5 TS A. Electrical specifications @ 25 ° C 1. Leakage Inductance; 30 /iH MAX 2. DC Resistance; Primary (1 -2 ) 2.5 Q MAX Secondary (3 -4 ) 1.5 0 MAX Tertiary (5 -6 ) 1.5 0 MAX 3. Primary ET-constant; 9 0 V - ^ s MIN 4. Turns Ratio;

trigger transformer

Abstract: STT-112 A1122-1 800PF
Contextual Info: REV. S ta tu s REVISION 8 /2 7 /9 9 TS Encapsulated Trigger Transformer C£ A. Electrical specifications @ 25° C Ld 1. Leakage Inductance; 200//H MAX 2. DC Resistance; Primary (1 - 2 ) 7.0Q MAX Secondary (3 - 4 ) 3.50 MAX Tertiary (5 - 6 ) 3.50 MAX 3. Prim ary ET—constant;

STT-104

Abstract: trigger transformer
Contextual Info: REV. S ta tu s A. Electrical specifications @ 25 ° C ISSUE 1 8 /8 /9 5 TS o 1. Leakage Inductance; 25 /iH MAX 2. DC Resistance; Primary ( 1 - 2 ) 2.5 Q MAX Secondary ( 3 - 4 ) 2.5 0 MAX Tertiary ( 5 - 6 ) 2.5 Q MAX 3. Primary ET-constant; 9 0 V - ^ s MIN

STT-102

Abstract: P-A1-10698
Contextual Info: REV. S ta tu s ISSUE 1 6/3/92 TS ISSUE 2 8/20 /92 TS ISSUE 3 TEMECULA WAS CARSON 6/15/95 TS ISSUE 4 ADDED NOTE 7 REV DIMS 6/27/95 TS A. Electrical specifications @ 25 ° C OL Ld CD 1. Leakage Inductance; 50 /i H MAX 2. DC Resistance; Primary ( 1 - 2 ) 5.0 Q MAX

STT-105

Contextual Info: REV. Status ISSUE 1 6 / 2 2 / 9 2 TS ISSUE 2 TEMECULA WAS CARSON ADDED NOTE 7 & DATE CODE 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C ID O 1. Leakage Inductance; 100 ^H MAX 2. DC Resistance; Primary (1 -2 ) 5.0 Q MAX Secondary (3 -4 ) 5.0 0 MAX

Marking Code 3E

Abstract: STT-108
Contextual Info: REV. Status IS S U E 1 6 / 3 / 9 2 TS A. Electrical specifications @ 25 ° C 00 o 1. Leakage Inductance; 6 0 / ¿H MAX IS S U E 2 8 / 2 0 / 9 2 TS IS S U E 3 TEM ECULA W AS C A R SO N A D D E D NO TE 7 <3e DATE C O D E 8 / 7 / 9 5 TS T 2. DC Resistance;

STT-103

Contextual Info: REV. S ta tu s IS S U E 1 6 / 3 / 9 2 TS IS S U E 2 8 / 2 0 / 9 2 TS IS S U E 3 TEM ECULA W AS C A R SO N A D D E D NO TE 7 <3e DATE C O D E 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C K) O 1. Leakage Inductance; 100 ^H MAX 2. DC Resistance; Primary (1 -2 ) 7.0 Q MAX

STT-107

Abstract: trigger transformer
Contextual Info: REV. Status IS S U E 1 7 / 8 / 9 2 TS IS S U E 2 TEM ECULA W AS C A R SO N A D D E D NO TE 7 & DATE C O D E 8 / 8 / 9 5 TS A. Electrical specifications @ 25 ° C 1. Leakage Inductance; 2 0 /¿H MAX 2. DC Resistance; Primary (1 -2 ) 2.5 Q MAX Secondary (3—4) 1.5 0 MAX

STT-109

Abstract: 10717
Contextual Info: REV. Status A. Electrical specifications @ 25 ° C IS S U E 1 7 / 8 / 9 2 TS <J) o 1. Leakage Inductance; 130 ^ H MAX 2. DC R esistance; Prim ary ( 1 - 2 ) 7.0 Q MAX Se cond ary (3 — 4) 3.5 0 MAX 3. Prim ary ET— constant; 2 8 0 V - f i s MIN 4. Turns Ratio;

CSA-C22

Abstract: HYBRID TRANSFORMER
Contextual Info: REV. S t a t u s REVISION 0 8 / 1 6 / 9 9 TS REVISION A CHANGED MECHANICAL SPECIFICATION 02/27/01 YS SURFACE MOUNT HYBRID TRANSFORMER A. Electrical specifications @ 25'C 1. Pri source impedance; 6000CT 2. Sec load impedance; 600QCT 3. MAX output power; —4 5 ~ + 7 d B m

STT 433

Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium

philips ferrite material specifications 12nc

Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency

U19193E

Abstract: cmps a42 transistor U17792E ptc100 R01UH0119EJ0300 F0103H nec f0123h SLC-101 transistor P40 NF 10L SLC101
Contextual Info: User’s Manual 16 PD78F8040, 78F8041, 78F8042, 78F8043 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

TMC0281

Abstract: NMI120 Tmc028 CLD271 es051 OVF20 PM581 y455 cms P32 sot 23 IMS05
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: Preliminary User’s Manual 78K0R/KF3-L 16-bit Single-Chip Microcontrollers PD78F1010 μPD78F1011 μPD78F1012 Document No. U19459EJ1V0UD00 1st edition Date Published December 2008 NS 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U19459EJ1V0UD

Contextual Info: Preliminary User’s Manual 78K0R/KG3-L 16-bit Single-Chip Microcontrollers PD78F1013 μPD78F1014 Document No. U19460EJ1V0UD00 1st edition Date Published November 2008 NS 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U19460EJ1V0UD NOTES FOR CMOS DEVICES

Contextual Info: Preliminary User’s Manual 78K0R/Kx3-L 16-bit Single-Chip Microcontrollers PD78F1000 μPD78F1001 μPD78F1002 μPD78F1003 μPD78F1004 μPD78F1005 μPD78F1006 μPD78F1007 μPD78F1008 μPD78F1009 Document No. U19291EJ1V0UD00 1st edition Date Published July 2008 NS

70F3017A

Abstract: PU106 V850 U15673E uPD703014B uPD703014BY uPD703015B uPD703015BY WT470 v850 architecture CR10
Contextual Info: User’s Manual TM V850/SA1 32-Bit Single-chip Microcontroller Hardware µPD703014A µPD703014AY µPD703014B µPD703014BY µPD703015A µPD703015AY µPD703015B µPD703015BY µPD703017A µPD703017AY µPD70F3015B µPD70F3015BY µPD70F3017A µPD70F3017AY Document No. U12768EJ4V0UD00 4th edition

pu110 45 2c

Abstract: pu110 V850 U15673E UPD70F3017AGC-8EU-A 70F3017A EGP00 st stt 128 uPD703014B uPD703014BY uPD703015B
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

gp 542

Abstract: 70F3015BGC-8EU-A UPD70F3015BF1-EA6-A
Contextual Info: User’s Manual V850/SA1 32-Bit Single-chip Microcontroller Hardware µPD703014A µPD703014AY µPD703014B µPD703014BY µPD703015A µPD703015AY µPD703015B µPD703015BY µPD703017A µPD703017AY µPD70F3015B µPD70F3015BY µPD70F3017A µPD70F3017AY Document No. U12768EJ4V1UD00 4th edition

K1135A

Abstract: K1135B K1135 K1135C 8210 microprocessor ultrasonic receiver MOTOROLA ultrasonic generator 1 Mhz 5A/K1135
Contextual Info: K1135Series re p re s e n te d k o ttm e ie r by ASS0 ^ ^ p E ' s u it e ?470 W N C H B « R b Lv d .,008 CAMPBELL, 408 866-5153 Dual Baud Rate Generator 16 Synchronous/Asynchronous Baud Rates from 50 to 19,200 1.035" X .530" AREA .200” SEATED HEIGHT + 5V, + 12V dc INPUTS

F0103H

Abstract: NEC F0114H U17792E nec f0123h nec f0134H TI07 M 151 0221 BUT22 stm stt 128 CC78K0R
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

uPD784927

Abstract: uPD784927Y uPD784928 uPD78F4928 uPD78F4928GF-3BA uPD78F4928Y circuit diagram for sony tv 4 kv bipolar PROM CL21 584 j sony ccdd 2.5
Contextual Info: Preliminary User’s Manual µPD784928, 784928Y Subseries 16-bit Single-chip Microcontrollers Hardware µPD784927 µPD78F4928 µPD784927Y µPD78F4928Y Document No. U12648EJ2V0UM00 2nd edition Date Published June 1998 N CP(K) Printed in Japan 1997 [MEMO]