STRUCTURE MEMS IC Search Results

Contextual Info: White Paper: RF MEMS Switch: What You Need to Know Structure and Usage of OMRON MEMS Switch 2SMES-01 MEMS RF Switch Type: 2SMES-01 White Paper: 2SMES-01 MEMS RF Switch 1 Outline In this application note, the basic operation principle and driving method for OMRON’s MEMS switch

SSH-003T-P0.2

Abstract: AGW28 "Flow Sensor" SM03B-SRSS-TB 03SR-3S JST 03SR-3S sm03b gas oil sensor MEMS MEMS flow sensor AWG32
Contextual Info: MEMS Flow Sensor D6F-03A3 Includes an MEMS Flow Element. High-accuracy Sensing Even for Shiny Bodies. • The industry's thinnest and lightest flow sensor See note. , with a MEMS flow chip. ■ Unique flow path structure provides high precision and fast response.

Contextual Info: D6F-W MEMS Flow Rate Sensor A Compact Sensor That Uses OMRON’s Unique Flow Path Structure for High-performance Flow Rate Measurement. • Anti-dust performance enhanced by OMRON’s unique three-dimensional flow path structure. • High accuracy of ±5% FS.

"Flow Sensor"

Abstract: d6F-P0010A1 03SR-3S D6F-P0001A mems pressure sensor structure D6F-P0010A2 particulate matter sensor XG8V-0344 mass air flow sensor
Contextual Info: MEMS Mass Flow Sensor D6F-P A Compact, High-performance Flow Sensor with Dust Segregation Structure. • Built in Dust Segregation System DSS with cyclone flow structure, diverts particulates from sensor element. • High resolution and repeatability, even at low flow rates.

S3B-ZR-SM2-TF

Abstract: SZH-002T SZH-002T-P SZH-002T-P0 D6F-W CABLE D6F-W04A1 S3B-ZR SZH-003T-P w01a AWG28
Contextual Info: MEMS Flow Rate Sensor D6F-W@A1 A Compact Sensor That Uses OMRON’s Unique Flow Path Structure for Highperformance Flow Rate Measurement. • Anti-dust performance enhanced by OMRON's unique three-dimensional flow path structure. ■ High accuracy of ±5% FS.

Contextual Info: MEMS Mass Flow Sensor D6F-P A Compact, High-performance Flow Sensor with Dust Segregation Structure. • Built in Dust Segregation System DSS with cyclone flow structure, diverts particulates from sensor element. • High resolution and repeatability, even at low flow rates.

D6F-W

Abstract: Omron
Contextual Info: D6F-W MEMS Flow Rate Sensor A Compact Sensor That Uses OMRON’s Unique Flow Path Structure for High-performance Flow Rate Measurement. • Anti-dust performance enhanced by OMRON’s unique three-dimensional flow path structure. • High accuracy of ±5% FS.

bias stability gyro mems

Contextual Info: CRH02 Technical Datasheet Analogue Angular Rate Sensor High Performance MEMS Gyroscope www.siliconsensing.com Sensing Axis Features 1 General Description • Proven and Robust silicon MEMS VSG3Q vibrating ring structure • Four rate ranges available: ±25°/s, ±100°/s, ±200°/s

velocity sensor

Abstract: "Velocity Sensor" gas oil sensor MEMS D6F-V03A1 dehumidifier velocity sensors tunnel sensor MEMS humidity sensor resistance 10k SH-003T-P0
Contextual Info: MEMS Air Velocity Sensor D6F-V03A1 Unique dust separating structure, developed by OMRON, in a compact and highly efficient FLOW-SENSOR. • Unique dust segregation structure. • +/-10% Full-Scale repeatable accuracy achieves consistent air velocity measurement, in a cost efficient package.

S12028

Contextual Info: IR-enhanced Si PIN photodiode S12028 Enhanced near IR sensitivity, using a MEMS techonology The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of the photodiode. The S12028 offers significantly higher sensitivity than our previous product S5821 .

Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.

1NA101

Abstract: S8890 APD S11519
Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.

Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically

"Air Flow Sensor"

Abstract: S3B-ZR-SM2-TF S3B-ZR D6F-W01A1 D6F-W04A1 SZH-002T-P0 SZH-003T-P0 SZH-003T-P air flow sensor
Contextual Info: MEMS Air Flow Sensor D6F-W The unique dust separating structure, developed by Omron, is a compact and highly efficient Flow-Sensor. NEW • Dust resistant design prevents contamination in an efficient flow-sensor. • ±5% Full-Scale repeatable accuracy achieves reliable air

D6F marking

Abstract: d6f-p D6F-0010A1 0010A1 cpap D6F-P0010A1 gas oil sensor MEMS medical Flow Sensor MEMS, 0-1 LPM terminal ring jst
Contextual Info: MEMS Flow Sensor D6F-P A Compact, High-performance Flow Sensor with Dust Segregation Structure. • Built in Dust Segregation System DSS . ■ High resolution and repeatability, even at low flow rates. ■ Barbed ports with connector or PCB terminals or manifold mount with connector versions.

Photodiodes

Abstract: yag Electrical circuit S11499 TO-8 Package
Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Contextual Info: I R-enhanced Si PI N photodiodes S11499 series Large area, enhanced near I R sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Contextual Info: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on

CCD area sensor 2.2 black white

Abstract: mems Infrared light source
Contextual Info: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on

S11500-1007

Abstract: CCD area sensor 2.2 black white
Contextual Info: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the

Contextual Info: 700volt MEMS SUPERJUNCTION MOSFETS for Green Energy APPLICATIONS. by Sam Anderson IceMOS Technology, USA T. Ishiguro (IceMOS Technology, Japan) IceMOS Technology Corporation 1 Introduction In many electronics applications a load has to be fed with a current at variable frequency and

mems

Abstract: mems pacemaker MEMS ic silicon mems microphone glass frit bolometer mems microphone structure MEMS IC Introduction to accelerometers bolometer sensor
Contextual Info: MEMS and Microsystem Packaging NMI at INNOS June 2005 CONFIDENTIAL Introduction ƒ Background to MEMS and Microsystem Packaging ƒ Types of Packaging – “Zero level” packaging – Primary packaging – Secondary packaging [Page 1] CONFIDENTIAL Silicon IC Systems

pressure sensors used for measuring blood pressure

Abstract: MEMS blood pressure sensor MEMS pressure sensor infusion pump pressure transducer blood pressure sensors heart beat sensor wheatstone bridge pressure sensor pacemaker microprocessor heart pulse rate sensor infusion pumps
Contextual Info: General Papers Medical MEMS Technology: Design, Fabrication, Packaging And High Volume Manufacturing Techniques Contributors: Roberta J. Swafford—IC Sensors Harold Joseph—IC Sensors Vladimir Vaganov—IC Sensors INTRODUCTION same way that the price of IC’s has decreased. However, a