STRH8N10NG Search Results
STRH8N10NG Datasheets Context Search
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Contextual Info: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability |
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STRH8N10 STRH8N10N1 STRH8N10NG | |
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Contextual Info: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability |
Original |
STRH8N10 STRH8N10N1 STRH8N10NG | |
|
Contextual Info: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability |
Original |
STRH8N10 STRH8N10N1 STRH8N10NG |