STR 450 A Search Results

Contextual Info: C-Tap Connectors for Copper Conductors Positive, all-around compression with low resistance and high pull-out values. C o m p r e s s i o n C-Taps for Certified to 600V • • Ideal for pigtailing, 2-way splicing or tapping to an unbroken continuous main

ln2054

Abstract: 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 5 10 15 20 25 30 KG01420SX KG01421SX lN2789 KG01422SX OS35•08A OS35·02A OS35·04A 55HQ020 lN2128 lN2128A 50 50 50 50 51 52 52 60 60 60 ~~~~~~OSX ~g

4000B

Abstract: 4428B 1-OF-64
Contextual Info: 4428B INTERNATIONAL, INC. CMOS BINARY-TO-OCTAL DECODER FEA TU R ES DESCRIPTION The 4428B is a one-of-eight CMOS Strobed Decoder. The three inputs labeled Xq, X-j, and X 2, constitute a three-bit word which defines a number from 0 to 7, and activates one of eight

Contextual Info: R&E 4428B INTERNATIONAL, INC. CMOS BINARY-TO-OCTAL DECODER FEA TU RES ♦ ♦ ♦ Binary-to-Octal Decoding Buffered Outputs Go High on Selection Strobe Input for Simple Expansion V DD "3 " 1 I 14 13 D ESCRIPTIO N The 4428B is a one-of-eight CMOS Strobed Decoder. The three inputs labeled X q, X-j , and

Contextual Info: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into

Contextual Info: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into

27L08-45

Abstract: 2708 eprom 27L08 2708-45 74LS TTL 245 TMS 2708 JL a1023 ansi y32.14 diagram 2708 memory TMS2708
Contextual Info: TMS 2708-35 JL. TMS 2708-45 JL, TMS 27L08-45 JL 1024-WORD BY 8-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES MOS LSI D E C E M B E R 1 9 7 9 - R E V I S E D M A Y 1982 1024 X 8 Organization A ll Inputs and O utputs F ully T T L Compatible 24-PIN CER P AK D U A L -IN -L IN E PACKAG E

Burndy Y35 hypress parts breakdown

Abstract: Penetrox A Electric Joint Compound Burndy penetrox burndy compression die index csa 26 how to add oil to y39 crimps burndy y644m Burndy Y35 hypress burndy Y35 y644m Burndy penetrox A
Contextual Info: BURNDY Compression INTRODUCTION MEDIUM AND LARGE HYDENT Copper and aluminum compression terminals and splices for terminating conductors from #8 AWG through 2000 kcmil. The medium and large HYDENT™ line is designed for terminating and splicing medium

cdm12.1

Abstract: lcd tv Philips 32 power supply diagram SAA3010T AUTO RADIO TAPE PLAYER cd loader L1210 ic HEF4052 TDA2515 L1210 TUNING FM RADIO RECEIVER TEA5757H
Contextual Info: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ106A GaAs HALL-EFFECT ELEMENTS CYSJ106A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

MX16C450

Abstract: MX82C50A Macronix marking MX82C50 mx83c
Contextual Info: MACRONIX INC S3E » SbûflêôS Q O G G M G G M X 16C 450 - M X 82C 50A - M X 82C 50 m b74 • HA C X A ~T~ 7 S '- 3 7~ 0 5 ASYNCHRONOUS COMMUNICATIONS ELEMENT FEATURES DESCRIPTION • Easily interfaces to most popular microprocessors • Adds or deletes standard

Contextual Info: Photodiode-Chip EPC-525-1.4 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 1360 1000 960 typ. thickness 270 (±20) µm anode gold alloy, 1.5 µm cathode

k 2545

Contextual Info: Photodiode-Chip EPC-525-0.5-2 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 430 Ø100 typ. thickness 270 (±20) µm 470 anode gold alloy, 1.5 µm cathode

Contextual Info: Photodiode-Chip EPC-525-2.5 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 2460 1775 1735 typ. thickness 270 (±20) µm anode gold alloy, 1.5 µm cathode

Contextual Info: Photodiode-Chip EPC-525-0.5 Preliminary 03.05.2007 rev. 04/07 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 460 360 300 typ. thickness gold alloy, 1.5 µm Description Narrow bandwidth and

Contextual Info: H D 6 1 811 D S P-R A M Series The DSP-RAM (H D 61811) is a high perform ance digital signal processor using RAM in place o f ROM in the DSP (H D 61810), which perm its desired programs to be load by external control. In addition, as the DSP-RAM provides the

STR F 9208 L

Abstract: P45M cdm-9 CD930 CD-930G-250 HTCT250-2-1 120mm2 GCE250-250 CD-930H INDEX11
Contextual Info: ELECTRICAL SOLUTIONS A. System Overview CD-920 Crimping Dies B1. Cable Ties B2. Cable Accessories • Part number permanently marked on crimping die for easy identification • Provides circumferential crimp results in terminations with premium electrical and mechanical performance

EPIGAP Optoelektronik

Contextual Info: Photodiode-Chip EPC-525-0.9 17.04.2009 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 860 800 720 typ. thickness anode gold alloy, 1.5 µm Description Narrow bandwidth and high spectral sensitivity in

Contextual Info: Photodiode-Chip EPC-525-0.5-1 17.04.2009 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 430 Ø110 typ. thickness 270 (±20) µm 470 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm

UV LED 280 nm

Abstract: GaP photodiode uv photodiode, GaP UV photodiodes UV-c LED uvb sensor UVC LED
Contextual Info: FlatLog System Rev 03/08 EPIGAP's FlatLog System for advanced optical measurement applications is intended for measuring and storing UV irradiance and UV dose energy density data. Especially designed for maintenance and calibration purposes of UV curing facilities, this unique

Contextual Info: Photodiode-Chip EPC-525-1.4 22.09.2009 rev. 06 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 1360 1000 960 typ. thickness 270 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm

Contextual Info: EPC-525-2.5 Photodiode-Chip 22.09.2009 rev. 06 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 2460 1775 1735 typ. thickness anode gold alloy, 1.5 µm Description Narrow bandwidth and high spectral sensitivity in

Contextual Info: Photodiode-Chip EPC-525-0.5 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up 460 typ. dimensions (µm) 360 300 typ. thickness gold alloy, 1.5 µm Description Narrow bandwidth and high spectral sensitivity in

i8052

Abstract: MAZET str 450 a 8052 basic
Contextual Info: MCS-EB1 for MCS3 und MCSi PRODUCT INFORMATION Evaluation Board for JenColour sensors ! Evaluation board for start-up and demonstration ! MCS-EB1 as demonstration board and exemplary application system for simple color recognition with the JenColour sensors