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    STPSC6H065D Search Results

    STPSC6H065D Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STPSC6H065D
    STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 6A TO220AC Original PDF 14
    STPSC6H065DI
    STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 6A TO-220AC Original PDF 14
    STPSC6H065DLF
    STMicroelectronics SILICON CARBIDE DIODES Original PDF 415.96KB
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    STPSC6H065D Price and Stock

    STMicroelectronics

    STMicroelectronics STPSC6H065DLF

    DIODE SIC 650V 6A POWERFLAT HV
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    STMicroelectronics STPSC6H065D

    DIODE SIL CARB 650V 6A TO220AC
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    STMicroelectronics STPSC6H065D 653 1
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    STMicroelectronics STPSC6H065DI

    DIODE SIC 650V 6A TO220AC INS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC6H065DI Tube 774 1
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    Mouser Electronics STPSC6H065DI
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    Newark STPSC6H065DI Bulk 1
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    STMicroelectronics STPSC6H065DI 1
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    STMicroelectronics STPSC6H065D (650V)

    Sic Schottky Diode, 650V, 6A, To-220Ac; Product Range:-; Diode Configuration:Single; Repetitive Peak Reverse Voltage:650V; Average Forward Current:6A; Total Capacitive Charge:18Nc; Diode Case Style:To-220Ac; No. Of Pins:2 Pin Rohs Compliant: Yes |Stmicroelectronics STPSC6H065D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark STPSC6H065D (650V) Bulk 1
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    STPSC6H065D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet − production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ K K A A K TO-220AC STPSC6H065D High forward surge capability


    Original
    STPSC6H065 O-220AC STPSC6H065D PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original
    STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original
    STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet − production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ K K Description The SiC diode is an ultrahigh performance power


    Original
    STPSC6H065 O-220AC STPSC6H065D PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A K K K


    Original
    STPSC6H065 PDF