STMICROELECTRONICS LOT NUMBER Search Results

bul128db

Abstract: BUL128 BUL128D-B BUL128D
Contextual Info: BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n n n n STMicroelectronics PREFERRED SALES TYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

Contextual Info: BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n n n n STMicroelectronics PREFERRED SALES TYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

MX25L512

Abstract: 25l1005 mx25l1005 ATMEL 25f512 25F1024A 25f512 pm25lv010 serial flash M25P10 25L100 25F102
Contextual Info: Application Note Replacing STM , Spansion®, NexFlash®, PMC® & Atmel®’s 512K/1M Serial Flash with Macronix® 512K/1M Serial Flash January 2009 Part Number Comparison ® Part Number ® Macronix ® STMicroelectronics Spansion 512Kb serial MX25L512 flash

STMicroelectronics date CODE

Abstract: AN926 APPLICATION NOTE stmicroelectronics traceability LOT code stmicroelectronics date code STMicroelectronics AN926 STMicroelectronics lot number STMicroelectronics PRODUCT code date
Contextual Info: AN926 APPLICATION NOTE Brand Traceability with ZEROPOWER and TIMEKEEPER To insure traceability to specific assembly and test operations, ST clearly brands a date code on every device, and also an encapsulation code on CAPHAT products. The 9-character date code Figure 1 is positioned at the top of the label, beside the ST logo. This presents

BYW98-100

Abstract: stth302c STMicroelectronics marking code date diode 400v 2A ultrafast 1a 200v diode BYW98-150 BYW100-150 1006B BYT01-400
Contextual Info:  PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/AD/1006B PCN DSG/AD/1006 UPDATE Important note: this document replaces PCN DSG/AD/1006 document sent in August 2001 and supersedes any preceding communication and sampling information related to the announced

M24C08

Abstract: M95256 QREE0102 M9556
Contextual Info: QREE0102 QUALIFICATION REPORT PDIP 8 ASE Assembly Plant Transfer Using M95256 and M24C08 THIS REPORT This Qualification Report summarizes the reliability trials and results performed to qualify the transfer of the assembly plant of our subcontractor ASE from Taiwan to Philippines for PDIP 8 Plastic Dual In line

Ablebond 8390

Abstract: LM358CD TL431CD ppt on ic mp8000 CH4 TL082CD PPF leadframe LM358D LM393 TL082
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG-COM/03/145 PCN LEADFREE PLATING FOR SO8 PACKAGE IN MUAR first lines 2003/02/7 PCN DSG-COM/03/145 Product Family /Commercial Product STANDARD LINEAR products in SO8 package Type Of Change Package assembly process change

battery trace code

Abstract: AI02493 AN928
Contextual Info: AN928 APPLICATION NOTE SNAPHAT Assembly and Process Control The SNAPHAT assembly process is fully automated so as to produce a highly reliable product consistently in volume. This automated equipment takes advantage of microcomputer controlled robotics to obtain the

J-STD-020A

Abstract: pcb design 0,5 mm pitch 5x5 matrix STM top-side marking 10E12 10E4 10E8 AN1235 IEC286-3 Tape Resistivity 10E8 Ohm 10E4 iec 286-3 stmicroelectronics
Contextual Info: AN1235 APPLICATION NOTE  ASD , IPAD FLIP-CHIP: PACKAGE DESCRIPTION AND RECOMMENDATIONS FOR USE I - INTRODUCTION The competitive market of portable equipment, notably the mobile phone market, is driven by a challenging development of highly integrated products. To allow manufacturers of portable equipment to reduce the

BUV48A

Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification

25L4005

Abstract: mx25l8005 25l4005a 25L400 NX25P80 MXIC serial Flash M25P40 AT25F4096 MXIC LOT NUMBER 25F4096 Macronix
Contextual Info: APPLICATION NOTE Migrating to the Macronix 4M/8M Serial Flash Families from STM, Spansion, NexFlash & Atmels 4M/8M Serial Flash Cross Reference Part Number Macronix 4Mb serial flash MX25L4005A 8Mb serial flash MX25L8005 STMicroelectronics Spansion NexFlash

AM29 FLASH

Abstract: "NOR Flash" intel retention amd nor flash LOT code stmicroelectronics AM29 AMD part numbering Lot code M29F010B M29F010B Lot code M29F040 M29F040B
Contextual Info: AN1185 APPLICATION NOTE Designing for Compatibility between ST and AMD Flash Memories CONTENTS • INTRODUCTION ■ FLASH MEMORY TECHNOLOGY COMPARISON ■ PORTABILITY ISSUES ■ DEVICE AND MANUFACTURER CODES ■ PART NUMBERS ■ EQUIVALENT PART NUMBERS ■

MIL-STD 833 test method 3015

Abstract: ST1305 M14C04 M14C16 ST1200 ST1305B ST1331 ST1333 ST1335 ST1336
Contextual Info: D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging • Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: potting side contact side – Support for the chip

2702 eprom

Abstract: ST1305B ST1331 ISO/IEC 7816-1 micromodule MICROMODULES M14C04 M14C16 ST1200 ST1333
Contextual Info: D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging • Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: potting side contact side – Support for the chip

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

VDFPN 8x6

Abstract: MARKING code mf stmicroelectronics marking AAAA SO8 NARROW TOPSIDE MARKING STMicroelectronics AN1995 VDFPN STMicroelectronics TRACEABILITY code MARKING code mf stmicroelectronics so16 MARKING SO8
Contextual Info: AN1995 APPLICATION NOTE Serial Flash Memory Device Marking The market trend is for ever greater package miniaturization. Today’s small packages already have very limited space for the device marking. The need to be readable sets a lower limit on the character size. This, along with the upper limit on the

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

AN2348

Abstract: EIA standards 763 EIA 481-C flip chip bga 0,8 mm WLCSP stencil design EIA 763 Service Manual smd rework station WLCSP chip mount WLCSP flip chip BUT12
Contextual Info: AN2348 Application note IPAD 400 µm Flip Chip: package description and recommendations for use Introduction This document provides package and usage recomendation information for 400 µm pitch Flip Chips. For information on 500 µm Flip Chips, see Application note AN1235.

Contextual Info: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications

Contextual Info: STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is

Contextual Info: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications

Contextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA

SO8 Wide Package

Abstract: M25P10 QRFS0002
Contextual Info: QRFS0002 QUALIFICATION REPORT M25P10 Using CMOST6X-U35 Technology at Catania M5 Fab Table 1. Product and Process being Qualified Product M25P10 Package SO8 Process CMOST6X-U35 Fab Line Catania M5 PRODUCT DESCRIPTION The M25P10 is a 1 Mbit 128K x 8 bit Low Voltage, Paged Flash Memory, accessed by a 20 MHz SPI

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics