STMICROELECTRONICS DIODE MARKING CODE ET Search Results

dl46

Abstract: DL46 sot23 SOT23-6L Marking Code dl46 HDMIULC6-4SC6 JESD97 MO178AB SMP75-8
Contextual Info: HDMIULC6-4SC6 Ultra large bandwidth ESD protection Main applications • HDMI ports at 1.65 Gb/s and up to 3.2 Gb/s ■ IEEE 1394a, b, or c up to 3.2 Gb/s ■ USB 2.0 ports up to 480 Mb/s Hi-Speed ■ Ethernet port: 10/100/1000 Mb/s ■ Video line protection

USBLC6-2SC6

Abstract: UL26 USBLC6-2P6 st microelectronics reliability USBLC6-2SC6 SMP75-8
Contextual Info: USBLC6-2 ASD Application Specific Devices VERY LOW CAPACITANCE ESD PROTECTION MAIN APPLICATIONS • USB2.0 ports at 480Mbps (high speed) and USB OTG ports ■ Backwards Compatible with USB1.1 Low and full speed ■ Ethernet port: 10/100Mb/s ■ SIM card protection

ic MARKING QG

Abstract: GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE
Contextual Info: STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD6NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)

ic MARKING QG

Abstract: STGD3NC60HD
Contextual Info: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)

STMicroelectronics Date Code DPAK

Abstract: ic MARKING QG STGD3NC60H
Contextual Info: STGD3NC60H N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD3NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT

GF20NB60S

Abstract: JESD97 STGF20NB60S light dimmer igbt SCHEMATIC dimmer igbt GF20N
Contextual Info: STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGF20NB60S VCES VCE sat (Max) @25°C IC @100°C 600 V < 1.7 V 13 A LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

STMicroelectronics DIODE marking code Et

Abstract: STMicroelectronics dx DIODE marking code MARKING code mx stmicroelectronics sm6t15ca 6.8V bidirectional transil SM6T39A EX D0-214AA SM6T10A SM6T15A SM6T18A
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

STMicroelectronics DIODE marking code Et

Abstract: STMicroelectronics DIODE marking code DX diodes STmicroelectronics marking MP STMicroelectronics DIODE marking code ER STMicroelectronics DIODE marking code EE transil 6.8v STMicroelectronics marking code date me code mx stmicroelectronics SM6T12A SM6T22A
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

GP7NC60HD

Abstract: GF7NC60HD gp7nc60 STGB7NC60HDT STGB7NC60HD STGB7NC60HDT4 STGF7NC60HD STGP7NC60HD gf7nc GP7NC60H
Contextual Info: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C

GP7NC60HD

Abstract: GF7NC60HD GP7NC60H GF7NC60 gp7nc60 GB7NC60HD STGF7NC60HD STGP7NC60HD gf7nc ST T4 1060
Contextual Info: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C

STIEC45-33AS

Abstract: STIEC45-27AS STIEC45-XXAS STIEC45-24AS STIEC45-26AS STIEC45-28AS Transil smc 24as
Contextual Info: STIEC45-XXAS Transil for IEC 61000-4-5 compliance Features • Peak pulse current: 500 A 8/20 s, 1.2/50 µs ■ Stand off voltage range: from 24 V to 33 V ■ Unidirectional types ■ Low leakage current – 0.2 µA at 25 °C – 1 µA at 85 °C ■

Contextual Info: HSP061-2Y Automotive 2-line ESD protection for high speed lines Datasheet - production data Complies with following standards: • ISO 10605 - C = 150 pF, R = 330 Ω – 30 kV air discharge – 15 kV (contact discharge) • ISO 10605 - C = 330 pF, R = 330 Ω

transil sm6t

Abstract: sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb
Contextual Info: SM6T Transil Features • Peak Pulse Power: 600 W 10/1000 µs ■ Breakdown voltage range: From 6.8 V to 220 V ■ Uni and Bidirectional types ■ Low clamping factor ■ Fast response time K ■ UL recognized Unidirectional A Bidirectional Description

schematic diagram UPS

Abstract: GE50NC60VD ST IGBT code marking STGE50NC60VD ic MARKING QG schematic diagram UPS inverter schematic inverter STGE50NC60VD st 358 ST UPS design JESD97
Contextual Info: STGE50NC60VD N-channel 50A - 600V - ISOTOP Very fast PowerMESH IGBT Features Type VCES STGE50NC60VD 600V VCE sat (Max) IC @25°C @100°C 2.5V 50A • High current capability ■ High frequency operation ■ Low CRES/CIES ratio (no cross-conduction susceptibility

schematic diagram UPS

Abstract: ST IGBT code marking GE50NC60WD schematic welding inverters schematic diagram UPS inverter schematic diagram welding inverter st 358 ST UPS design JESD97 STGE50NC60WD
Contextual Info: STGE50NC60WD N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESH IGBT Features Type VCES STGE50NC60WD 600V VCE sat (Max) IC @25°C @100°C 2.5V 50A • High current capability ■ High frequency operation ■ Low CRES/CIES ratio (no cross-conduction

Contextual Info: STGY50NC60WD N-channel 600V - 65A - Max247 Ultra fast switching PowerMESH IGBT Features Type VCES STGY50NC60WD 600V IC VCE sat (max)@25°C @100°C < 2.5V 65A • Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility)

GP19NC60WD

Contextual Info: STGP19NC60WD N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT General features Type VCES STGP19NC60WD 600V VCE sat IC @100°C (max)@25°C < 2.5V 19A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode

STGW35HF60WD

Contextual Info: STGW35HF60WD 35 A, 600 V ultra fast IGBT Features • Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses ■ VCE sat classified for easy parallel connection ■ Ultra fast soft recovery antiparallel diode 2 Applications

GW19NC60WD

Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

Contextual Info: STS4DNF30L Dual N-channel 30 V, 0.039 Ω, 4 A SO-8 STripFET Power MOSFET Features Type VDSS RDS on max. ID STS4DNF30L 30 V < 0.050 Ω 4A • Standard outline for easy automated surface mount assembly ■ Low threshold drive ) s ( ct u d o S0-8 r P e

Contextual Info: STS3N95K3 N-channel 950 V, 5 Ω, 0.4 A SO-8 Zener-protected SuperMESH3 Power MOSFET Preliminary data Features Order code VDSS RDS on max ID Pw STS3N95K3 950 V < 6.3 Ω 0.4 A 2W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized

STGW30NC60VD

Abstract: GW30NC60VD JESD97
Contextual Info: STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW30NC60VD 600V VCE sat (Max)@ 25°C IC @100°C <2.5V 40A • High current capability ■ High frequency operation up to 50KHz ■ Very soft ultra fast recovery antiparallel diode

SM6T36CAY

Abstract: SM6T56CAY SM6T39CAY SM6T33CAY SM6T56AY 17741 SM6T75AY marking LXY SM6T15CAY nsy ca
Contextual Info: SM6TY Automotive 600 W Transil Datasheet − production data Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) A ■ Stand-off voltage range: from 6 V to 70 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C

f10nk50z

Contextual Info: STF10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT STF10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested