STMICROELECTRONICS DIODE MARKING CODE ET Search Results

pfr 852 diode

Abstract: STMicroelectronics marking code date STMicroelectronics marking code date diode PFR850 PRF856 856 diode
Contextual Info: PFR850→856 FAST RECOVERY RECTIFIER DIODE PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILITY APPLICATIONS AC-DC POWER SUPPLIES AND CONVERTERS FREE WHEELING DIODES, etc. DESCRIPTION Their high efficiency and high reliability combined

pfr 852 diode

Abstract: PFR850 ED2A
Contextual Info: PFR850→856  FAST RECOVERY RECTIFIER DIODE PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILITY APPLICATIONS AC-DC POWER SUPPLIES AND CONVERTERS FREE WHEELING DIODES, etc. DESCRIPTION Their high efficiency and high reliability combined

UL46

Abstract: st microelectronics reliability USBLC6-2SC6 USBLC6-4SC6 marking code fs ls/fs usb Pspice SMP75-8
Contextual Info: USBLC6-4SC6 ASD VERY LOW CAPACITANCE ESD PROTECTION MAIN APPLICATIONS • USB2.0 ports up to 480Mb/s high speed ■ Backwards compatible with USB1.1 low and full speed ■ Ethernet port: 10/100Mb/s ■ SIM card protection ■ Video line protection

Date Code Marking STMicroelectronics

Abstract: STMicroelectronics DIODE marking code STMicroelectronics marking code date STMicroelectronics marking code date diode LDP24AS Date Code Marking STMicroelectronics diode
Contextual Info: LDP24AS  TRANSIL LOAD DUMP PROTECTION FEATURES TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE COMPLIANT WITH MAIN STANDARDS SUCH AS: -ISO / DTR 7637 DESCRIPTION

Contextual Info: LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY: 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS SUCH AS: -IS O /D T R 7637

UL46

Abstract: st microelectronics reliability USBLC6-2SC6 USBLC6-4SC6 SMP75-8 552p marking UL46 usb/UL46
Contextual Info: USBLC6-4SC6 ASD Application Specific Devices VERY LOW CAPACITANCE ESD PROTECTION MAIN APPLICATIONS • USB2.0 ports up to 480Mb/s (high speed) ■ Backwards compatible with USB1.1 low and full speed ■ Ethernet port: 10/100Mb/s ■ SIM card protection

dl46

Abstract: DL46 sot23
Contextual Info: HDMIULC6-4SC6 Ultra large bandwidth ESD protection Main applications • HDMI ports at 1.65 Gb/s and up to 3.2 Gb/s ■ IEEE 1394a, b, or c up to 3.2 Gb/s ■ USB 2.0 ports up to 480 Mb/s Hi-Speed ■ Ethernet port: 10/100/1000 Mb/s ■ Video line protection

dl46

Abstract: DL46 sot23 SOT23-6L Marking Code dl46 HDMIULC6-4SC6 JESD97 MO178AB SMP75-8
Contextual Info: HDMIULC6-4SC6 Ultra large bandwidth ESD protection Main applications • HDMI ports at 1.65 Gb/s and up to 3.2 Gb/s ■ IEEE 1394a, b, or c up to 3.2 Gb/s ■ USB 2.0 ports up to 480 Mb/s Hi-Speed ■ Ethernet port: 10/100/1000 Mb/s ■ Video line protection

UL26

Abstract: USBLC6-2SC6 STMicroelectronics marking code date SOT 23 USBLC6-2P6
Contextual Info: USBLC6-2 ASD Application Specific Devices VERY LOW CAPACITANCE ESD PROTECTION MAIN APPLICATIONS • USB2.0 ports at 480Mbps (high speed) and USB OTG ports ■ Backwards Compatible with USB1.1 Low and full speed ■ Ethernet port: 10/100Mb/s ■ SIM card protection

USBLC6-2SC6

Abstract: UL26 USBLC6-2P6 st microelectronics reliability USBLC6-2SC6 SMP75-8
Contextual Info: USBLC6-2 ASD Application Specific Devices VERY LOW CAPACITANCE ESD PROTECTION MAIN APPLICATIONS • USB2.0 ports at 480Mbps (high speed) and USB OTG ports ■ Backwards Compatible with USB1.1 Low and full speed ■ Ethernet port: 10/100Mb/s ■ SIM card protection

STMicroelectronics DIODE marking code DX

Abstract: STMicroelectronics DIODE marking code Et transil 6.8v STMicroelectronics marking code date me 6.8V bidirectional transil MARKING code mx stmicroelectronics code mx stmicroelectronics STMicroelectronics DIODE marking code ER GW marking code diode STMicroelectronics DIODE marking code gw
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

ic MARKING QG

Abstract: GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE
Contextual Info: STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD6NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)

STMicroelectronics Date Code DPAK

Contextual Info: STGD6NC60H N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD6NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT

Contextual Info: STDD15 series LOW CAPACITANCE DETECTION DIODE MAIN PRODUCT CHARACTERISTICS IF AV 10 mA VRRM 15 V Tj (max) 150 °C VF (max) 0.51 V ) s ( ct e t e ol Low diode capacitance Device designed for RF application Low profile package Available in 3 configurations

GP6NC60HD

Abstract: L30 diode part marking STGP6NC60HD STGF6NC60HD STMicroelectronics date code TO-220 GF6NC60HD
Contextual Info: STGP6NC60HD STGF6NC60HD N-CHANNEL 6A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP6NC60HD STGF6NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V

STGP3NC60HD

Contextual Info: STGP3NC60HD STGF3NC60HD N-CHANNEL 3A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP3NC60HD STGF3NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V

dimmer diagrams IGBT

Abstract: GF20N GF20NB60S STGF20NB60S
Contextual Info: STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGF20NB60S VCES VCE sat (Max) @25°C IC @100°C 600 V < 1.7 V 13 A LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

STMicroelectronics Date Code DPAK

Abstract: ic MARKING QG STGD3NC60H
Contextual Info: STGD3NC60H N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD3NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT

gf3nc120hd

Abstract: IGBT GF3NC120HD ic MARKING QG STGF3NC120HD
Contextual Info: STGF3NC120HD N-CHANNEL 3A - 1200V TO-220FP FAST PowerMESH IGBT with Integral Damper Diode Table 1: General Features Figure 1: Package TYPE VCES VCE sat (Max) @25°C IC @100°C STGF3NC120HD 1200 V < 2.8 V 3A • ■ ■ ■ LOW ON-VOLTAGE DROP (Vcesat)

IGBT GF3NC120HD

Abstract: GF3NC120HD GF3NC120 STGF3NC120HD
Contextual Info: STGF3NC120HD N-CHANNEL 3A - 1200V TO-220FP FAST PowerMESH IGBT with Integral Damper Diode Table 1: General Features Figure 1: Package TYPE VCES VCE sat (Max) @25°C IC @100°C STGF3NC120HD 1200 V < 2.8 V 3A • ■ ■ ■ LOW ON-VOLTAGE DROP (Vcesat)

GF20NB60S

Abstract: JESD97 STGF20NB60S light dimmer igbt SCHEMATIC dimmer igbt GF20N
Contextual Info: STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGF20NB60S VCES VCE sat (Max) @25°C IC @100°C 600 V < 1.7 V 13 A LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

Contextual Info: STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT Table 1: General Features TYPE STGF20NB60S Figure 1: Package VCES VCE sat (Max) @25°C IC @100°C 600 V < 1.7 V 13 A LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

gf3nc

Abstract: GP3NC60HD
Contextual Info: STGP3NC60HD STGF3NC60HD N-CHANNEL 3A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP3NC60HD STGF3NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V

STGD3NC60HD

Contextual Info: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)