STMICROELECTRONICS DIODE MARKING CODE EE Search Results

MARKING 1F2

Abstract: STMicroelectronics DIODE marking code EE ESDA18-1F2 transil diode DIODE 76A AN1235 st Diode marking EE 1F2 Diode STMicroelectronics DIODE marking code
Contextual Info: ESDA18-1F2 ASD Application Specific Devices TRANSIL : Transient Voltage Suppressor FEATURES AND BENEFITS: • ■ ■ ■ ■ Stand-off voltage 16V Unidirectional device Low clamping factor VCL/VBR Fast response time Very thin package: 0.65 mm DESCRIPTION

STMicroelectronics DIODE marking code DX

Abstract: STMicroelectronics DIODE marking code Et transil 6.8v STMicroelectronics marking code date me 6.8V bidirectional transil MARKING code mx stmicroelectronics code mx stmicroelectronics STMicroelectronics DIODE marking code ER GW marking code diode STMicroelectronics DIODE marking code gw
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

STMicroelectronics DIODE marking code EE

Contextual Info: ST1G3234 1-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C

STMicroelectronics DIODE marking code Et

Abstract: STMicroelectronics dx DIODE marking code MARKING code mx stmicroelectronics sm6t15ca 6.8V bidirectional transil SM6T39A EX D0-214AA SM6T10A SM6T15A SM6T18A
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

STMicroelectronics DIODE marking code Et

Abstract: STMicroelectronics DIODE marking code DX diodes STmicroelectronics marking MP STMicroelectronics DIODE marking code ER STMicroelectronics DIODE marking code EE transil 6.8v STMicroelectronics marking code date me code mx stmicroelectronics SM6T12A SM6T22A
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

transil diode equivalent

Contextual Info: ESDA18-1F2 Transil , transient voltage suppressor Features • Stand-off voltage 16V ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.65 mm Flip Chip 4 bumps Complies with the following standards

st Diode marking EE

Abstract: MARKING 1F2 AN1235 AN1751 ESDA18-1F2 JESD97
Contextual Info: ESDA18-1F2 Transil , transient voltage suppressor Features • Stand-off voltage 16V ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.65 mm Flip Chip 4 bumps Complies with the following standards

Contextual Info: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C

diode B3 7

Abstract: ST4G3234 ST4G3234BJR STMicroelectronics DIODE marking code EE
Contextual Info: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C

SM6T36CAY

Abstract: SM6T39CAY SM6T33CAY 7637-2 protection circuit 7637-2 pulse 5 ISO-7637-2 pulse 5 mky marking 17741 SM6T27CAY SM6T7V5AY
Contextual Info: SM6TY Automotive 600 W Transil Features • peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) A ■ stand-off voltage range: from 6.4 V to 58 V ■ unidirectional and bidirectional types ■ low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C

transil sm6t

Abstract: sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb
Contextual Info: SM6T Transil Features • Peak Pulse Power: 600 W 10/1000 µs ■ Breakdown voltage range: From 6.8 V to 220 V ■ Uni and Bidirectional types ■ Low clamping factor ■ Fast response time K ■ UL recognized Unidirectional A Bidirectional Description

diode GU do-214aA

Abstract: STMicroelectronics DIODE marking code Et marking codes ER diode SMB marking lg smb ST marking code GL transil sm6t UM marking code DO214AA STMicroelectronics DIODE marking code EE DIODE SM6T75A GW marking code diode
Contextual Info: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■

transil marking EM

Contextual Info: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■

ST marking code GL

Abstract: marking codes ER diode SMB Part Marking STMicroelectronics SM6T68CA STMicroelectronics DIODE marking code DX diode GU do-214aA GW marking code diode st Diode marking EE STMicroelectronics DIODE marking code Et DIODE SM6T75A SM6T56A
Contextual Info: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■

Contextual Info: ST1G3234B 1-bit dual supply bus buffer level translator with A-side series resistor Features • High speed: tPD = 4.4ns Max. at TA = 85°C VCCB = 1.65V; VCCA = 3.0V ■ Low power dissipation: ICCA = ICCB = 5 A(Max.) at TA = 85°C ■ Symmetrical output impedance:

SM6T36CAY

Abstract: SM6T56CAY SM6T39CAY SM6T33CAY SM6T56AY 17741 SM6T75AY marking LXY SM6T15CAY nsy ca
Contextual Info: SM6TY Automotive 600 W Transil Datasheet − production data Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) A ■ Stand-off voltage range: from 6 V to 70 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C

SM6T18CAY

Abstract: sm6t39cay
Contextual Info: SM6TY Automotive 600 W Transil Datasheet − production data Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) A ■ Stand-off voltage range: from 6 V to 70 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C

ST MX mark diode

Abstract: SM6T39A EX SM6T150A SM6T56A diode GU do-214aA DIODE marking le st smb marking mp marking lg smb SM6T30CA SM6T220A
Contextual Info: SM6T Transil Features • Peak pulse power: 600 W 10/1000 µs ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Operating Tj max: 150 °C ■ JEDEC registered package outline A Complies with the following standards

Contextual Info: STL3N65M5 N-channel 650 V, 0.90 Ω typ, 3 A MDmesh V Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package Datasheet — preliminary data Features Order code RDS on max. STL3N65M5 < 1.1 Ω 3A 2 3 4 (1) 1. The value is rated according to Rthj-case 8 5 7 6

Contextual Info: ST4G3235 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.3ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C

8N80K5

Contextual Info: STL8N80K5 N-channel 800 V, 0.76 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − preliminary data Features Order code VDS RDS on max. ID STL8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area ■

JESD97

Abstract: ST1G3234 ST1G3234BJR
Contextual Info: ST1G3234 1-bit dual supply bus buffer level translator with A-side series resistor Features • High speed: tPD = 4.4ns Max. at TA = 85°C VCCB = 1.65V; VCCA = 3.0V ■ Low power dissipation: ICCA = ICCB = 5µA(Max.) at TA = 85°C ■ Symmetrical output impedance:

Contextual Info: STL15N65M5 N-channel 650 V, 0.335 Ω typ., 10 A MDmesh V Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features Order code VDSS RDS on max ID STL15N65M5 710 V < 0.375 Ω 10 A(1) 1. The value is rated according to Rthj-case and limited by

Contextual Info: STL2N80K5 N-channel 800 V, 3.7 Ω typ., 2 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV Datasheet - preliminary data Features Order code VDS RDS on max. ID STL2N80K5 800 V 4.9 Ω 2A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)