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    STMICROELECTRONICS DATE CODE DPAK Search Results

    STMICROELECTRONICS DATE CODE DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK5R1P08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Datasheet
    TK6R9P08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Datasheet
    TC4511BP
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Datasheet
    68305-001LF
    Amphenol Communications Solutions Din Accessory Coding PDF
    65197-001LF
    Amphenol Communications Solutions Din Accessory Coding Part PDF

    STMICROELECTRONICS DATE CODE DPAK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STMicroelectronics DPAK Marking CODE

    Abstract: STMicroelectronics Date Code DPAK Date Code Marking STMicroelectronics PACKAGE DPAK INFINEON PART MARKING DPAK STMicroelectronics DPAK marking code date how to identify dpak ecopack outgoing qc ST Microelectronics KF33BDT-TR LD1117DT
    Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG-COM/03/391 Products in DPAK, PPAK, D2PAK, P2PAK packages:Lead free component connections 2003/12/11 PCN DSG-COM/03/391 Product Family /Commercial Product DPAK,PPAK,P2PAK,D2PAK for V.R. devices Type Of Change Package assembly process change


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    dsg-com/03/391stmicroelectronics dpak marking codestmicroelectronics date code dpakdate code marking stmicroelectronics package dpak+7infineon part marking dpakstmicroelectronics dpak marking code datehow to identify dpakecopackoutgoing qc st microelectronicskf33bdt-trld1117dt PDF

    STMicroelectronics Date Code DPAK

    Contextual Info: STGD6NC60H N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD6NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT


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    stgd6nc60hstgd6nc60ht4stmicroelectronics date code dpak PDF

    STMicroelectronics Date Code DPAK

    Abstract: ic MARKING QG STGD3NC60H
    Contextual Info: STGD3NC60H N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD3NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT


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    stgd3nc60hstgd3nc60ht4stmicroelectronics date code dpakic marking qg PDF

    ic MARKING QG

    Abstract: GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE
    Contextual Info: STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD6NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)


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    stgd6nc60hdstgd6nc60hdt4ic marking qggd6nc60hd+1stmicroelectronics dpak marking code PDF

    ic MARKING QG

    Abstract: STGD3NC60HD
    Contextual Info: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)


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    stgd3nc60hdstgd3nc60hdt4ic marking qg PDF

    GD5NB120SZ

    Abstract: STGD5NB120SZT4 SCHEMATIC igbt dimmer STGD5NB120SZ gd5n dimmer diagrams IGBT STGD5NB120SZ-1 marking c2 diode gd5nb
    Contextual Info: STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat IC STGD5NB120SZ STGD5NB120SZ-1 1200 V 1200 V < 2.0 V < 2.0 V 5A 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE


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    stgd5nb120sz-1stgd5nb120szgd5nb120szstgd5nb120szt4+5schematic igbt dimmergd5ndimmer diagrams igbtmarking c2 diodegd5nb PDF

    STGD3NC60H

    Abstract: STMicroelectronics Date Code DPAK
    Contextual Info: STGD3NC60H N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE VCES STGD3NC60HT4 • ■ ■ ■ ■ 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT


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    stgd3nc60hstgd3nc60ht4stmicroelectronics date code dpak PDF

    STD40NF10

    Abstract: D40NF
    Contextual Info: STD40NF10 N-channel 100 V, 0.025 Ω, 50 A DPAK low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STD40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 DPAK Application


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    std40nf10d40nf PDF

    ic 4510

    Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
    Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 3 1 High ruggedness electronic ignition for small


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    st901tstd901to-220ic 4510+64510901thigh voltage npn darlingtonst901automotive ignitionst tab 060 PDF

    GP7NC60H

    Abstract: TO-220 footprint STMicroelectronics Date Code DPAK STMicroelectronics to-220 date code STGP7NC60H D7NC60H STGD7NC60H STGD7NC60HT4 TO252-DPAK STMicroelectronics date code to-220
    Contextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)


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    stgp7nc60hstgd7nc60ho-220/dpakstgd7nc60ht4+7gp7nc60hto-220 footprintstmicroelectronics date code dpakstmicroelectronics to-220 date coded7nc60hto252-dpakstmicroelectronics date code to-220 PDF

    STMicroelectronics Date Code DPAK

    Contextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)


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    stgp7nc60hstgd7nc60ho-220/dpakstgd7nc60ht4+1stmicroelectronics date code dpak PDF

    STGD7NC60H

    Abstract: GP7NC60H STGD7NC60HT4 STGP7NC60H STMicroelectronics date code TO-220
    Contextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 7A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)


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    stgp7nc60hstgd7nc60ho-220/dpakstgd7nc60ht4+2gp7nc60hstmicroelectronics date code to-220 PDF

    Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small


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    st901tstd901to-220 PDF

    JESD97

    Abstract: MJD31C MJD32C MJD32CT4
    Contextual Info: MJD32C Low voltage PNP power transistor Features • NPN type is MJD31C ■ Surface-mounting TO-252 power package in tape & reel Applications ■ 3 1 General purpose switching and amplifier Description DPAK TO-252 The device is manufactured in Planar technology


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    mjd32cmjd31co-252mjd32ct4+1jesd97 PDF

    Contextual Info: STD1802 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK TO-252 power package in tape & reel (suffix “T4)


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    std1802o-252 PDF

    d25nf

    Abstract: d25nf10l D25NF10LA d25nf10
    Contextual Info: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications


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    std25nf10lad25nfd25nf10ld25nf10la+1d25nf10 PDF

    7662

    Contextual Info: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■


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    std35nf06lstd35nf06lt47662 PDF

    MJD31C

    Abstract: MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK
    Contextual Info: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    mjd31ct4-ao-252mjd32cmjd31c+1date code marking stmicroelectronics package dpak PDF

    MJD31C

    Abstract: MJD31CT4 MJD32C
    Contextual Info: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology


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    mjd31co-252mjd32cmjd31ct4 PDF

    MJD31C

    Abstract: MJD32C MJD32CT4-A
    Contextual Info: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    mjd32ct4-ao-252mjd31cmjd32c PDF

    STGD3NC60HD

    Contextual Info: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)


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    stgd3nc60hdstgd3nc60hdt4 PDF

    STD65N55F3

    Contextual Info: STD65N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK STripFET Power MOSFET Features Type VDSS RDS on ID Pw STD65N55F3 55V <8.5mΩ 80A 110W • Standard threshold drive ■ 100% avalanche tested 3 1 DPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of


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    std65n55f3 PDF

    D1802

    Abstract: transistor d1802 STD1802 d1802 transistor transistor d1802 dpak JESD97 STD1802T4 D-PAK st 833 TRANSISTOR T4 ST
    Contextual Info: STD1802 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK TO-252 power package in tape & reel (suffix “T4)


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    std1802o-252d1802transistor d1802+7d1802 transistortransistor d1802 dpakjesd97std1802t4d-pakst 833transistor t4 st PDF

    13473

    Abstract: MJD31C MJD31CT4-A MJD32C
    Contextual Info: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching


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    mjd31ct4-ao-252mjd32cmjd31c+113473 PDF