STMICROELECTRONICS DATE CODE DPAK Search Results
STMICROELECTRONICS DATE CODE DPAK Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TK5R1P08QM | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK | Datasheet | ||
| TK6R9P08QM | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK | Datasheet | ||
| TC4511BP | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 | Datasheet | ||
| 68305-001LF | Amphenol Communications Solutions | Din Accessory Coding | |||
| 65197-001LF | Amphenol Communications Solutions | Din Accessory Coding Part |
STMICROELECTRONICS DATE CODE DPAK Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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STMicroelectronics DPAK Marking CODE
Abstract: STMicroelectronics Date Code DPAK Date Code Marking STMicroelectronics PACKAGE DPAK INFINEON PART MARKING DPAK STMicroelectronics DPAK marking code date how to identify dpak ecopack outgoing qc ST Microelectronics KF33BDT-TR LD1117DT
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dsg-com/03/391stmicroelectronics dpak marking codestmicroelectronics date code dpakdate code marking stmicroelectronics package dpak+7 | |
STMicroelectronics Date Code DPAKContextual Info: STGD6NC60H N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD6NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT |
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stgd6nc60hstgd6nc60ht4stmicroelectronics date code dpak | |
STMicroelectronics Date Code DPAK
Abstract: ic MARKING QG STGD3NC60H
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stgd3nc60hstgd3nc60ht4stmicroelectronics date code dpakic marking qg | |
ic MARKING QG
Abstract: GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE
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stgd6nc60hdstgd6nc60hdt4ic marking qggd6nc60hd+1 | |
ic MARKING QG
Abstract: STGD3NC60HD
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stgd3nc60hdstgd3nc60hdt4ic marking qg | |
GD5NB120SZ
Abstract: STGD5NB120SZT4 SCHEMATIC igbt dimmer STGD5NB120SZ gd5n dimmer diagrams IGBT STGD5NB120SZ-1 marking c2 diode gd5nb
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stgd5nb120sz-1stgd5nb120szgd5nb120szstgd5nb120szt4+5 | |
STGD3NC60H
Abstract: STMicroelectronics Date Code DPAK
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stgd3nc60hstgd3nc60ht4stmicroelectronics date code dpak | |
STD40NF10
Abstract: D40NF
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std40nf10d40nf | |
ic 4510
Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
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st901tstd901to-220ic 4510+6 | |
GP7NC60H
Abstract: TO-220 footprint STMicroelectronics Date Code DPAK STMicroelectronics to-220 date code STGP7NC60H D7NC60H STGD7NC60H STGD7NC60HT4 TO252-DPAK STMicroelectronics date code to-220
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stgp7nc60hstgd7nc60ho-220/dpakstgd7nc60ht4+7 | |
STMicroelectronics Date Code DPAKContextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat) |
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stgp7nc60hstgd7nc60ho-220/dpakstgd7nc60ht4+1 | |
STGD7NC60H
Abstract: GP7NC60H STGD7NC60HT4 STGP7NC60H STMicroelectronics date code TO-220
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stgp7nc60hstgd7nc60ho-220/dpakstgd7nc60ht4+2 | |
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Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small |
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st901tstd901to-220 | |
JESD97
Abstract: MJD31C MJD32C MJD32CT4
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mjd32cmjd31co-252mjd32ct4+1 | |
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Contextual Info: STD1802 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK TO-252 power package in tape & reel (suffix “T4) |
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std1802o-252 | |
d25nf
Abstract: d25nf10l D25NF10LA d25nf10
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std25nf10lad25nfd25nf10ld25nf10la+1 | |
7662Contextual Info: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■ |
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std35nf06lstd35nf06lt47662 | |
MJD31C
Abstract: MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK
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mjd31ct4-ao-252mjd32cmjd31c+1 | |
MJD31C
Abstract: MJD31CT4 MJD32C
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mjd31co-252mjd32cmjd31ct4 | |
MJD31C
Abstract: MJD32C MJD32CT4-A
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mjd32ct4-ao-252mjd31cmjd32c | |
STGD3NC60HDContextual Info: STGD3NC60HD N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD3NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) |
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stgd3nc60hdstgd3nc60hdt4 | |
STD65N55F3Contextual Info: STD65N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK STripFET Power MOSFET Features Type VDSS RDS on ID Pw STD65N55F3 55V <8.5mΩ 80A 110W • Standard threshold drive ■ 100% avalanche tested 3 1 DPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of |
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std65n55f3 | |
D1802
Abstract: transistor d1802 STD1802 d1802 transistor transistor d1802 dpak JESD97 STD1802T4 D-PAK st 833 TRANSISTOR T4 ST
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std1802o-252d1802transistor d1802+7 | |
13473
Abstract: MJD31C MJD31CT4-A MJD32C
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mjd31ct4-ao-252mjd32cmjd31c+1 | |