STMICROELECTRONICS CODE DATE MARKING D 2PAK Search Results

STGD7NC60H

Abstract: GP7NC60H STGD7NC60HT4 STGP7NC60H STMicroelectronics date code TO-220
Contextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 7A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)

300NH02L

Contextual Info: STH300NH02L-6 N-channel 24 V, 0.95 mΩ, 180 A, H²PAK-6 STripFET Power MOSFET Features Order code VDSS RDS on max. ID (1) STH300NH02L-6 24 V < 1.2 mΩ 180 A TAB 1. Current limited by package 6 • Conduction losses reduced ■ Low profile, very low parasitic inductance, high

STH240N75F3-6

Contextual Info: STH240N75F3-6 N-channel 75 V, 2.6 mΩ, 180 A, H²PAK STripFET III Power MOSFET Features Order code VDSS RDS on max. ID STH240N75F3-6 75 V < 3.0 mΩ 180 A • Conduction losses reduced ■ Low profile, very low parasitic inductance 7 1 Applications ■

Gf7NC60HD

Abstract: STMicroelectronics date marking on D 2pak STGF7NC60HD
Contextual Info: STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V < 2.5 V < 2.5 V

210N75F6

Contextual Info: STH210N75F6-2 N-channel 75 V, 0.0022 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH210N75F6-2 75 V < 0.0028 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

GP7NC60HD

Abstract: GF7NC60HD gp7nc60 STGB7NC60HDT STGB7NC60HD STGB7NC60HDT4 STGF7NC60HD STGP7NC60HD gf7nc GP7NC60H
Contextual Info: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C

GP7NC60HD

Abstract: GF7NC60HD GP7NC60H GF7NC60 gp7nc60 GB7NC60HD STGF7NC60HD STGP7NC60HD gf7nc ST T4 1060
Contextual Info: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C

GP7NC60HD

Abstract: STGP7NC60HD GP7NC60H GF7NC60HD STGB7NC60HDT4 STGF7NC60HD STGB7NC60HD gp7nc60
Contextual Info: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C

T2035H

Abstract: T2035H-600G T2035H-600G-TR T2035H-600TRG T2035H triac
Contextual Info: T2035H Series Snubberless high temperature 20 A Triacs Main features Symbol Value Unit IT RMS 20 A VDRM/VRRM 600 V IGT (Q1) 35 mA Tj MAX 150 °C A2 G G A1 A2 Description D2PAK T2035H-G Specifically designed to operate at 150° C, the new 20 A T2035H Triacs provide an enhanced

31N65M5

Abstract: STF31N65M5 STP31N65M5 stw31n65 STW31N65M5
Contextual Info: STx31N65M5 N-channel 650 V, 0.124 Ω, 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Preliminary data Features Order code TAB VDSS @ TJmax RDS on max 2 ID 3 1 D2PAK STB31N65M5 3 TAB 1 TO-220FP STF31N65M5 STFI31N65M5

34N65M5

Abstract: STB-34 stb34
Contextual Info: STx34N65M5 N-channel 650 V, 0.098 Ω, 29 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Preliminary data Features Order code TAB VDSS @ TJmax RDS on max 2 ID 3 1 D2PAK STB34N65M5 3 TAB 1 TO-220FP STF34N65M5 STFI34N65M5

15N65M5

Abstract: STF15N65 15N65 STFI15N65M5 STP15N65M5 STMicroelectronics marking code date diode STB15N65M5
Contextual Info: STB15N65M5, STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 Ω, 11 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP and TO-220 packages Datasheet — production data Features Order code TAB VDSS @ TJmax RDS on max 2 ID 3 1 STB15N65M5 STF15N65M5

STTH8L06D

Abstract: STTH8L06FP F 20UP 200 STTH8L06 STTH8L06DI STTH8L06DIRG STTH8L06G STTH8L06G-TR
Contextual Info: STTH8L06 Turbo 2 ultrafast high voltage rectifier Main product characteristics IF AV K 8A VRRM 600 V IR (max) 200 µA Tj 175° C VF (typ) 0.85 V trr (typ) 75 ns K A A TO-220AC STTH8L06D K TO-220FPAC STTH8L06FP K Features and benefits A • Ultrafast switching

Contextual Info: STFI20NM65N N-channel 650 V, 15 A, 0.250 Ω typ., MDmesh II Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code VDSS @Tjmax RDS on max. ID STFI20NM65N 710 V 0.270 Ω 15 A • 100% avalanche tested • Low input capacitance and gate charge

TN1205H

Abstract: TN1205H6T TN1205H-6T
Contextual Info: TN1205H High temperature 12 A SCRs Features • Medium current SCRs ■ High static and dynamic commutation ■ RoHS 2002/95/EC compliant ■ 600 V VDRM / VRRM ■ A G K A A 150 °C max. Tj turn-off capability Application K A K G ■ General purpose AC line load switching

18n65m5

Abstract: STB18N65M5
Contextual Info: STB18N65M5, STD18N65M5 STF18N65M5, STP18N65M5 N-channel 650 V, 0.198 Ω, 15 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features Order code TAB VDSS @ TJmax RDS on max 2 ID STF18N65M5 710 V 2 3 3 1 1 D2PAK STB18N65M5

Contextual Info: TN1205H High temperature 12 A SCRs Datasheet − production data Features • High junction temperature: Tj = 150 °C ■ Medium current SCRs ■ High noise immunity up to 150 °C ■ RoHS 2002/95/EC compliant A G K A A ■ 600 V VDRM, VRRM Application K A

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet − production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ K K A A K TO-220AC STPSC6H065D High forward surge capability

TN1205H-6T

Abstract: TN1205H-6G TN1205 Date Code Marking STMicroelectronics D Pak
Contextual Info: TN1205H High temperature 12 A SCRs Datasheet − production data Features • High junction temperature: Tj = 150 °C ■ Medium current SCRs ■ High noise immunity up to 150 °C ■ RoHS 2002/95/EC compliant A G K A A ■ 600 V VDRM, VRRM Application K A

ac motor triac bta16

Abstract: bta16 circuit triac btb16 TRIAC BTA 28 TRIAC BTA-SERIES TRIAC BTB 16 600 tube T1635 BTB16 T1610 BTA16 3000 w
Contextual Info: BTA16, BTB16 T1610, T1635 16 A Snubberless , logic level and standard TRIACs Features A2 • Medium current TRIACs ■ Low thermal resistance with clip bonding ■ Low thermal resistance insulation ceramic for insulated BTA ■ High commutation 4Q or very high

BTA12

Abstract: triac bta12 800 triggering BTA12 600V triac bta12 triggering triac bt 136 T1210-800G Triac BTB12 600 B T12xx BTA12 Series T1250
Contextual Info: BTA12, BTB12, T12xx 12 A Snubberless , logic level and standard triacs Features A2 • Medium current triac ■ Low thermal resistance with clip bonding ■ Low thermal resistance insulation ceramic for insulated BTA ■ G A1 A2 A2 High commutation 4Q or very high

Contextual Info: T1635H, T1650H High temperature 16 A Snubberless Triacs Datasheet - production data Applications A2 Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 16 A Triacs provide a very high

STH270N4F3-6

Abstract: sth270n4f3 270N4F3
Contextual Info: STH270N4F3-6 N-channel 40 V, 1.40 mΩ, 180 A, H2PAK STripFET III Power MOSFET Features Type VDSS RDS on ID (1) STH270N4F3-6 40 V < 1.7 mΩ 180 A TAB 1. Current limited by package • Conduction losses reduced ■ Low profile, very low parasitic inductance, high

Contextual Info: STPS8H100 High voltage power Schottky rectifier Datasheet - production data Description Schottky barrier rectifier designed for high frequency compact switched mode power supplies such as adaptators and on board DC/DC converters. K A NC D2PAK STPS8H100G Table 1. Device summary