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    STGWT80V60DF Search Results

    STGWT80V60DF Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STGWT80V60DF
    		STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 120A 469W TO-3P Original PDF 18
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    STGWT80V60DF Price and Stock

    STMicroelectronics

    STMicroelectronics STGWT80V60DF

    IGBT TRENCH FS 600V 120A TO-3P
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    STMicroelectronics STGWT80V60DF 25 1
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    TME STGWT80V60DF 1
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    Avnet Silica STGWT80V60DF 33 Weeks 300
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    STMicroelectronics STGWT80V60DF (V)

    Igbt, Single, 600V, 120A, To-3P; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:469W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGWT80V60DF
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    Newark STGWT80V60DF (V) Bulk 40 1
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    STGWT80V60DF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution


    Original     		STGW80V60DF STGWT80V60DF O-247 DocID024362 PDF

    GW80V60DF

    Abstract: STGW80V60DF fieldstop igbt
    Contextual Info: STGW80V60DF STGWT80V60DF 600 V, 80 A very high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  Very high speed switching series  Tail-less switching off 2 3 3 2 1 1 TO-247  Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original     		STGW80V60DF STGWT80V60DF O-247 DocID024362 GW80V60DF fieldstop igbt PDF