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    STGWT40H65DFB Search Results

    STGWT40H65DFB Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STGWT40H65DFB
    STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 283W TO3P-3L Original PDF 17
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    STGWT40H65DFB Price and Stock

    STMicroelectronics

    STMicroelectronics STGWT40H65DFB

    IGBT TRENCH FS 650V 80A TO-3P
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    STMicroelectronics STGWT40H65DFB (650V HB)

    Igbt, Single, 650V, 80A, To-3P; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:283W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGWT40H65DFB
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    Newark STGWT40H65DFB (650V HB) Bulk 32 1
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    STGWT40H65DFB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original
    STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363 PDF

    Contextual Info: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original
    STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363 PDF

    Contextual Info: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original
    STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363 PDF

    STGW40H65DFB

    Abstract: GWT40H65DFB
    Contextual Info: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2 3 3 2 1 TO-247 1  Very low saturation voltage: VCE sat = 1.65 V


    Original
    STGW40H65DFB STGWT40H65DFB O-247 DocID024363 GWT40H65DFB PDF