STD16 Search Results

STD16NE10L

Contextual Info: STD16NE10L N-CHANNEL 100V - 0.07 Ω - 16A DPAK STripFET POWER MOSFET TYPE STD16NE10L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.10 Ω 16 A TYPICAL RDS(on) = 0.07 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE

ST16NE06

Abstract: STD16NE06L-1 STD16NE06L1
Contextual Info: STD16NE06L-1 N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET " POWER MOSFET PRELIMINARY DATA TYPE STD16NE06L-1 • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.085 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

STD16NE10

Contextual Info: STD16NE10 N - CHANNEL 100V - 0.07ft - 16A - IPAK/DPAK STripFET MOSFET TYP E V STD 16N E10 dss 100 V R d S o ii Id < 0.1 Q. 16 A . • TYPICAL RDS(on) =0.07 £2 EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

10003 NPN

Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
Contextual Info: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

STB1132

Abstract: STD1664
Contextual Info: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664

STD1664

Abstract: Transistor STB1132 a2 sot-89
Contextual Info: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

TO-252 MOSFET

Abstract: std16ne06l
Contextual Info: STD16NE06L N-CHANNEL 60V - 0.06Ω - 16A TO-252 STripFET POWER MOSFET PRELIMINARY DATA TYPE STD16NE06L • ■ ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.07Ω 16 A TYPICAL RDS(on) = 0.06Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE

STD16NE06

Contextual Info: STD16NE06 N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET POWER MOSFET TYPE STD16NE06 V DSS R DS on ID 60 V < 0.085 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER

Contextual Info: STD16NE10L N-CHANNEL 100V - 0.07 Ω - 16A DPAK STripFET POWER MOSFET TYPE STD16NE10L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.10 Ω 16 A TYPICAL RDS(on) = 0.07 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE

STD16NF06L

Contextual Info: STD16NF06L N-CHANNEL 60V - 0.060 Ω - 16A DPAK STripFET II POWER MOSFET Table 1: General Features TYPE STD16NF06L • ■ ■ ■ ■ Figure 1:Package VDSS RDS on ID 60 V < 0.070 Ω 16 A TYPICAL RDS(on) = 0.060 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

STP-16nf25

Abstract: STP16NF25
Contextual Info: STD16NF25, STF16NF25, STP16NF25 N-channel 250 V, 0.195 Ω, 14 A STripFET II Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet − production data Features TAB TAB Order codes 3 1 3 1 DPAK RDS on max STD16NF25 STF16NF25 2 VDS PTOT 14 A 250 V

D16NF06L

Abstract: JESD97 STD16NF06L STD16NF06L-1 STD16NF06LT4
Contextual Info: STD16NF06L STD16NF06L-1 N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD16NF06L-1 60V <0.070Ω 24A STD16NF06L 60V <0.070Ω 24A • Logic level device ■ Low threshold drive 3 3 2 1 iPAK 1 DPAK

16nf25

Abstract: JESD97 STD16NF25 STF16NF25 STP16NF25 072 0043 STP-16nf25
Contextual Info: STD16NF25 STF16NF25 - STP16NF25 N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID Pw STD16NF25 250V <0.235Ω 13A 90W STF16NF25 250V <0.235Ω 13A(1) 25W STP16NF25 250V <0.235Ω

Contextual Info: STD1664 NPN Silicon Transistor PIN Connection Description • Medium power am plifier applicat ion Features • PC Collect or pow er dissipat ion = 1W ( Ceram ic subst at e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = 0.15V( Typ.)

D16NF06L

Abstract: STD16NF06L STD16NF06L-1 STD16NF06LT4
Contextual Info: STD16NF06L N-CHANNEL 60V - 0.060 Ω - 24A DPAK/IPAK STripFET II POWER MOSFET Table 1: General Features TYPE STD16NF06L • ■ ■ ■ Figure 1:Package VDSS RDS on ID 60 V < 0.070 Ω 24 A TYPICAL RDS(on) = 0.060 Ω LOGIC LEVEL DEVICE THROUGH-HOLE IPAK (TO-251) POWER

STD16NE06L

Contextual Info: STD16NE06L N-CHANNEL 60V - 0.06 Ω - 16A DPAK STripFET POWER MOSFET TYPE STD16NE6L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.07 Ω 16 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE

st16ne06

Contextual Info: STD16NE06L-1 N - CHANNEL 60V - 0.07 £2 - 16A - TO-251 _ STripFET " POWER MOSFET PRELIMINARY DATA TYPE STD1 6NE06L-1 • . . . . V dss R dS oii Id 60 V < 0.085 Q. 16 A TYPICAL R D S ( o n ) = 0.07 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

16n65m5

Abstract: STD16N65M5 STP16N65M5 STF16N65M5 STU16N65M5 STx16N65M5 STP16N65 stp16
Contextual Info: STD16N65M5, STF16N65M5 STP16N65M5, STU16N65M5 N-channel 650 V, 0.270 Ω, 12 A MDmesh V Power MOSFET DPAK, TO-220FP, TO-220, IPAK Features VDSS @ TJmax RDS on max ID STD16N65M5 710 V < 0.299 Ω 12 A STF16N65M5 710 V < 0.299 Ω 12 A STP16N65M5 710 V < 0.299 Ω

Contextual Info: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664

dc-acconverters

Abstract: d16ne S1737 STD16NE10
Contextual Info: STD16NE10  N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK STripFET MOSFET TYPE ST D16NE10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.1 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STD16N65M5

Abstract: STB16N65M5
Contextual Info: STB16N65M5 STD16N65M5 N-channel 650 V, 0.270 Ω, 12 A MDmesh V Power MOSFET in D²PAK, DPAK Features Type VDSS @ TJmax RDS on max. ID 710 V < 0.299 Ω 12 A STB16N65M5 STD16N65M5 3 3 1 1 • DPAK worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability

D16NE10L

Abstract: JESD97 STD16NE10L STD16NE10LT4
Contextual Info: STD16NE10L N-channel 100V - 0.07Ω - 16A - DPAK STripFET Power MOSFET General features Type VDSSS RDS on ID STD16NE10L 100V <0.10Ω 16A 3 • Avalanche rugged technology ■ Low gate charge ■ High current capability ■ 175°C operating temperature

STB1132

Abstract: Transistor STD1664 a1 sot-89
Contextual Info: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664

D16NE06

Abstract: D16NE06L ST16NE06 STD16NE06L-1
Contextual Info: STD16NE06L-1  N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET ” POWER MOSFET PRELIMINARY DATA T YPE ST D16NE06L-1 • ■ ■ ■ ■ V DSS R DS o n ID 60 V < 0.085 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED