STATIC RAM 64K Search Results

Contextual Info: ^EDI EDI8F1664C 64Kx16 SRAM Module ELECTRONIC DESIGNS, INC 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module

Contextual Info: e x _ EDI8F3265C ELECTRONIC DESIGNS INC. High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed 64Kx32 bit CMOS Static

Contextual Info: _ EDI8F2464C m o i Electronic Designs Inc.1 High Speed 1.5 Megabit SRAM Module 64Kx24 Static RAM CMOS; High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM module organized as 64Kx24. This module is 64Kx24 bit CMOS Static

static ram 64kx8

Abstract: EDI8M864C
Contextual Info: 23EDI EDI8M864C Electronic D«tigna Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory carriers mounted on a multi-layered ceramic substrate.

Contextual Info: 256K CMOS STATIC RAM MODULE lnT7iJCCC, i d t ?M656L FEATURES: DESCRIPTION: • High-density 256K-blt CMOS static RAM module The IDT7M656 is a 256K-bit high-speed CMOS static RAM con­ structed on a multilayered ceram ic substrate using 16 IDT6167 16Kx1 static RAMs in leadless chip carriers. Making 4 chip select

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: ZEDl EDI8F3264C Electronic 0*»lçr* inc.* High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3264C is a high speed 2 megabit Static RAM module organized as 64Kx 32. This module is constructed 64Kx32 bit CMOS Static

Contextual Info: L7C187 64K x 1 Static RAM Features_ Description_ □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 65,536 words by 1 bit

Contextual Info: moi EDI8F1664C100/120/150 Megabit SRAM Module, JEDEC Pinout 64KX16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module. The module consists of four 4 32Kx8 CMOS Static RAMs in plastic small outline packages, surface mounted onto an epoxy laminate (FR-4)

Contextual Info: WD\ EDI8F3265C ELECTRONIC DESIGNS INC. • High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an

Contextual Info: •EDI EDI8908C35/45/55 High Speed 64K Monolithic SRAM 8Kx9 Static RAM CMOS, High Speed Monolithic Features The EDI8908C is a high performance, low power CMOS 64Kbit CMOS Static Static RAM organized as 8192 words by 9 bits each. In Random Access Memory • Access Times 35,45, and 55ns

Contextual Info: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and

Contextual Info: Iniegrared DeviceTec hn olo^y Jnt 2 MEGABIT 64K x 32 CM O S STATIC RAM MO DULE ADVANCE INFORMATION IDT7M4017 The IDT7M 4017isa2 megabit (64Kx 32) high-speed static RAM module constructed on a co-fired ceramic substrate using eight IDT71256 32K x 8 static RAMs in leadless chip carriers. On-board

Contextual Info: LOGIC DEVICES INC StnE D • SSkSICIS GOOlOSä b ■ _ 64Kx 4 Static RAM FEATURES □ 64K x 4 Static RAM with Separate I/O , Transparent Write L7C191 , or High Impedance Write (L7C192) □ Auto-Powerdown* Design □ Advanced CMOS Technology

Contextual Info: BiCMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61B298 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 BiCEMOS Static RAM • High-speed address / chip select time — Commercial: 12/15/20ns — Military: 15/20ns • Output Enable

Contextual Info: EbE D LOGIC DEVICES INC WÈ SSbSTQS O O O I H G LMM624 1 Megabit 64K x 16-bit Static RAM Module DESCRIPTION FEATURES □ IM egabit (64K x 16-bit) Static RAM M odule □ Utilizes 16 L7C187 64K x 1 Static RAMs □ A dvanced CMOS Technology Q H igh Speed, Low Pow er

SC1006

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61298SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (O E) pin available for added system flexibility • High speed (equal access and cycle times)

ZMD AG

Contextual Info: Preliminary UL62H1616B Low Voltage Automotive Fast 64K x 16 SRAM Features Description ! 65536 x 16 bit static CMOS RAM ! 15, 20 and 35 ns Access Time ! Common data inputs and The UL62H1616B is a static RAM manufactured using a CMOS process technology with the following

Contextual Info: ISSI IS61LV6432_ 64Kx 32 SYNCHRONOUS PIPELINE STATIC RAM FEATURES DESCRIPTION • Internal self-timed write cycle The IS S IIS61LV6432 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium , 680X0™,

Contextual Info: ^E D I _ EDI8464C Etoctionte P w lqn» Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C isahigh performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.

Contextual Info: m u EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed O iF û l^ i T lû lM Static RAM Features The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array.

Contextual Info: BiCMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61B298SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 advanced high-speed BiCMOS static RAM • Equal access and cycle times — Commercial: 10/12/15ns • One Chip Select plus one Output Enable pin

Contextual Info: PDM41258SA PDM41258LA PARADIGM' 256K Static RAM 64K x 4-Bit Features Description □ High speed access times Com'l: 8,10,12,15, 20 and 25 ns Ind'l: 10,12,15, 20 and 25 ns The PDM41258 is a high-performance CMOS static RAM organized as 65,536 x4 bits. This product is

Contextual Info: Paradigm' PRELIMINARY PDM21532 64K x 16 CMOS 2.7V Static RAM Features Description □ The PDM21532 is a high-performance CMOS static RAM organized as 65,536 x 16 bits. The PDM21532 features low power dissipation using chip enable CE and has an output enable input (OE) for fast