STATIC RAM 2015 Search Results

Contextual Info: CY7C1062DV33 16-Mbit 512 K x 32 Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power

cy7c1019d-10

Contextual Info: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

Contextual Info: CY7C1062DV33 16-Mbit 512 K x 32 Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power

Contextual Info: CY7C199D 256-Kbit 32 K x 8 Static RAM 256-Kbit (32 K × 8) Static RAM Features Functional Description • Temperature range ❐ –40 °C to 85 °C The CY7C199D is a high performance CMOS static RAM organized as 32,768 words by 8-bits. Easy memory expansion is

cy7c1041dv

Abstract: 10bv CY7C1041DV33
Contextual Info: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits. To write to the device, take

CY7C1061DV33-10BV1XI

Abstract: cy7c1061dv33 10bv BV1X BVJ 47
Contextual Info: CY7C1061DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz

BVJ 47

Abstract: CY7C1061DV33-10BV1XI CY7C1061
Contextual Info: CY7C1061DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz

Contextual Info: CY7C1069DV33 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069DV33 is a high performance CMOS Static RAM organized as 2,097,152 words by 8 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz

CY62148E

Abstract: CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Abstract: CY62148ELL-45ZSXI CY62148B CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

cy7c1019dv

Contextual Info: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

Contextual Info: CY7C1018DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1018CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

CY7C1018

Contextual Info: CY7C1018DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1018CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

cy7c199d

Abstract: cypress AN1064 sram system guidelines
Contextual Info: CY7C199D 256 K 32 K x 8 Static RAM 256 K (32 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ –40 °C to 85 °C ■ Pin and function compatible with CY7C199C ■ High speed ❐ tAA ■ = 10 ns Low active power ❐ ICC ■

Contextual Info: CY7C1049D 4-Mbit 512 K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1049B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 90 mA at 10 ns ■ Low CMOS Standby power ❐ ISB2 = 10 mA The CY7C1049D is a high-performance CMOS static RAM

cyc1049

Abstract: CY7C1049D-10VXI 512KX8 CY7C104
Contextual Info: CY7C1049D 4-Mbit 512 K x 8 Static RAM Features Functional Description[1] • Pin- and function-compatible with CY7C1049B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 90 mA at 10 ns ■ Low CMOS Standby power ❐ ISB2 = 10 mA The CY7C1049D is a high-performance CMOS static RAM

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B ■ High speed The CY7C107D and CY7C1007D are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy

Contextual Info: CY7C1021DV33 1-Mbit 64 K x 16 Static RAM Features Functional Description[1] • Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin-and function-compatible with CY7C1021CV33 The CY7C1021DV33 is a high-performance CMOS static

Contextual Info: t> rij 005403 D p m DPS8808, DPS8808A 8K 8 Dense-Pac Microsystems, Inc. CM OS SRAM X DESCRIPTION: The DPS8808 A>85, -120, -150, -200 is an 8K by 8 bit high speed static RAM constructed on a ceramic substrate using 4 DP6116 (2,048 x 8 static RAMs in leadless chip carriers Functional

static ram 2015

Contextual Info: fax id: 2015 CYM1838 128K x 32 Static RAM Module a multilayer ceramic substrate. Four chip selects CS2, C 53, CS4 are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combination of multiple bytes through proper use of selects.

BCX32

Contextual Info: fax id: 2015 CYM1838 128K x 32 Static RAM Module a multilayer ceramic substrate. Four chip selects CS2, C 53, CS4 are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combination of multiple bytes through proper use of selects.

Contextual Info: IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 12 mW typical operating 4 µW (typical) CMOS standby • TTL compatible interface levels

Contextual Info: fax id: 2015 W CYPRESS PRELIMINARY CYM1838 128K x 32 Static RAM Module a multilayer ceramic substrate. Four chip selects CS-|, CS2, CS3, CS4 are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combination of multiple bytes through proper use of selects.

AN1064

Abstract: CY62147EV18 CY62147EV18LL CY62147DV18
Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA