STAC244F Search Results

STAC3932F

Abstract: RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v
Contextual Info: STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European

STAC244

Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
Contextual Info: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider

Contextual Info: STAC2942F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

FERRITE TOROID

Abstract: ST406 measure current toroid 200 pF air variable capacitor
Contextual Info: STAC2932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

Contextual Info: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

STAC2942F

Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
Contextual Info: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

STAC2942F

Abstract: FERRITE TOROID 43 toroid core stac2942
Contextual Info: STAC2942F RF power transistor HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

STAC4932

Abstract: STAC4932F st marking code STAC244F 1715
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

MEC 1300

Abstract: 2x100mA STAC244F
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

SD2942

Abstract: PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E
Contextual Info: Radio frequency technologies for innovative solutions Selection guide December 2009 www.st.com/rf DMOS ISM & FM broadcast applications Part number Frequency MHz Pout (W) VDD (V) Gain (dB) Efficiency (%) Package SD2900 400 5 28 13.5 45 M113 SD2902 400 15

STAC4932

Abstract: STAC4932B
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

STAC2932

Abstract: STAC244F 206F
Contextual Info: STAC2932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European