STA 474 A Search Results

Contextual Info: YSYI • • • JOHANSON DiLi©T^D gÌ The X5R M LC series offers circuit designers a p ow erful co m b in a tion o f high capacitance, sta ble tem perature p erform an ce, a nd m in iatu re size. The very lo w ESR characteristics make them a g o o d choice over tantalum

SM 933

Contextual Info: M U LTILA Y E R CERAM IC CHIP CAPACITORS • INTRODUCTION The Multilayer Ceram ic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceram ic dielectric materials and firing into a concrete monolithic body, then com pleted by

capa 1206

Abstract: IC M 224
Contextual Info: Tm JOHANSON MemoryGUARD Surface Mount Chip Capacitors DESCRIPTION Johanson D ie le c tr ic s h a s d e v e lo p e d th e M e m o ry G U A R D ® s e rie s o f low p ro file Z 5U ceram ic chip capacitors specifically for m em ory de-coupling applications. These capacitors are

se 336

Contextual Info: KOA TANTALUM C H IP CAPA C IT O R TMC SPEER ELECTRONICS, INC. TANTALUM CHIP CAPACITOR Epoxy Molded Body, UL94V-0 Flamm ability EIA - US and EIA - Japan Compatible Sizes 100% Burn-in and End-of-Line Testing Extended Values Per Case Size Excellent Humidity and Solder Resistance

Contextual Info: A/D and D/A CONVERTERS AN6869 AN6869 High-Speed 10-bit D /A Converter • Outline Unit : mm T he AN6869 is a high-speed and low power dissipation 10-bit bipolar IC suitable for D /A conversion up to video signal band. ■ Features • 10-bit resolution • High speed, m axim um conversion speed 35MSPS

ORP12

Abstract: light dependent resistor orp12 light resistance orp12 SCSR 118 68HC05B4 disp1 Application Note AN431 b765 IC MC 14489 a608
Contextual Info: Order this document MOTOROLA as AN431/D SEMICONDUCTOR APPLICATION NOTE AN431 Temperature measurement and display using the MC68HC05B4 and the MC14489 By Jeff Wright, Motorola Ltd., East Kilbride INTRODUCTION TEMPERATURE MEASUREMENT This application note is intended to show the basic

400V 224 K capacitor

Abstract: 250v 224 K capacitor capacitor 104 400v
Contextual Info: CERAMIC DISC CAPACITOR HOW TO ORDER CC1 1 — F 2 7 SL 4 3 1 B 5 331 6 7 J 8 S P 10 9 W 11 1 > Ü bbUSIÜ Capacitor Type C ode Type » J S ä lÄ W flH fc fl- * « » 2, CC1 Lo w vo lta g e te m p e ra tu re c o m p e n s a te d disk c e ra m ic c a p a c ito r

MS27473

Contextual Info: M IL-C-38999 Series II Connectors KJ How To Order MS27473 T 18 A 35 S A MS NUMBER SHELL STYLE- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - ^ T T T T T M ilitary Nomenclature CLASS - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - MS NUMBER SHELL STYLE

105k 400V

Abstract: 4334Z ECW-F2H ECWF2H f105k
Contextual Info: Film Capacitors Metallized Polypropylene Type ECW-F Series This series is designed for applications where high frequency and high current are required. Features • • • • Very low loss at high frequency Very small inherent temperature rise Flame retardant Epoxy resin coating

iz1h

Contextual Info: PLASTIC FILM CAPACITORS EW x iic k ic o r t _ M etallized Polyester Film C apacitor | 7 | | series For 100 C ¡Safety Standards recognized; Safety Standards Recognized • Applying the most authorized safety satandards in the world, such as UL, CSA, VDE, SEV,

CT-920

Abstract: AWG34
Contextual Info: B uyduit Tool Chart for LAA, LAB Lugs and SA Splices Tool Chart for Compression-Type Aluminum Lugs and Splices For in sta lla tio n on C opper and A lum inu m Cables Using RlNDUIT Tools and Those of O ther M anufacturers Tool Chart for Compression Connectors

conventional bicmos

Contextual Info: 3ÔE D B 4Ô2S771 QQOÔ'iSa 3 Ö I D T _ - P - % - 2 3 - 6 3 INTEGRATED DEVICE HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization

Contextual Info: CY7C470 CY7C472 CY7C474 PRELIMINARY * ¥ CYPRESS SEMICONDUCTOR 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Functional Description 8K x 9 , 16K x 9, and 32K x 9 FIFO buffer memory T he C Y C 47X FIFO series consists o f high­ speed, low-power, first-in first-out F IF O

Contextual Info: PLASTIC FILM CAPACITORS X U nicKicoxi M etallized P olyester Film C apacitor series For 105 C Electrical Appliance and Material Control Law (Japan approved For AC power source) s tíi’ífó'S í.íftgáíSs.-SSfeg: • Highly reliable and superior in high frequency applications, self-healing and non-inductive

SIS 302

Contextual Info: MODEL SERIES L S in g le In-Line L o w Profile C o n fo rm a i C o a te d Thick Film Resistor N e tw o r k E L E C T R IC A L Stan d ard R e sista n c e R an ge , O h m s Stan d ard R e sista n c e Tolerance, at 25 ° C O perating Te m p e ratu re R a n g e

Contextual Info: m CA45M SERIES CA45 CHIP SOLID TANTALUM ELECTROLYTIC CAPACITORS CA45 FEATURES •Molded ch ip s o lid tantalum e le c t r o ly t ic ca p a cito r ^ Used fo r c e llu la r T e le Phones- personal compu te rs photog ra phs. It# s Used in SMT c ir c U it and o th ers e le c tr o n ic product a p p lic a tio n s -

TC74HC533AP

Contextual Info: TC74HC373AP/AF TC74HC533AP/ÄF OCTAL D - T Y P E LATCH WITH 3 -ST A T E OUTPUT TC74HC373AP/AF N O N - IN V E R T IN G TC74HC533AP/AF IN V E R T IN G T he TC74HC373A an d TC74HC533A a re high speed CMOS O CTA L L A T C H w ith 3 -S T A T E O U TPU T fa b ric ate d w ith silicon g ate C2MOS technology.

Contextual Info: MOTOROLA Order this document by MTE53N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTE53N50E ISOTOP™ TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to

tr 2n2160

Abstract: 2N167 2N1471 2n1671a 2n2160 unijunction
Contextual Info: TYPES 2N1671, 2N1671A, 2N1671B. ¿mm P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L S 6 8 3 1 8 9 , O C T O B E R 1 9 6 2 - R E V t S E D M A Y 1 96 8 Designed for Medium-Power Switching/ Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance

KA3525A

Abstract: KA3525 Samsung sd ka3525a with circuit pwm CONTROLLER BLOCK DIAGRAM MAX4549
Contextual Info: SAMSUNG ELECTRONICS INC b?E D KA3525A • 7^4142 0017404 bTl LINEAR INTEGRATED CIRCUIT VOLTAGE-MODE PWM CONTROLLER T h e K A 3525A is a -m o n o lith ic in te g ra te d c irc u it th a t in clu d e d all of th e co n tro l c irc u it n ece ssa ry fo r a p u lse w id th m o d u la tin g re gu la to r.

marking code t1a

Abstract: ECST Panasonic marking t1c PANASONIC ce Series 686r ECST1 panasonic ge series capacitors
Contextual Info: Tantalum Electrolytic Capacitors Surface Mount Type TE Series Features • For general purpose surface mount type • Compact size & wide CV range • High solderability & stable characteristics for soldering Specifications Item P erform ance C haracteristics

MC68HC705

Abstract: 2N2222 r4 01e3 021F 022d AN499/D MC68HC705 programmer MC68HC705J2 MC68HC705P9 motorola 0233
Contextual Info: MOTOROLA Order this document as AN499/D SEMICONDUCTOR APPLICATION NOTE AN499/D Let the MC68HC705 program itself By Åke Webjörn, Motorola AB, Sweden 1 Introduction There are several popular MCUs Micro-Computer-Units from Motorola on the market, which have their program

MC68HC705 programmer

Abstract: MC68HC705 01e3 022d AN499/D B784 HIS 0169 MC68HC705P9 UV 471 MC68HC711D3
Contextual Info: Order this document as AN499/D Freescale Semiconductor AN499/D Let the MC68HC705 program itself By Åke Webjörn, Freescale AB, Sweden Freescale Semiconductor, Inc. 1 Introduction There are several popular MCUs Micro-Computer-Units from Freescale on the market, which have their program

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent