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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly	Original	st2318srg ot-23	PDF
N mosfet sot-23 Abstract: sot-23 MARKING CODE 23A marking sot-23 Contextual Info: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly	Original	st2318srg ot-23 n mosfet sot-23 sot-23 marking code 23a +1marking sot-23	PDF

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Contextual Info: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Original

st2318srg ot-23

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N mosfet sot-23

Abstract: sot-23 MARKING CODE 23A marking sot-23
Contextual Info: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Original

st2318srg ot-23 n mosfet sot-23 sot-23 marking code 23a +1

PDF