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    ST2300 Search Results

    ST2300 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge ST2300S23RG
    VBsemi Electronics Co Ltd N-Channel 20 V MOSFET in SOT-23 package with 0.028 ohm RDS(on) at 4.5 V VGS, 6 A continuous drain current, and 8.8 nC gate charge, suitable for DC/DC converters and load switches. Original PDF
    badge X49ST2-30.000-F18LJDTD
    Hang Crystal International Quartz Crystal Unit X49ST2 in HC-49/S through-hole package, 11x4.6mm, height 3.5 or 2.5mm, 2 leads, fundamental and 3rd overtone modes, frequency range 3.0 to 80.0MHz, RoHS compliant, lead-free, halogen-free. Original PDF
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    ST2300 Price and Stock

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    Hang Crystal International X49ST2-30.000-F18LJDTK

    CRYSTAL 30MHZ 18PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () X49ST2-30.000-F18LJDTK 35,200 1
    • 1 $0.20
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    X49ST2-30.000-F18LJDTK Tape & Reel 35,200 1,000
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    Hang Crystal International 049ST2-30.000F16DTNJK

    HC-49S,2P,30MHz,16pF,+/-10ppm,-4
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    DigiKey 049ST2-30.000F16DTNJK Bulk 29,232 1
    • 1 $0.15
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    Vishay Semiconductors TCST2300

    SENSOR OPT SLOT PHOTOTRAN PCB MT
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    DigiKey TCST2300 Tube 666 1
    • 1 $1.46
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    • 100 $1.07
    • 1000 $0.96
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    Orion Fans OA300ST-23004

    3 FAN 230V SMART TRAY REMOTE
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    DigiKey OA300ST-23004 Box
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    RS OA300ST-23004 Bulk 1
    • 1 $178.50
    • 10 $162.44
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    Vishay Intertechnologies TCST2300

    - Bulk (Alt: 33C1120)
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    Avnet Americas () TCST2300 Bulk 1
    • 1 $1.28
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    TCST2300 Tube 6 Weeks 1,020
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    Mouser Electronics () TCST2300 4,880
    • 1 $1.24
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    TCST2300 4,814
    • 1 $1.24
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    Newark TCST2300 Bulk 514 1
    • 1 $1.28
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    TTI TCST2300 Tube 1,020
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    EBV Elektronik TCST2300 7 Weeks 1,020
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    ST2300 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ST2300

    Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
    Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original
    ST2300 ST2300 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23 PDF

    ST2300

    Abstract: MARKING CODE mosfet marking code 4A n channel power trench MOSFET
    Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original
    ST2300 ST2300 OT-23-3L MARKING CODE mosfet marking code 4A n channel power trench MOSFET PDF

    Contextual Info: ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original
    ST2300SRG ST2300SRG OT-23 PDF

    Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original
    ST2300 ST2300 OT-23-3L PDF

    ST-11M-030

    Abstract: ST-02M-C60 DC-140-003 24M05 ST-09G-030 ST-10G-030 ST-13002 ST-06M-260 ST-12M-030 ST-030-130
    Contextual Info: DC POWER JACKS EXPLANATION * BUILD YOUR OWN DC POWER JACKS ORDER FORMAT * 4 2 - PART OF PIN DIAMETER SERIES: TREATMENT: DC = DC Power Jacks 0 = Standard Plated 1 - COLOR OPTION - TREATMENT C FEATURE SEQUENTIAL NO. SERIES D EXTEND VERSION Fill in all boxes shown with options selected from below.


    Original
    ST-18M-L50 ST-200-L10 ST-200-L50 ST-201-L10 ST-201-L50 ST-202-L10 ST-202-L50 ST-12D-L30 ST-12G-L30 ST-12M-L30 ST-11M-030 ST-02M-C60 DC-140-003 24M05 ST-09G-030 ST-10G-030 ST-13002 ST-06M-260 ST-12M-030 ST-030-130 PDF

    ir 847p

    Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn
    Contextual Info: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA |xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)


    OCR Scan
    PDF

    SOT23-6L

    Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
    Contextual Info: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original
    STN6561 STN6561 OT-23-6L lSTN6561 ST2300 SOT23-6L SOT-23-6L CA SOT 25 marking 6l IDM-10 N -Channel power Sot 6 PDF