ST2300 Search Results

ST2300

Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

ST2300

Abstract: MARKING CODE mosfet marking code 4A n channel power trench MOSFET
Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

Contextual Info: ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

ST-11M-030

Abstract: ST-02M-C60 DC-140-003 24M05 ST-09G-030 ST-10G-030 ST-13002 ST-06M-260 ST-12M-030 ST-030-130
Contextual Info: DC POWER JACKS EXPLANATION * BUILD YOUR OWN DC POWER JACKS ORDER FORMAT * 4 2 - PART OF PIN DIAMETER SERIES: TREATMENT: DC = DC Power Jacks 0 = Standard Plated 1 - COLOR OPTION - TREATMENT C FEATURE SEQUENTIAL NO. SERIES D EXTEND VERSION Fill in all boxes shown with options selected from below.

ir 847p

Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn
Contextual Info: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA |xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)

SOT23-6L

Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
Contextual Info: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices