ST-SI-UK 4 Search Results

st-si-uk 4

Abstract: 0921011
Contextual Info: Extract from the online catalog ST-SI-UK 4 Order No.: 0921011 Fuse plug, Nominal current: 6.3 A, Color: black Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data

PDINP075500A-0-0-01

Abstract: pigtail pin photodiode ge Si apd photodiode APDS PDINP075100A PDSIU500ST73-T-0 0/PDINP075500A-0-0-01
Contextual Info: PD LD Inc PDXX Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum from 400 to 1100nm, InGaAs is

rly1

Contextual Info: GSM-AUTO GSM Cont roller User m anual INDEX Descript ion. . . . . . . . . . . . . 2 Preparing t he SI M card. . . . . . . . . . . 3 I nst allat ion. . . . . . . . . . . . . . 4

Contextual Info: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum

Contextual Info: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device

InGaAs APD photodiode 1550

Abstract: InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin
Contextual Info: PDINBU 45 UM DETECTORS 1100nm to 1650 nm InGaAs PIN Photodiodes PDINBU045G00A-0-0-01 PD-LD offers InGaAs PIN photodiodes with a 45 micron diameter active area that are ideal for use in Channel Monitoring Applications. The detectors exhibit their intrinsically high optical responsivity

PDINP075ST83-W-0

Abstract: PDINP075SC23-W-0 PDINP075FC13-W-0 laser Silicon Detector
Contextual Info: InGaAs PIN Photodiodes 75 µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from 1100 to 1650nm. These devices are available in fiber pigtailed

diode code m10

Abstract: avalanche photodiodes 1650nm APD 10ghz
Contextual Info: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area

k3607

Abstract: k3601 k3605 ZK3610-00 k3603 P55i
Contextual Info: Customer Information Sheet D R A W I N G No.: S H E E T 2 OF 2 K3 60 I - 9 I | IF IN D O U B T SEE C O M P O N E N T S P E C I F I C A T I O N C 0 3 4 X X FOR A S S E M B L Y - ASK | | NOT T O S C A L E | THIRD ANGLE PROJECTION INSTRUCTIONS AND TECHNICAL

Contextual Info: 10 1+13 N O T E S I. MATERIAL lO y O C : 7 0 7 5 0 4 6 . + 2 4 * 1* . U L 9 4 V - 0 HOUSING A (2.4) - a w io T E R M IN A L \ a E A x A 75T H -9 : + 9 + i 4 U ; v m + * 7 K 0 0 7 .00* . U L 9 4 V —0 (SO ACTUATOR POLYPHENYLENE SULFIDE .GLASS FILLED . UL94V-0IBLACK)

EB-230

Abstract: PA603T mpa603t 048164 IC830
Contextual Info: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£

Ge APD

Abstract: PD-LD analog laser diode 6 GHz
Contextual Info: Analog InGaAs PIN Detectors Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 70 micron diameter active area detector that responds optimally to both 1310 and 1550

FOTP-188

Abstract: FOTP-34 7501450
Contextual Info: Fiber Optic Products Catalog Switches Ruggedized Multimode Switches Refractive Plate Switch Part Number 6588871-1 Product Facts: No optical path interruption @200 G’s for 8 ms • Successfully passed MIL_S_901D Navy Heavyweight Shock Test (Barge Test)

MT48LC16M16A2P-75 IT:D

Contextual Info: Drehgeber und Winkelsensorik Selection Guide Inkrementale Drehgeber                                               

2SB737

Abstract: 2SD786 2SD786S 89ji 2Sd786 rohm 2SB737 rohm
Contextual Info: ROHM CO LTD h7 ~ 4QE D 7 a a a ci c ':i o o o s a i a a / T ransistors 2SD786/2SD786S ' 2SD786 2SD786S m rh h 7 ^ 2 7 -0 °) V lJ - 1> K7 > V ^ iW Low Noise Amp. Epitaxial Planar NPN Silicon Transistors 1W ff^ > £ IS l/D im e n s io n s U n it: mm) m r a t' is tttm o

Contextual Info: IF IN DOUBT - ASK NO T TO SCALE TH IRD ANGLE PROJECTION ALL DIM ENSIO NS IN mm H SD C AR D PIN DESIGN Pin No. 1# Name Description CD/DAT3 Card detect/Data I/O 2# CMD Command 3# VSS1 Ground 4# VDD Power 5# CLK Clock 6# VSS2 Ground 7# DATO Data I/O 8# DAT1

PA1552

Abstract: PA1552BH YTYN astex wv471 UV 471
Contextual Info: ~ r — $ • v — ï^ H I C o m p o u n d Field Effect P o w e r T ran sisto r uPA1552B t '^ / N 0r7 - M O S FET 7 U ' f ^ 'y 3 ~ > ^7 ^ I l f f i AîPA1552BIÎ, N ^ - ^ J H Ê É S / ^ - M O S FET77 U -f ? * m Z ' f y ï X f & f e t f f è t lT 4b 'U , g -ilT 7?

Contextual Info: DRAWING No.: M 8 0 - 4 T 10 6 0 5 F 9 - 0 I - 3 2 1 - 0 1 - 3 2 1 Customer Informatic>n Sheet SHEET 2 OF 2 1 IF IN D O U B T - ASK i i NOT TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K

BD 509 CONNECTOR

Abstract: PDINP075100A Flexcore PDINP075500A-0-0-01
Contextual Info: PD LD Inc PDINP Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from

Contextual Info: D R A W I N G No.: M 8 0 - 5 T I 0 4 0 5 M I -0 3 - 3 3 1 - 0 0 - 0 0 0 Customer Information Sheet rwi S H E E T 2 OF 2 IF IN D O U B T - ASK NOT TO S CA L E THIRD ANGLE PROJECTION ALL D I M E N S I O N S IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K

Contextual Info: Customer Informatic>n Sheet DRAWING N o.: M 8 0 - 5 T 10 8 0 5 M 3 - 0 4 - 3 3 2 - 0 0 - 0 0 0 SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K

UPA1400H

Abstract: PA1400H FSV 052 MCDN WS300 MPA1453H 13X26X4 WS-300
Contextual Info: NEC fë'g- y < r y - Compound Pow er Transistor ¿ ¿ P A 1 4 5 3 H P N P i b 0^ + '> 7 ; H ' > i j 3 > h 7 > '> X ^ 7 U -f i i f f i PN P S ilic o n E p ita x ia l T r a n s i s t o r H ig h S p e e d S w it c h in g In d u s tr ia l U s e D C-D C 3 <r>Y 7 <

2SC2003

Abstract: transistor 2sc2002 2SC2002 2SA953 PA33 PT600 npn transistor w5
Contextual Info: NEC j m * = r i \ r r x y ' j 3 > h ^ X ^ Silicon T ran sisto rs A 2SC2002,2003 NPN Silicon Epitaxial Transistor Audio Frequency Am plifier ftM m / « « /F E A T U R E S PACKAGE D IM ENSIO NS Unit : mm o t — r"4 Yv4 0 2SA953, 9 5 4 ¿ 3 > 7 °iJ (, O

smd transistor NG

Contextual Info: P D -9 1 4 3 3 A International Rectifier I R IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt r a t e d HEXFET TRANSISTOR P-CHANNEL RADHARD -100 Volt, 0.068W, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability