ST TO-18 MARKING CODE Search Results

MYS 99

Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Contextual Info: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes

Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package Datasheet - production data Features Order code Channel VDS 5 N 8 STS8C5H30L 30 V P RDS on max ID 0.022 Ω 8A 0.055 Ω 5A • Conduction losses reduced

Contextual Info: T H I R DA N G L EP R O J E C T I O NI ALTERATION 1 SS U E ITEM CODE ECWF2W564JA 1 / 2W684JA 1 / 2W824JA { { 2Wl05JA { { 2W125JA { { 2W155JA 2W185JA { { 2W225JA { 2W275JA { { 2W335JA ( { 2W395JA 2W475JA { { ( { CAP DIMENSIONS VOLUME MARKING Note F T H

Contextual Info: STL4N10F7 N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID STL4N10F7 100 V 0.07 Ω 4.5 A • N-channel enhancement mode

MYS 99

Abstract: STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics
Contextual Info: AN926 APPLICATION NOTE Brand Traceability with for NVRAM Products INTRODUCTION To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a

WFA105J

Abstract: qaf 212 WFA225J
Contextual Info: i H I R DA N G L EP R O J E C T I O NI ALTERATION I SS U E ITEM CODE ECWF2W564JAC 1 1 2W684JAC 1 1 2W824JAC 1 1 2Wl05JAC 1 1 2W125JAC 1 1 2W155JAC 1 1 2W185JAC 1 1 2W225JAC 1 1 2W275JAC 2W335JAC 1 1 2W395JAC 1 1 2W475JAC CAP DIMENSIONS VOLUME MARKING Note

Contextual Info: STF140N6F7, STH140N6F7-2, STP140N6F7 N-channel 60 V, 0.0025 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFETs in TO-220FP, H2PAK-2 and TO-220 packages Datasheet - target specification Features Order codes 1 2 STH140N6F7-2 1 60 V 0.003 Ω STP140N6F7

qaf 212

Abstract: WFA225K
Contextual Info: T H I R DA N G L EP R O J E C T I O N I ALTERATION I SS U E ITEM CODE ECWF2Wl04JAB 1 2W124JAB 1 1 2W154JAB 1 2W184JAB 1 2W224JAB 1 2W274JAB H 2W334JAB 1 2W394JAB 1 1 2W474JAB 1 2W564JAB 1 1 2W684JAB 1 2W824JAB 1 2Wl05JAB H 2W125JAB 2W155JAB 1 2W185JAB 1 2W225JAB

5N60M

Contextual Info: STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes 3 1 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.7 A STD5N60M2

Contextual Info: STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET VI DeepGATE™ Power MOSFETs Datasheet - production data Features Order codes TAB VDS RDS on max ID 40 V 1.15 mΩ 180 A TAB STH400N4F6-2 STH400N4F6-6 2 7 3 1 1 H2PAK-2

Contextual Info: STL18N3LLH7 N-channel 30 V, 0.0034 Ω typ., 18 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - target specification Features Order code VDS RDS on max ID STL18N3LLH7 30 V 0.0045 Ω 18 A • Very low on-resistance

STW19NM50N

Contextual Info: STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes RDS on max ID 550 V 0.25 Ω 14 A STF19NM50N 3 1 VDS @ TJmax 3 2 1

STH240N75F3-2

Abstract: 240N75F3
Contextual Info: STH240N75F3-2, STH240N75F3-6 N-channel 75 V, 2.6 mΩ typ., 180 A STripFET III Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet − production data Features Order code VDSS RDS on max. ID 75 V < 3.0 mΩ 180 A STH240N75F3-2 STH240N75F3-6 TAB 7

Contextual Info: STF40N60M2, STFI40N60M2, STFW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.088 Ω 34 A STF40N60M2

Contextual Info: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223

Contextual Info: STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFET in TO-220, IPAK and TO-247 packages Datasheet − preliminary data TAB Features TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 2 1

ISD25

Abstract: STB18NF30
Contextual Info: STB18NF30 N-channel 330 V, 18 A STripFET II Power MOSFET in D²PAK package Preliminary data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A TAB • 100% avalanche tested ■ 175 °C junction temperature 3 1 Applications ■ D²PAK

Contextual Info: STD80N4F6, STU80N4F6 N-channel 40 V, 5.5 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in DPAK and IPAK packages Datasheet − production data Features Order codes STD80N4F6 TAB TAB STU80N4F6 3 3 2 1 1 DPAK VDS RDS on max 6.0 mΩ 40 V ID 80 A 6.3 mΩ

Contextual Info: STL75N8LF6 N-channel 80 V, 5.6 mΩ, 18 A, PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STL75N8LF6 80 V < 7.4 mΩ 18 A (1) 8 5 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark

Contextual Info: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω

STB120N4LF6

Abstract: STD120N4LF6 STD120
Contextual Info: STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STB120N4LF6 40 V 4.0 mΩ 80 A STD120N4LF6 40 V 4.0 mΩ 80 A 3 1 • Logic level drive ■ 100% avalanche tested

Contextual Info: STL120N2VH5 N-channel 20 V, 0.002 Ω, 28 A STripFET V Power MOSFET in PowerFLAT™ 5x6 package Features Order code VDSS RDS on max ID STL120N2VH5 20 V < 0.003 Ω 28 A • Improved die-to-footprint ratio ■ Very low profile package ■ Very low thermal resistance

34N65M5

Abstract: STB-34 stb34
Contextual Info: STx34N65M5 N-channel 650 V, 0.098 Ω, 29 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Preliminary data Features Order code TAB VDSS @ TJmax RDS on max 2 ID 3 1 D2PAK STB34N65M5 3 TAB 1 TO-220FP STF34N65M5 STFI34N65M5

STB120N4

Abstract: STD120N4F6 STD120n4 STD120
Contextual Info: STB120N4F6 STD120N4F6 N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max. ID STB120N4F6 40 V 4 mΩ 80 A (1) STD120N4F6 40 V 4 mΩ 80 A (1) 3 1. Current limited by package • Standard threshold drive