ST SMD DIODE MARKING CODE C Search Results

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate

st smd diode marking code

Contextual Info: STPS1045HR Aerospace 2 x 10 A - 45 V Schottky rectifier Features • Forward current: 2 x 10 A ■ Repetitive peak voltage: 45 V ■ Low forward voltage drop: 0.75 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses ■ Low capacitance

Contextual Info: Formosa MS SMD Schottky Barrier Diode BAT54T / AT / CT / ST List List. 1 Package outline. 2

st smd diode marking code

Abstract: a20 Schottky diode st SMD MARKING CODE A20 st smd diode marking code C smd diode schottky code marking l2 A2 diode smd 100OHM BAT54AT BAT54CT BAT54ST
Contextual Info: Formosa MS SMD Schottky Barrier Diode BAT54T / AT / CT / ST List List. 1 Package outline. 2

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

st smd diode marking code

Abstract: STMicroelectronics smd marking code
Contextual Info: STPS1045HR Aerospace 2 x 10 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is

Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses

st smd diode marking code

Abstract: STPS20100S1 smd diode B3 STMicroelectronics smd DIODE marking code STPS20100AFSYHRB 5106 smd diode code B2 smd diode order marking code stmicroelectronics STPS20100HR STPS20100SHRB
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses

5962F8776003VXA

Abstract: 5962F8762401VXA 5962F8762403VXC RHFAC2525K02V RHFAC14AK1
Contextual Info: 54ACxxxx, 54ACTxxxx Rad-hard advanced high-speed 5 V CMOS logic series Data brief Features • AC: 2 to 6 V operating voltage • ACT: 4.5 to 5.5 V operating voltage • High speed TPD = 4.5 ns typ. • Low DC power dissipation: 8 µA max. Flat-14 • Symmetrical 24 mA output characteristics

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: SPT02-236DDB Automation sensor transient and overvoltage protection Datasheet − production data Applications • Factory automation sensor application • Proximity sensor interface protection • Transient and surge voltage protection • Compliant with sensor standard, EN 60947-5-2

BB142

Abstract: st smd diode marking code BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB142 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB142 PINNING FEATURES • Excellent linearity

BB141

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB141 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB141 PINNING FEATURES • Excellent linearity

st smd diode marking code

Abstract: BB181 marking code 4 SC-79
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB181 VHF variable capacitance diode Product specification 1998 Nov 26 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity The BB181 is a variable capacitance diode, fabricated in planar technology

Contextual Info: ESDAXLC6-1BU2K Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.25 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

st smd diode marking to3

Abstract: smd diode marking code TO3 mosfet SMD MARKING CODE 352 STRH40N6 STMicroelectronics smd DIODE marking code smd st diode marking to3 STRH40N6SY1 smd diode order marking code stmicroelectronics smd K 739 mosfet
Contextual Info: STRH40N6 N-channel 60 V, 0.036 Ω, SMD.5 rad-hard low gate charge STripFET Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened

st smd diode marking code VU

Abstract: st smd marking code VU st smd diode marking code st smd diode VU smd marking code fj Device marking code u5 diode Diode marking m7 DIODE smd marking CODE WA smd diode marking 325 AFL smd Marking
Contextual Info: Schottky Barrier Diode mtmm o u t l i n e Single Diode D1FH3 U nit I mm Package : 1F W eight 0.058« T y p 30V 3A ' I Feature C ath o d e m ark C O t • Small SMD • S V f = 0 .36V • Super-Low V f= 0 .36V asm » m CM - I IO ) • 'J v S S M D QC"— M —

diode smd marking Z2

Abstract: diode Z2 018 SMD MARKING CODE Z2 diode marking z2 marking code z2 esdaxlc6
Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet  preliminary data Features • Bidirectional device ■ Extra low diode capacitance: 0.4 pF ■ Low leakage current ■ 0201 SMD package size compatible ■ Ultra small PCB area: 0.18 mm2

smd DEE diode

Abstract: smd code marking 9l 16 pins qfn 3x3 footprint SPT01-335DEE st smd diode marking code QFN 3X3 STMicroelectronics smd DIODE marking code symbol inductive proximity sensor circuit diagram SMD Tack Switch
Contextual Info: SPT01-335DEE Automation sensor transient and overvoltage protection Datasheet − production data Features • Triple diode array for power bus protection, switch protection and reverse blocking protection ■ Flexible connection for NPN low side or PNP high side sensor configuration

Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.4 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

Contextual Info: SPT01-335DEE Automation sensor transient and overvoltage protection Datasheet − production data • Flexible connection for NPN low side or PNP high side sensor configuration • 6 V to 36 V supply voltage range • Stand-off voltage: 36 V • Minimum breakdown voltage VBR: 38 V