ST SMD DIODE MARKING CODE C Search Results

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate

Contextual Info: Formosa MS SMD Schottky Barrier Diode BAT54T / AT / CT / ST List List. 1 Package outline. 2

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

st smd diode marking code

Abstract: STMicroelectronics smd marking code
Contextual Info: STPS1045HR Aerospace 2 x 10 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is

Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses

st smd diode marking code

Abstract: STPS20100S1 smd diode B3 STMicroelectronics smd DIODE marking code STPS20100AFSYHRB 5106 smd diode code B2 smd diode order marking code stmicroelectronics STPS20100HR STPS20100SHRB
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses

5962F8776003VXA

Abstract: 5962F8762401VXA 5962F8762403VXC RHFAC2525K02V RHFAC14AK1
Contextual Info: 54ACxxxx, 54ACTxxxx Rad-hard advanced high-speed 5 V CMOS logic series Data brief Features • AC: 2 to 6 V operating voltage • ACT: 4.5 to 5.5 V operating voltage • High speed TPD = 4.5 ns typ. • Low DC power dissipation: 8 µA max. Flat-14 • Symmetrical 24 mA output characteristics

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: SPT02-236DDB Automation sensor transient and overvoltage protection Datasheet − production data Applications • Factory automation sensor application • Proximity sensor interface protection • Transient and surge voltage protection • Compliant with sensor standard, EN 60947-5-2

BB143

Abstract: BP317 marking code l
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB143 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB143 PINNING FEATURES • Excellent linearity

BB142

Abstract: st smd diode marking code BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB142 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB142 PINNING FEATURES • Excellent linearity

BB141

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB141 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB141 PINNING FEATURES • Excellent linearity

Contextual Info: ESDAXLC6-1BU2K Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.25 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

st smd diode marking to3

Abstract: smd diode marking code TO3 mosfet SMD MARKING CODE 352 STRH40N6 STMicroelectronics smd DIODE marking code smd st diode marking to3 STRH40N6SY1 smd diode order marking code stmicroelectronics smd K 739 mosfet
Contextual Info: STRH40N6 N-channel 60 V, 0.036 Ω, SMD.5 rad-hard low gate charge STripFET Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened

Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.4 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

Contextual Info: SPT01-335DEE Automation sensor transient and overvoltage protection Datasheet − production data • Flexible connection for NPN low side or PNP high side sensor configuration • 6 V to 36 V supply voltage range • Stand-off voltage: 36 V • Minimum breakdown voltage VBR: 38 V

ST0201

Abstract: st smd diode marking code b2 smd diode marking code L2 st smd diode marking code ESDALC6V1-1U2
Contextual Info: ESDALC6V1-1U2 Single-line low capacitance Transil for ESD protection Features • Breakdown voltage VBR = 6.1 V min. ■ Unidirectional device ■ Multiple ESD strike sustainability ■ Very low diode capacitance: 12 pF typ. at 0 V ■ Low leakage current

st smd diode marking code

Abstract: marking 5BX BB154 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB154 UHF variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification UHF variable capacitance diode BB154 FEATURES PINNING • Excellent linearity PIN

philips 23

Abstract: Philips MARKING CODE BB133 BB150
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB150 VHF variable capacitance diode Product specification Supersedes data of 1996 May 03 File under Discrete Semiconductors, SC01 1998 Sep 15 Philips Semiconductors Product specification VHF variable capacitance diode

BB131

Abstract: "MARKING CODE P1" BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB131 VHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1998 Sep 15 Philips Semiconductors Product specification VHF variable capacitance diode BB131 FEATURES • Excellent linearity

BB135

Abstract: "MARKING CODE P5" BB134 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB135 UHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1998 Sep 15 Philips Semiconductors Product specification UHF variable capacitance diode BB135 FEATURES • Excellent linearity

smd diode order marking code stmicroelectronics

Abstract: ST0201 J-STD-004 st smd diode marking code smd transistor marking 1B ESDALC6V1-1BU2 marking code B2 St020
Contextual Info: ESDALC6V1-1BU2 Single-line low capacitance Transil for bidirectional ESD protection Features • Breakdown voltage VBR = 6.1 V min. ■ Bidirectional device ■ Multiple ESD strike sustainability ■ Very low diode capacitance: 5 pF typ. at 0 V ■ Low leakage current