ST MARKING EV Search Results

sincos

Abstract: CS4192 CS4192XDWF16 CS4192XDWFR16 CS8156 speedoMETER sacd
Contextual Info: CS4192 Single Air-Core Gauge Driver http://onsemi.com 16 1 SO–16L DWF SUFFIX CASE 751G PIN CONNECTION AND MARKING DIAGRAM 1 A WL, L YY, Y WW, W  Semiconductor Components Industries, LLC, 2001 December, 2001 – Rev. 6 1 16 COS+ COS– SO GND GND ST CS

CS4192

Abstract: CS4192XDWF16 CS4192XDWFR16 CS8156
Contextual Info: CS4192 Single Air-Core Gauge Driver http://onsemi.com 16 1 SO–16L DWF SUFFIX CASE 751G PIN CONNECTION AND MARKING DIAGRAM 1 A WL, L YY, Y WW, W  Semiconductor Components Industries, LLC, 2001 July, 2001 – Rev. 5 1 16 COS+ COS– SO GND GND ST CS SCLK

Contextual Info: Thyr i st orSur geSuppr essor SMD •外観図 KU10NU11 OUTLI NE Package：M2F t ：mm Uni Marking（ｏld） Type No. 90V100A 特 長 品名略号 Type No. カソードマーク Cathode mark 煙片方向特性 煙高速応答性 煙サージ電流耐性大

ufdfpn8 footprint

Abstract: CHARGE-TRANSFER TOUCH SENSOR STM8T141 datasheet proximity switch schematic STM8T141 ufdfpn8 pcb footprint proximity sensor interfacing with microcontroller STM8T14x MB856 schematic capacitive proximity sensor
Contextual Info: UM0742 User manual STM8T14X-EVAL evaluation kit Introduction The STM8T14X-EVAL is an evaluation kit which introduces developers to STMicroelectronics STM8T141 touch and proximity capacitive sensor. It contains an STM8T141 evaluation board, the MB858, plus a set of preconfigured plug-in

30ST350

Abstract: 15ST120 15ST120S 15ST175 15ST175S
Contextual Info: POLYFUSE Resettable PTCs Axial Lead Battery Strap Type > ST Series ST Series Description The new ST Series device provides reliable, noncycling protection against overcharging and short circuits events for rechargeable battery cells where resettable protection

1A225

Contextual Info: PRODUCT INFORMATION 880nm 1A225 High-Performance LED Compared with lasers and ELEDs, this device can reduce device costs in single-mode Ethernet networks. And since it’s packaged in a hermeti-cally sealed can, it achieves high reliability even in harsh operating environments.

STRH8N10STF3

Contextual Info: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

electret microphone

Abstract: AN2240 "Microphone Preamplifier" TS472 TS472IQT STEVAL-CCA023V1 1X4 header pin 2.54 HEADER 2X7
Contextual Info: AN2240 Application note Using the demonstration board for the TS472 low noise microphone preamplifier with 2 V bias Introduction This application note describes the STEVAL-CCA023V1 demonstration board, specifically designed to evaluate the TS472 microphone preamplifier.

st smd diode marking code

Abstract: STRH13N20SY1 STRH13N20SY3 STRH30N20SY3
Contextual Info: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

smd DIODE code marking 20A

Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

12V ENERGY LIGHT CIRCUIT DIAGRAM

Abstract: STRH10N25ESY3
Contextual Info: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

STRH100N10FSY3

Abstract: STRH100N10FSY1
Contextual Info: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

Contextual Info: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

mosfet 40a 200v

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Contextual Info: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge ■ Light weight

STRH60N20FSY3

Abstract: 25C312
Contextual Info: STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

STRH40N25FSY3

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1
Contextual Info: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge

STRH40P10FSY3

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA

Contextual Info: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

STRH50P6FSY1

Abstract: STRH50P6FSY3
Contextual Info: STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH50P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA

1A225

Contextual Info: PRODUCT INFORMATION 880nm 1A225 High-Performance LED Compared with lasers and ELEDs, this device can reduce device costs in single-mode Ethernet networks. And since it’s packaged in a hermeti-cally sealed can, it achieves high reliability even in harsh operating environments.

Contextual Info: STRH60N20FSY1 STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH60N20FSY1 200V STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

CT8-13

Contextual Info: STRH13N20SY1 STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH13N20SY3 200 V STRH13N20SY3 200 V s ct 2 1 • Low RDS(on) ■ Fast switching ■ Single event effect (SEE) hardned ■

ST02D-170F2

Abstract: AHA 500 ST02D-1 Zener Diode marking 3a DIODE CQ U180
Contextual Info: m n m ^ /u x Power-Clamper Surface M ount D evice m s Z e n e r Diode with F as t Recovery Diode • f t M U ! OUTLINE ST02D-170F2 170V 200W ftft ■H i Feature ■ Power Zener Diodes with FRD ■ SMD Package ■ Application for snubber circuit £ V\ 'T ¿5 V

marking code AHF

Contextual Info: SD4931 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 150 W min. with 14.8 dB gain @ 175 MHz • In compliance with the 2002/95/EC European