ST MARKING 175 Search Results

sincos

Abstract: 0176t
Contextual Info: CS4192 Single Air-Core Gauge Driver http://onsemi.com 16 1 SO–16L DWF SUFFIX CASE 751G PIN CONNECTION AND MARKING DIAGRAM 1 A WL, L YY, Y WW, W  Semiconductor Components Industries, LLC, 2001 December, 2001 – Rev. 6 3162 16 COS+ COS– SO GND GND ST

sincos

Abstract: CS4192 CS4192XDWF16 CS4192XDWFR16 CS8156 speedoMETER sacd
Contextual Info: CS4192 Single Air-Core Gauge Driver http://onsemi.com 16 1 SO–16L DWF SUFFIX CASE 751G PIN CONNECTION AND MARKING DIAGRAM 1 A WL, L YY, Y WW, W  Semiconductor Components Industries, LLC, 2001 December, 2001 – Rev. 6 1 16 COS+ COS– SO GND GND ST CS

CS4192

Abstract: CS4192XDWF16 CS4192XDWFR16 CS8156
Contextual Info: CS4192 Single Air-Core Gauge Driver http://onsemi.com 16 1 SO–16L DWF SUFFIX CASE 751G PIN CONNECTION AND MARKING DIAGRAM 1 A WL, L YY, Y WW, W  Semiconductor Components Industries, LLC, 2001 July, 2001 – Rev. 5 1 16 COS+ COS– SO GND GND ST CS SCLK

marking code AHF

Contextual Info: SD4931 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 150 W min. with 14.8 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

sd4931

Contextual Info: SD4931 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

stac2942

Abstract: STAC2942B
Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

stac2942

Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

FERRITE TOROIDAL CORE DATA

Abstract: STAC2932B ferrite toroidal
Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

Contextual Info: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

FERRITE TOROIDAL CORE DATA

Abstract: 200 pF air variable capacitor
Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

stac2942

Abstract: STAC2942B FERRITE TOROID transistor marking code HF
Contextual Info: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

STAC2942F

Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
Contextual Info: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

Contextual Info: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS

sd2942

Abstract: SD2942w SD2942 equivalent RG316-25 POWER500 marking 16
Contextual Info: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS

DO-201 marking

Abstract: do-201 footprint 1N5908 diode 10-THERMAL transil diode A2E2D DO-201AA
Contextual Info: 1N5908 SM5908 Transil Features • Peak pulse power: – 1500 W 10/1000 s ■ Stand off voltage: 5 V ■ Unidirectional ■ Operating Tj max: 175 °C ■ High power capability at Tj max: – 1500 W (10/1000 µs) ■ JEDEC registered package outline

Contextual Info: 1N5908 SM5908 Transil Features • Peak pulse power: – 1500 W 10/1000 s ■ Stand off voltage: 5 V ■ Unidirectional ■ Operating Tj max: 175 °C ■ High power capability at Tj max: – 1500 W (10/1000 µs) ■ JEDEC registered package outline A

Bead 220 ohm 2.5A

Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
Contextual Info: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Arco 423

Abstract: choke vk200 sd2931-10w
Contextual Info: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS