ST L 9134 Search Results

IRF540N

Abstract: IRFP140N
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-91348B International I ö r Rectifier • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated IRL530N HEXFET Power MOSFET VDSS = 100V R ü S o n =

91341B

Abstract: irf540n 4.5v to 100v input regulator
Contextual Info: PD - 91341B IRF540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International

IRF540N

Abstract: 91341B 16ans 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91341B IRF540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD-91340A International IÖR Rectifier IRF520NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF520NS • Low-profile through-hole (IRF520NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V

IRF540NS

Abstract: IRF540NL 3F smd transistor MOSFET IRF540n AN-994 IRF540N 4.5v to 100v input regulator
Contextual Info: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing

IRL530N

Abstract: NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A
Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

T1 IRL530N

Abstract: IRL530N NIRF1010
Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

IRF540N

Abstract: IRFP140N 4.5v to 100v input regulator
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

IRL530N

Contextual Info: PD - 91348B IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

IRFP140N

Abstract: ISD 1400 d TO-247AC Package IRF540N 4.5v to 100v input regulator
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

IRF540NS D2PAK

Abstract: IRF540NL IRF540NS 3F smd transistor AN-994 IRF540N
Contextual Info: PD - 91342 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l D VDSS = 100V RDS on = 44mΩ G Advanced HEXFET Power MOSFETs from

Contextual Info: PD-91349B International 3SR Rectifier IRL530NS/L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRL530NS Low-profile through-hole (IRL530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss =100 V

IRLZ44NL

Abstract: AN-994 IRLZ44N IRLZ44NS L1000
Contextual Info: PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V

Johanson Dielectrics

Contextual Info: JOHANSON' — HLEGTTOlie htU U iS www.johansondielectrics.com High Temperature SMT Capacitors 200°C KEY FEATURES: For Use at Temperatures Up to 200°C Rated Working Voltages from 50V to 200V MLC Designs Utilizing Military Grade Ceramics Custom Sizes, Values, and Voltages Available

EPC1002PS

Abstract: EPC1021 EPC1015P EPC1007P EPC1000P EPC1002P EPC1005P EPC1006 EPC1007H EPC1008H
Contextual Info: P C A ELECTRONICS INC 55E D • bfiSSim 0000551 STD ■ PCA NOTICE SEE ORDER C F DAT A FOR ERRATA { I NF O R MA T I O N DC to DC Converters A broad range of DC/DC Converter products designed to support your company's Networking Applications. Features : Low Common Mode Noise, Input Filtering, Regulated & Unregulated and Input/Output Isolation.

T5A marking

Abstract: Sn-10Pb
Contextual Info: JOHANSON m muEmaes IíaaaS www.johansondielectrics.com 250°C R a t e d R a d ia l L e a d e d C a p a c it o r s K ey F e a t u r e s • For Use at Temperatures Up to 250°C • Rated Working Voltages from 50V to 100V » • Rugged Premolded Case with Hi-Temp Epoxy Fill

11 CT lan Transformer

Abstract: F80-51 isolation transformer TX15
Contextual Info: 10/100 LAN Interface Module for NIC/HUB Applications EPF8051G 1 Ideal for QSI6611/12 in applications requiring higher bandwidth • .Guaranteed.to .operate, with 8.mA.DC bias at 7 0°C on cable, side Complies with or exceeds IEEE 802.3,10 BT/100 BX Standards

ST Marking T03

Contextual Info: JOHANSON l i WSSSmarJ ’ www.johansondielectrics.com H ig h T e m p e r a t u r e S t a c k e d C a p a c it o r s K ey F e a tu r e s • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 50V to 200V Rugged Stack with Hi-Temp Lead-Attachment

Thomson-CSF POLYESTER capacitors

Abstract: 100nK63 BF014
Contextual Info: Contents Page Comparative table of the plastic film dielectric characteristics 4 Characteristics of the metallized polyester film dielectric capacitors 5 Type selection guide 10 How to order 11 Types & taping Radial le a d s -B F CPM-83 - B H (CPM-N) - BT (CPM85)

CAPACITOR SL 12K 3KV

Abstract: 0/CAPACITOR SL 12K 3KV
Contextual Info: Ceramic Disc Capacitors www.johansoncomponents.com Not active as of April 8, 2003 Ceramic Disc Capacitors Temperature Compensating – Class 1 High Dielectric Constant – Class 2 Semi-Conductor Type – Class 3 HOW TO ORDER Ceramic Disc Capacitors CC1 F

ct7 102m

Abstract: 102M SE ct81 capacitor capacitors ct81 CAPACITOR SL 12K 3KV capacitor ct7 ceramic disc .01 1kv z5u ct7 332m e 102m 3kV 102M 1KV CAPACITOR
Contextual Info: Ceramic Disc Capacitors www.johansoncomponents.com Not active as of April 8, 2003 Ceramic Disc Capacitors Temperature Compensating – Class 1 High Dielectric Constant – Class 2 Semi-Conductor Type – Class 3 HOW TO ORDER Ceramic Disc Capacitors CC1 F

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: PFC Boost Inductor ELECTRONICS INC. EPC3245-XX • Used as Power Factor Correction PFC Boost Inductor • Isolation Between Shield and Winding : 4.5K Vrms • All parts have Faraday Shield (except Toroid) • Isolation Between Winding : 1500 Vrms • UL 94V-0 Recognized Components