ST IC MARKING Search Results

178631

Abstract: E131
Contextual Info: Extract from the online catalog IC 2,5/16-ST-5,08 Order No.: 1786310 The figure shows a 10-position version of the product Plug component, Nominal current: 12 A, Rated voltage III/2 : 320 V,

E131

Contextual Info: Extract from the online catalog IC 2,5/ 4-ST-5,08 Order No.: 1786190 The figure shows a 10-position version of the product Plug component, Nominal current: 12 A, Rated voltage III/2 : 320 V,

Contextual Info: Rugged Environment DC-DC Converters <30 W IBEK DC-DC Converters 1 Watt-Family 1 Watt-Family In put to o u tp u t isolation te st voltag e up to 5 kV rrr,s 1 or 2 O u tpu ts: IC R 1, IXR 1, IY R 1, IZ R 1 1, 2 or 4 O u tp u ts : IW R 1 Extremely high isolation test voltages

Contextual Info: Final Electrical Specifications r r u v LTC1655L m TECHNOLOGY 16-Bit Rail-to-Rail M ic ro p o w e r D AC in SO-8 P a c k a g e A u g u st 1999 FCRTURCS D C S C R IP TIO n • 16-Bit Monotonicity Over Temperature ■ 3V Single Supply Operation ■ Deglitched Rail-to-Rail Voltage Output

BUl312

Abstract: BUL312FH
Contextual Info: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH „ „ „ „ „ „ „ Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

N888

Abstract: STN888
Contextual Info: STN888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR • ■ ■ ■ ■ Ordering Code Marking STN888 N888 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C CURRENT GAIN, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT SOT-223 PLASTIC PACKAGE FOR

N1802

Abstract: STN1802
Contextual Info: STN1802 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking STN1802 N1802 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM

marking 36

Abstract: MMBT3906 TRANSISTOR MINIATURE MMBT3904 MMBT3906 36 MMBT3906 SOT-23
Contextual Info: MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904

PN2907A

Abstract: 224 pn2907a PN2222A to-92 PN2222A PN2907A-AP
Contextual Info: PN2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking PN2907A PN2907A TO-92 / Bulk PN2907A-AP PN2907A TO-92 • ■ ■ Package / Shipment / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY

MMBT2222A

Abstract: MMBT2907A marking M22 MMBT2222A SOT23 transistor M22 marking
Contextual Info: MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A

N951

Abstract: JESD97 STN951
Contextual Info: STN951 Low voltage fast-switching PNP power transistor Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package

2200V High voltage emitter switched bipolar transistor

Abstract: C03DE220HV JESD97 STC03DE220HV emitter switched bipolar transistor
Contextual Info: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 1V 3A 0.33Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω

STN790A

Abstract: JESD97 N790A
Contextual Info: STN790A Medium Current, High Performance, Low Voltage PNP Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 3A continuous collector current ■ 40V breakdown voltage V(BR CER) ■ SOT-223 plastic package for surface mounting

2STR1230

Abstract: 2STR2230 JESD97
Contextual Info: 2STR1230 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■

STC04IE170HP

Abstract: C04IE170HP JESD97
Contextual Info: STC04IE170HP Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

MOSFET 1200v 3a

Abstract: C03DE170HV JESD97 STC03DE170HV
Contextual Info: STC03DE170HV Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 1V 1.8A 0.55Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700 V

2STX2220

Abstract: JESD97 X2220
Contextual Info: 2STX2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description

Contextual Info: MJE172 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device Applications ■ Audio amplifier ■ High speed switching applications  Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology

mosfet 1500v

Abstract: BA157 C08DE150HV JESD97 STC08DE150HV mosfet 1500v for smps bipolar transistor 1500v
Contextual Info: STC08DE150HV Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V

TO247-4L

Abstract: C20DE90HV JESD97 STC20DE90HV DC DC converter 1A 400V TO 220 Package SMPS forward
Contextual Info: STC20DE90HV Hybrid emitter switched bipolar transistor ESBT 900 V - 20 A - 0.06 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 1.2 V 20 A 0.06 Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■

Contextual Info: STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE sat = 1.55 V (typ.) @ IC = 30 A

2STN2540

Abstract: JESD97 N2540
Contextual Info: 2STN2540 Low voltage fast-switching PNP power bipolar transistor Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package

freewheeling diode 5A

Abstract: B13007D JESD97 STB13007DT4 T0-263
Contextual Info: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode

JESD97

Abstract: STE50DE100
Contextual Info: STE50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 Ω General features VCS ON IC 1.3 V 50 A RCS(ON) 0.026 • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz