ST DIODE MARKING EE Search Results

Contextual Info: STTA306B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS 3 I f a v 600 V V rrm trr 20 ns (typ) V f (max) A 1.65 V FEATURES AND BENEFITS • SPECIFICTO ’’FREEWH EEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST, AND SOFT RECOVERY

Contextual Info: STL2N80K5 N-channel 800 V, 3.7 Ω typ., 2 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV Datasheet - preliminary data Features Order code VDS RDS on max. ID STL2N80K5 800 V 4.9 Ω 2A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)

Contextual Info: STL18N65M5 N-channel 650 V, 0.215 Ω typ., 15 A MDmesh V Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − preliminary data Features 1. 1 Order code VDS RDS on max. ID STL18N65M5 710 V 0.240 Ω 15 A(1) The value is rated according to Rthj-case and limited

bosch ecu 0 261 200 218 connection diagram

Abstract: CK 77-1 3 94V-0 WK2 94V0 KL SN 102 94v-0 lcd wiring diagram relay ECU bosch ME 7.4.9 circuit diagram used for pick and place colour sensing robot bosch ecu 0 261 200 100 connection diagram bosch 0 261 204 243 ecu circuit wk2 94v-0 0838
Contextual Info: Canada Wieland Electric Inc. 2889 Brighton Road Oakville, Ontario L6H 6C9 Phone: 905 829-8414 Fax: (905) 829-8413 e-mail: oakville@wielandinc.com On the Internet: www.wielandinc.com DIN rail terminal blocks • with screw connection • with spring connection

IRF9540SPBF

Abstract: diode k 1140 D 472
Contextual Info: PD - 95699 IRF9540SPbF • Lead-Free www.irf.com 9/10/04 IRF9540SPbF 2 www.irf.com IRF9540SPbF www.irf.com 3 IRF9540SPbF 4 www.irf.com IRF9540SPbF www.irf.com 5 IRF9540SPbF 6 www.irf.com IRF9540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations

AN-994

Abstract: IRG4BC10SD-L IRG4BC10SD-S
Contextual Info: PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

IRFZ46

Abstract: AN-994 IRFZ46L IRFZ46S "thermal via" PCB D2PAK
Contextual Info: PD - 9.922A IRFZ46S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ46S Low-profile through-hole (IRFZ46L) 175°C Operating Temperature Fast Switching D VDSS = 50V RDS(on) = 0.024Ω G ID = 72A† S Description Third Generation HEXFETs from International Rectifier

2SK18

Abstract: 2SK1849 EN4501
Contextual Info: Ordering num ber:EN45 01 2SK1849 N o.4501 N -C hannel MOS Silicon FET SAiYO i Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M axim um R a tin g s at Ta = 25°C

Contextual Info: Schottky Barrier Diode Diode Module Wtm D120SC4M OUTLINE 40 V 120A Feature V 3 I \j • • High lo Rating-Module-PKG .— • Low V f • fiV f • Small B jc Main Use • High Power Switching Regulator • DC/DC Z\yjï-S • DC/DC Converter • • Main Frame

STM8S103FX

Abstract: stm8sp103 STM8S103K3 STM8S103F3 STM8S103Kx STM8S103 UFQFPN20-pin stm8s103xx STM8S103F2 adc example sTM8s
Contextual Info: STM8S103K3 STM8S103F3 STM8S103F2 Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM,10-bit ADC, 3 timers, UART, SPI, I²C Interrupt management Nested interrupt controller with 32 interrupts LQFP32 7x7 UFQFPN32 5x5 • • Up to 27 external interrupts on 6 vectors

IRF9Z14L

Abstract: IRF9Z14S marking 67A
Contextual Info: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω

marking lt

Abstract: 2SD2028 IC 2803
Contextual Info: Ordering number: EN 2803 No.2803 // 2SD2028 NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amp Applications Features - With Zener diode 11 ± 3V between collector and base - Large current capacity •Low collector to emitter saturation voltage

Equivalent IRF 44

Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRF7663

Contextual Info: PD-91866B IRF7663 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS(on) = 0.020Ω

IRF7555

Contextual Info: PD -91865B IRF7555 HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = -20V RDS(on) = 0.055Ω

AN-994

Abstract: IRFBF20 IRFBF20L IRFBF20S
Contextual Info: PD - 9.1665 IRFBF20S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBF20S Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D

AN-994

Abstract: IRFZ48 IRFZ48L IRFZ48S
Contextual Info: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier

bly 93a

Abstract: irf630npbf AN-994 IRF630NL IRL3103L
Contextual Info: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET

IRF7403

Abstract: IRF7413 IRF7603 IRF9410
Contextual Info: PD - 9.1562A IRF9410 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V

IRF7530

Abstract: 2920A 8D12
Contextual Info: PD-93760A IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω

LX 2260 A

Abstract: tic 2260
Contextual Info: D at ash ee t A S7 6 2 0 5 00 m A H y st e r e tic Hig h Vo lta g e S t ep - D o w n Co n ve r t e r w it h D u a l P o w e r M o n ito r 1 General Description 2 Key Features Low quiescent current for efficient partial load operation The AS7620 is an easy-to-use, high-efficiency, high-voltage,

AN-994

Abstract: IRF820A IRF820AL IRF820AS
Contextual Info: PD - 95533 IRF820ASPbF IRF820ALPbF SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

TRANSISTOR marking ar code

Abstract: AN1001 AN-994 IRF730A IRL3103L
Contextual Info: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

AN-994

Abstract: IRFZ48NL IRFZ48NS IRL3103L n mosfet low vgs
Contextual Info: PD - 95125 l l l l l l l IRFZ48NSPbF IRFZ48NLPbF Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from