ST DIODE MARKING CODE 724 Search Results

SEMTECH MARKING

Abstract: 1SS315 DIODE A Schottky SOD-323
Contextual Info: 1SS315 SILICON EPITAXIAL SCHOTTKY PLANAR DIODE . PINNING DESCRIPTION PIN APPLICATIONS ˙UHF Band Mixer Applications 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25OC Characteristics

st marking code

Abstract: 1SS315
Contextual Info: 1SS315 SILICON EPITAXIAL SCHOTTKY PLANAR DIODE . PINNING DESCRIPTION PIN APPLICATIONS ˙UHF Band Mixer Applications 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25OC Characteristics

"MARKING CODE ST"

Abstract: 1SS315
Contextual Info: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • UHF Band Mixer PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value

st c 323 a

Abstract: 1SS315 st diode marking code 724
Contextual Info: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • UHF Band Mixer PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value

STL9N3LLH5

Abstract: st diode marking code 724
Contextual Info: STL9N3LLH5 N-channel 30 V, 0.015 Ω typ., 9 A STripFET V Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet — production data Features Order code VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb •

st diode marking code 724

Abstract: STL-10 STL10N3LLH5
Contextual Info: STL10N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL10N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

FL014

Abstract: FL014 Example AN-994 IRFL9014 IRFL4310
Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier

Contextual Info: STL50N3LLH5 N-channel 30 V, 0.015 Ω, 50 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL50N3LLH5 30 V < 0.019 Ω 50 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STL9N3LLH5 N-channel 30 V, 0.015 Ω typ., 9 A STripFET V Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet — production data Features Order code VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) ) s ( ct 1. The value is rated according Rthj-pcb

FL014

Abstract: IRFL214PBF IRF 100A 314P AN-994 EIA-541 IRFL014 PD-95318 International Rectifier TO-261AA
Contextual Info: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

95320

Abstract: ST 95320 FL014 IRF 100A AN-994
Contextual Info: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier

FL014

Abstract: AN-994 irfl110pbf IRFL014 314P EIA-541 519 SOT-223
Contextual Info: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description

IRFL9014PBF

Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630
Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A

MARKING 93 SOT-223

Abstract: fl014 314P AN-994 EIA-541 IRFL014 sot-223 93 marking code 27a sot
Contextual Info: PD - 95387 IRLL014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A

DC-12

Abstract: IEC 60947-5-5 vde-0660 SELECTOR SWITCH
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 44 Switches and Indicators 44 Contents 44 Description . 3 Product Assembly . 4

STS11N3LLH5

Abstract: 001411A
Contextual Info: STS11N3LLH5 N-channel 30 V, 0.012 Ω, 11 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS on max ID STS11N3LLH5 30 V < 0.014 Ω 11 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STL9N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

STS8DN3LLH5

Abstract: 8dn3ll
Contextual Info: STS8DN3LLH5 Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS on max ID STS8DN3LLH5 30 V < 0.019 Ω 10 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

STL51N3LLH5

Contextual Info: STL51N3LLH5 N-channel 30 V, 0.0105 Ω, 51 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Type VDSS RDS on max ID STL51N3LLH5 30 V < 0.0145 Ω 51 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

STL50N3LLH5

Contextual Info: STL50N3LLH5 N-channel 30 V, 0.015 Ω, 50 A, PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL50N3LLH5 30 V < 0.019 Ω 50 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STS11N3LLH5 N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET V Power MOSFET Features Type VDSS STS11N3LLH5 30 V RDS on max ID 5 < 0.0132 Ω 11 A (1) 8 1. The value is rated according Rthj-pcb 4 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier

VISHAY SOT 223 DATE CODE

Abstract: VISHAY SOT LOT CODE
Contextual Info: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

FL014

Abstract: marking code vishay soic 314P AN-994 EIA-541 IRFL014 International Rectifier TO-261AA
Contextual Info: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description