ST BUX C Search Results

transistors bu 407

Abstract: Transistors BD 330 bdx 330
Contextual Info: TEXAS IN S T R -COPTO} ^2 DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 ÔÔ61726 TEXAS INSTR OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS -T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 °C Case Temperature •

BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Contextual Info: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

transistor bux 39

Abstract: transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51
Contextual Info: BUX 51 BUX 51 N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E TENTATIVE DATA N O T IC E P R O V IS O IR E Driver stage for high voltage power transistor 160 V BUX 51 N 200 V (BUX 51) 3,5

bux c

Abstract: bux diode BUX29 BUX28 Q62702 Q62901-B50 Q62702-U258
Contextual Info: BUX 28 BUX 29 N PIM -Silizium -Darlington-Leistungstransistoren B U X 28 und B U X 29 sind dreifachdiffundierte monolithische NPN-Darlington-Leistungstransistoren im Gehäuse 3 A 2 D IN 41 872 TO-3 . Die Kollektoren sind mit dem Gehäuse elektrisch verbunden. Die Widerstände zwischen Basis und den Emittern sowie die Invers­

TRANSISTOR K 135 J 50

Abstract: BUX 41 BUX41 transistor BUX 48
Contextual Info: NPN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N SIS TO R S IL IC IU M NPN, MESA T R IP LE D IF F U S E ^ P re fe rre d device D isp o sitif recommandé High speed, high curre n t, high pow er transistor Transistor de puissance rapide, fo rt courant

BUX51

Abstract: transistor 3005 ET 3005 transistor bux 39 transistor 3005 2 NPN BUX51 transistor BUX 22 bux c pilote 5mhz L 3005 TRANSISTOR
Contextual Info: BUX 51 BUX 51 N NPN S ILIC O N TR A N S IS TO R , T R IP L E D IF F U S E D MESA T R A N S IS T O R N P N S IL IC IU M , M E S A T R IP L E D I F F U S E T E N T A T IV E D A T A N O T I C E P R O V IS O IR E Driver stage fo r high voltage power transistor

transistor BUX 48

Abstract: bux 42 emetteur BUX42 transistor BUX
Contextual Info: *BUX42 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N S IS T O R S IL IC IU M NPN. M ESA T R IP L E D IF F U S E ^ P re ferred device D isp o sitif recommandé High speed, high curre n t, high pow er transistor T ransistor de puissance rapid e, f o r t c o u ra n t

Contextual Info: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current

D895

Abstract: BD 895 bdw 34 a
Contextual Info: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current

BU 450 bdx

Abstract: l75b
Contextual Info: TEXAS INSTR Î0PTÔ3D F f lT b l7 5 b Ö 9 6 1 7 2 6 T EX A S IN S T R <OPTO) 0 0 3 ^ ^ 62C 3 6 6 6 9 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS T NOVEMBER 1983 - REVISED OCTOBER 1984 4 0 W at 2 5 ° C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current

BUX40

Abstract: transistor BUX 48 bux 40 sonde de temperature
Contextual Info: *BU X 40 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR AN S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^ P r e fe rr e d device D is p o s itif re c o m m a n d é High speed, high current, high pow er transistor T ransistor de puissance rapide, f o r t couran t

g3jc

Contextual Info: INSTR -COPTO} bE »F| flìtilTEh D03tiLll 62C 36611 ^§5T756~~TE>fS5 TRSTR 50P T0 ' T -3 3 -3 1 BDW24, BDW24A, BDW24B, BDW24C P-N-P SILICON POWER DARLINGTONS * RE V ISE D OC TO BER 1984 50 W at 25°C Case Temperature 6 A Continuous Collector Current Min hFE of 750 at 2 A, 3 V

Contextual Info: TE X A S IN ST R -COPTO! 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO D 62C 3 6 6 4 9 BUX48, BUX48A N-P-N SILICON POW ER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature • 15 A Continuous Collector Current •

X53A

Abstract: BDX63A
Contextual Info: texas~ instr -c o p t o j bs dF | 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current

RCA 40874

Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2

RCA 40636 transistor

Abstract: rca 40636 rca 40327 RCA 40325 40327 rca RCA 2N3055 transistor 2N3055 RCA rca 40363 RCA 40321 BUX 115
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í lt > 1 A max. Pt - 10 W max. jTO-39»* lc > -1 A max. Py - 10 W max. (TO-39 * 32 x 32 a 42x42 42x42

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

BU 450 bdx

Abstract: bux81
Contextual Info: TEXAS INSTR COPTO} b5 DFIflTblTab 003bbS7 □ 62C 8 9 6 1 7 2 6 TEXAS INSTR < Ö P T Ü 7 3Ò 657 BUX80 BUX81 N-P-N SILICON POWER TRANSISTORS / ~ J 3 - / 3 OCTOBER 1982 - REVISED OCTOBER 1984 150 W at 2 5 ° C C ase Temperature 10 A Continuous Collector Current

C 828 Transistor

Abstract: transistor 828 transistor c 828 B 828 transistor 3ALF 828 transistor BUX50 iC 828 Transistor C3F5A C 828 a Transistor
Contextual Info: BUX 50 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E T E N T A T IV E D A T A N O T IC E P R O V IS O IR E Driver stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance

BUX54

Abstract: D 843 Transistor
Contextual Info: BUX 54 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N S IS T O R N P N S IL IC IU M . M ESA T R IP L E D IF F U S E T E N T A T IV E D A T A N O T IC E P R O V IS O IR E D river stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance

Contextual Info: PACE1750AE SINGLE CHIP, 40MHz, ENHANCED CMOS 16-BIT PROCESSOR 4 -

752 transistor

Abstract: TRANSISTOR C-111 bux THOMSON
Contextual Info: *BUX 25 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IFF U S E D TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E ^ P r e fe rr e d device D is p o s itif re c o m m a n d é High speed, high voltage,high power transistor Transistor de puissance rapide, hau te tension

2SA1461

Abstract: IS955
Contextual Info: '> i; y= 7 z i > S ilic o n > ì > ^ T r a n s is to r 2SA1461 P N P X \ £ 9 * r ì s 7 V M '> 1) ^ > ¡s s J i ì & m m a j : x / ' ï ï È m ì > 7 * 9 x + y * > ? m W l « O X j -y 7 ' j S Æ * s' i S ^ o 2 .8 + 0 .2 o v 3 ? ;m fn m jE * * /h 3 1 .5

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren