ST BUX C Search Results

transistors bu 407

Abstract: Transistors BD 330 bdx 330
Contextual Info: TEXAS IN S T R -COPTO} ^2 DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 ÔÔ61726 TEXAS INSTR OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS -T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 °C Case Temperature •

BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Contextual Info: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

transistor bux 39

Abstract: transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51
Contextual Info: BUX 51 BUX 51 N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E TENTATIVE DATA N O T IC E P R O V IS O IR E Driver stage for high voltage power transistor 160 V BUX 51 N 200 V (BUX 51) 3,5

TRANSISTOR K 135 J 50

Abstract: BUX 41 BUX41 transistor BUX 48
Contextual Info: NPN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N SIS TO R S IL IC IU M NPN, MESA T R IP LE D IF F U S E ^ P re fe rre d device D isp o sitif recommandé High speed, high curre n t, high pow er transistor Transistor de puissance rapide, fo rt courant

BUX51

Abstract: transistor 3005 ET 3005 transistor bux 39 transistor 3005 2 NPN BUX51 transistor BUX 22 bux c pilote 5mhz L 3005 TRANSISTOR
Contextual Info: BUX 51 BUX 51 N NPN S ILIC O N TR A N S IS TO R , T R IP L E D IF F U S E D MESA T R A N S IS T O R N P N S IL IC IU M , M E S A T R IP L E D I F F U S E T E N T A T IV E D A T A N O T I C E P R O V IS O IR E Driver stage fo r high voltage power transistor

transistor BUX 48

Abstract: bux 42 emetteur BUX42 transistor BUX
Contextual Info: *BUX42 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N S IS T O R S IL IC IU M NPN. M ESA T R IP L E D IF F U S E ^ P re ferred device D isp o sitif recommandé High speed, high curre n t, high pow er transistor T ransistor de puissance rapid e, f o r t c o u ra n t

Contextual Info: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current

D895

Abstract: BD 895 bdw 34 a
Contextual Info: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current

BUX40

Abstract: transistor BUX 48 bux 40 sonde de temperature
Contextual Info: *BU X 40 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR AN S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^ P r e fe rr e d device D is p o s itif re c o m m a n d é High speed, high current, high pow er transistor T ransistor de puissance rapide, f o r t couran t

g3jc

Contextual Info: INSTR -COPTO} bE »F| flìtilTEh D03tiLll 62C 36611 ^§5T756~~TE>fS5 TRSTR 50P T0 ' T -3 3 -3 1 BDW24, BDW24A, BDW24B, BDW24C P-N-P SILICON POWER DARLINGTONS * RE V ISE D OC TO BER 1984 50 W at 25°C Case Temperature 6 A Continuous Collector Current Min hFE of 750 at 2 A, 3 V

Contextual Info: TE X A S IN ST R -COPTO! 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO D 62C 3 6 6 4 9 BUX48, BUX48A N-P-N SILICON POW ER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature • 15 A Continuous Collector Current •

X53A

Abstract: BDX63A
Contextual Info: texas~ instr -c o p t o j bs dF | 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current

Contextual Info: .7*113237 0026=137 3 W Ê Fi I '33>~iS S C S - T H O M S O N [M û œ a J tm M M S S G S-TH0MS0N BUX 25 3GE D NPN SILICON TRANSISTOR • HIGH SPEED, HIGH VOLTAGE, HIGH POWER TRANSISTOR ■ SWITCHING AND AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Sym bol

RCA 40874

Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2

C 828 Transistor

Abstract: transistor 828 transistor c 828 B 828 transistor 3ALF 828 transistor BUX50 iC 828 Transistor C3F5A C 828 a Transistor
Contextual Info: BUX 50 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E T E N T A T IV E D A T A N O T IC E P R O V IS O IR E Driver stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance

Contextual Info: PACE1750AE SINGLE CHIP, 40MHz, ENHANCED CMOS 16-BIT PROCESSOR 4 -

752 transistor

Abstract: TRANSISTOR C-111 bux THOMSON
Contextual Info: *BUX 25 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IFF U S E D TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E ^ P r e fe rr e d device D is p o s itif re c o m m a n d é High speed, high voltage,high power transistor Transistor de puissance rapide, hau te tension

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

intel 8276

Abstract: 8276H display bs-6 8276-2 BUX 88 MCS-51 MCS-85 210668 Intel 8276-2
Contextual Info: in téT 8276H SMALL SYSTEM CRT CONTROLLER • Programmable Screen and Character Format ■ ■ ■ ■ ■ ■ 6 Independent Visual Field Attributes ■ Cursor Control 4 Types ■ MCS-51 , MCS-85®, IAPX 86, and IAPX 88 Compatible Dual Row Buffers Single + 5V Supply

2sa 1303

Abstract: SMD IC ts 3202 BUX 0715
Contextual Info: M M O T O R O L A Military 10576 Hex “D” Master-Slave Flip-Flop ELECTRICALLY TESTED PER: JM 38510/06103 MP0 mini The 10576 contains six high-speed, master slave type “ D" flip-flops. Clocking is common to all six flip-flops. Data is entered into the master when the clock is

BUX 127

Abstract: 8550201 8X305 MICROCONTROLLER 16 BIT J85502 t2g memory 8550201x 855020
Contextual Info: 0%20J k DATE D ES C R IPTIO N LTR A REVISIONS Change to m i l i t a r y draw ing fo rm a t. Change Q dim ension o f case o u tlin e Y. Add d e v ic e ty p e 02. Add U package f o r d e vice types 01 and 02, change maximum power d is s ip a t io n in 1 .3 , remove

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: HD64180S -NPU Network Processing Unit • DESCRIPTION The HD64180S, network processing unit (N PU ), provides multipurpose high-speed com m unication control functions on a single LSI chip. The HD64180S offers high perform ance com m unication protocol process­

TMS3401

Abstract: SPVU001 MD653 SPVU001B ls 010s 100s MS3401
Contextual Info: TM S3 4 0 1 0 GRAPHICS SY ST EM PROCESSOR SPVS002C • • • TOP VIEW 1 3 2 ns . . ( T M S 3 4 0 1 0 6 0 ) 1 6 0 ns . . ( T M S 3 4 0 1 0 - 5 0 ) 2 0 0 ns . (T M S 3 4 0 1 0 -4 0 ) Fully P rog ra m m a b le 32 -B it General-Purpose P roc e ss or w i t h 1 2 8 - M e g a b Y tc A d d re s s