ST 9431 Search Results

C166S

Abstract: PEC 302 StK 412 230 stk 430 130 C166 RL10 RL11 RL12 RL13 bc 541
Contextual Info: Use r Ma nual, V 1.7, Ja nuary 2001 C166S V2 1 6 - B i t M ic r o c o n t r o l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2001-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

B5218

Abstract: uc 1201a 14001-1
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9

Contextual Info: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number

T0257AA

Abstract: IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965
Contextual Info: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number

Contextual Info: PD - 94318B IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number

Contextual Info: PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHz High Operating Frequency Switching-loss Rating includes all "tail" losses

Contextual Info: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

st 9431

Abstract: ISO7637 VND830LSP VND830LSP13TR
Contextual Info: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

Contextual Info: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

Contextual Info: PD -94313 IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

IRG4MC30F

Contextual Info: PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

Contextual Info: PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

IRG4MC30F

Contextual Info: PD -94313B IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

st 9431

Contextual Info: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V ) s ( ct 10 1. Per each channel. 1 CMOS compatible inputs • Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

IRHY57133CMSE

Abstract: T0-257AA
Contextual Info: PD - 94318A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57133CMSE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHY57133CMSE Radiation Level RDS(on) 100K Rads (Si) 0.09Ω ID 18A* T0-257AA International Rectifier’s R5TM technology provides

Contextual Info: PD - 94318 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57133CMSE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHY57133CMSE Radiation Level RDS(on) 100K Rads (Si) 0.09Ω ID 18A* T0-257AA International Rectifier’s R5TM technology provides

str 5707

Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification

IRHY593230CM

Abstract: IRHY597230CM T0-257AA
Contextual Info: PD - 94319A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5TM technology provides

Contextual Info: PD - 94319B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5 TM technology provides

IRHY593230CM

Abstract: IRHY597230CM T0-257AA
Contextual Info: PD - 94319B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5 TM technology provides

jd 1803 b 107

Abstract: jd 1803 IC jd 1803 19 B sung wei jd 1803 b jd 1803 b 106 94-4980 bay trail l samsung 943 ky 708
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest Northeast 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 119 Russell Street

CH-5430

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.SA North Central Northwest Northeast 1 19 R ussell Street Littleton, M A 0 1 4 6 0 TE L: 5 0 8 4 8 6 -0 7 0 0 FA X : (5 0 8 ) 4 8 6 -8 2 0 9 3 0 0 Park Boulevard Suite 2 1 0 Itasca, IL 6 0 1 4 3 -2 6 3 6 TEL: (7 0 8 ) 7 7 5 -1 0 5 0

240-22

Abstract: 84107
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 Southwest South Central

sung wei

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708)775-1058 3655 North First Street San José, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 South Central Southwest