ST 9427 Search Results

m8805/23-001

Abstract: ST 9427 9h2t 19PA39-TL M8805 2PB11-T2 C0836 058REF
Contextual Info: CATALOG m icro sw ttch a Honeywell Division F EO MFC CODE 9 H 2 t A S S E M B LY PUSHBUTTON SWITCH 11 ST 1NG 2PB11-T2 FAA - PMA CM H s 5 CL o GATAI OG L I ST I NG CM C'J REVISIONS A C082865 JA L 25 APR 96 B C083692 DLT 24 JAN 97 c C093156 GJW 20 JUL 98 COD 93593

Sitronix 7598

Abstract: 3842 PWM power supply application note ic 3842 datasheet Monitor switched mode Power supply 3842 PWM 8 pin ic 3842 ic 4558 pin diagram CD 4016 PIN DIAGRAM IC 4558 CIRCUIT DIAGRAM 2482 H Transistor BC 547, CL 100
Contextual Info: ST Sitronix ST7632 4K Color Dot Matrix LCD Controller/Driver 1. INTRODUCTION The ST7632 is a driver & controller LSI for 4K color graphic dot-matrix liquid crystal display systems. It generates 396 Segment and 132 Common driver circuits. This chip is connected directly to a microprocessor, accepts Serial Peripheral

C166S

Abstract: PEC 302 StK 412 230 stk 430 130 C166 RL10 RL11 RL12 RL13 bc 541
Contextual Info: Use r Ma nual, V 1.7, Ja nuary 2001 C166S V2 1 6 - B i t M ic r o c o n t r o l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2001-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

Contextual Info: PD -94275B 35SCGQ060 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 60V Major Ratings and Characteristics Characteristics Description/Features The 35SCGQ060 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated

ST 9427

Abstract: 35SCGQ060
Contextual Info: PD -94275B 35SCGQ060 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 60V Major Ratings and Characteristics Characteristics Description/Features The 35SCGQ060 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated

c 1384

Abstract: 35SCGQ060
Contextual Info: PD -94275A 35SCGQ060 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 60V Major Ratings and Characteristics Characteristics Description/Features 35SCGQ060 Units IF AV 35 A VRRM (Per Leg) 60 V IFSM @ tp = 8.3ms half-sine (Per Leg) 400 A VF @ 17.5Apk, T J =125°C

35SCGQ060

Contextual Info: PD -94275 35SCGQ060 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 60V Major Ratings and Characteristics Characteristics Description/Features 35SCGQ060 Units IF AV 35 A VRRM (Per Leg) 60 V IFSM @ tp = 8.3ms half-sine (Per Leg) 400 A 0.61 V VF @ 17.5Apk, T J =125°C

Contextual Info: PD-94275B 35SCGQ060 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 60V Major Ratings and Characteristics Characteristics Description/Features The 35SCGQ060 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of HiRel environments. It is packaged in the hermetic isolated

irf 1640

Abstract: IRL5NJ7413
Contextual Info: PD - 94271B IRL5NJ7413 30V, N-CHANNEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 Product Summary Part Number BVDSS IRL5NJ7413 30V RDS(on) 0.014Ω ID 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRL5NJ7413

Contextual Info: PD - 94271A IRL5NJ7413 30V, N-CHANNEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 Product Summary Part Number IRL5NJ7413 RDS(on) 0.014Ω BVDSS 30V ID 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94271B IRL5NJ7413 30V, N-CHANNEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 Product Summary Part Number BVDSS IRL5NJ7413 30V RDS(on) 0.014Ω ID 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF7822

Abstract: I*7822 ST 9427 10BQ040
Contextual Info: PD - 94279 IRF7822 HEXFET Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented

Contextual Info: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

Contextual Info: PD - 94278A IRF7420 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS RDS on max ID -12V 14mΩ@VGS = -4.5V 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V -11.5A -9.8A -8.1A Description These P-Channel HEXFET® Power MOSFETs from

EIA-541

Abstract: F7101 IRF7101 IRF7420 Ultra Low rds
Contextual Info: PD - 94278A IRF7420 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS RDS on max ID -12V 14mΩ@VGS = -4.5V 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V -11.5A -9.8A -8.1A Description These P-Channel HEXFET® Power MOSFETs from

IRG4MC50F

Contextual Info: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

Contextual Info: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency

TRANSISTOR 545

Abstract: IRG4MC50U
Contextual Info: PD -94273 IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency

IRHNJ9130

Abstract: um 44 diode irf 343 IRHNJ93130
Contextual Info: PD - 94277 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ9130 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ9130 100K Rads (Si) IRHNJ93130 300K Rads (Si) RDS(on) 0.29Ω 0.29Ω ID -11A -11A

Contextual Info: PD - 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on max ID 0.040Ω 56A 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to

irfb260n

Abstract: IRF AN1001 marking 34A AN1001 IRF1010 4.5v to 100v input regulator
Contextual Info: PD - 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on max ID 0.040Ω 56A 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to

TO-254AA Package

Abstract: IRG4MC50F
Contextual Info: PD -94274 IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

marking 34A

Abstract: AN1001 IRF1010 IRFB260N 9427 IRF*260 5M-19
Contextual Info: PD - 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on max ID 0.040Ω 56A 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to

Contextual Info: PD - 94277 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ9130 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ9130 100K Rads (Si) IRHNJ93130 300K Rads (Si) RDS(on) 0.29Ω 0.29Ω ID -11A -11A