ST 54003 Search Results
ST 54003 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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10088054-003LF |
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HCI® Connector System, Power Supply Connectors, 10DC+24S Right Angle Header. | |||
67954-003LF |
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PV® Wire-to-Board Connector System, Wire to Board, 2.54mm (0.1inch) Centerline Crimp-to-Wire PV Receptacle Housing, Single Row, Polarized. | |||
69254-003LF |
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Modular Jack, Input Output Connectors, Cat 3, Vertical, Through Mount, Unshielded Diamond Peg, 6 Positions, 1 Port | |||
10106265-4003A01LF |
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PwrBlade+®,Power Connectors, Right Angle, Receptacle, 2ACP 12S 2ACP | |||
10157554-00341LF |
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Minitek® Multipitch™,1.25mm Crimp-to-Wire Connector Platform, Cable Receptacle, 3 Position, Without TPA & CPA |
ST 54003 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DB-54003L-470
Abstract: JESD97 PD54003L-E PD54003L
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DB-54003L-470 PD54003L-E 470MHz DB-54003L-470 JESD97 PD54003L-E PD54003L | |
PD54003L
Abstract: PD5400
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DB-54003L-930 PD54003L DB-54003L-930 PD5400 | |
PD54003LContextual Info: DB-54003L-512 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 54% - 63% ■ Load mismatch: 20:1 |
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DB-54003L-512 PD54003L DB-54003L-512 | |
PD54003LContextual Info: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69% |
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DB-54003L-175A PD54003L 175MHz DB-54003L-175A DB-54003-470 PD54003 | |
DB-54003L-930
Abstract: JESD97 PD54003L
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DB-54003L-930 PD54003L DB-54003L-930 JESD97 PD54003L | |
PD5400Contextual Info: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 67% - 75% |
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DB-54003L-175A PD54003L 175MHz DB-54003L-175A PD5400 | |
DB-54003L-512
Abstract: JESD97 PD54003L
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DB-54003L-512 PD54003L DB-54003L-512 JESD97 PD54003L | |
EEVHB1V100P
Abstract: BZX284C5V1 DB-54003L-175A EXCELDRC35C GRM42-6C0G102J50 PD54003L
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DB-54003L-175A PD54003L 175MHz DB-54003L-175A EEVHB1V100P BZX284C5V1 EXCELDRC35C GRM42-6C0G102J50 PD54003L | |
Contextual Info: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1 |
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DB-54003-470 PD54003 470MHz DB-54003-470 | |
BZX284C5V1
Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
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DB-54003L-175A PD54003L DB-54003L-175A BZX284C5V1 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L | |
smd c8f
Abstract: GRM1885C1H3R9CZ01 PD54003L murata REEL label RF amplifer smd c2f AB-54003L-512 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E
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AB-54003L-512 PD84001 PD54003L-E 10dBm -70dBc AB-54003L-512 STEVAL-TDR001V1 AB-54003L-51and smd c8f GRM1885C1H3R9CZ01 PD54003L murata REEL label RF amplifer smd c2f GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E | |
diode 1-35 j2
Abstract: DB-54003L-175 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
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DB-54003L-175 PD54003L DB-54003L-175 diode 1-35 j2 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L | |
capacitor 330pF ATC
Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-54003-470 EXCELDRC35C PD54003 355nH
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DB-54003-470 PD54003 470MHz DB-54003-470 capacitor 330pF ATC rf power amplifier circuit by 400-470mhz 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C PD54003 355nH | |
j655
Abstract: 151j CAPACITOR grm42-6 cog 101 DB-54003L-235 EEVHB1V100P EXCELDRC35C GRM42-6 PD54003L 102J 100B390JW
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DB-54003L-235 PD54003L 235MHz DB-54003L-235 j655 151j CAPACITOR grm42-6 cog 101 EEVHB1V100P EXCELDRC35C GRM42-6 PD54003L 102J 100B390JW | |
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PD54003L
Abstract: DB-54003L-175 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 resistor 1K 5w GRM42-6C0G121J50 diode smd 1-35 j2
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DB-54003L-175 PD54003L DB-54003L-175 PD54003L DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 resistor 1K 5w GRM42-6C0G121J50 diode smd 1-35 j2 | |
Diode W316
Abstract: 102J DB-54003L-512 EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460
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DB-54003L-512 PD54003L DB-54003L-512 Diode W316 102J EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460 | |
C2f SOT-89
Abstract: AB-54003L-512 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L PD54003L-E PD84001 EP 603
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AB-54003L-512 PD84001 PD54003L-E 10dBm -70dBc AB-54003L-512 STEVAL-TDR001V1 C2f SOT-89 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L PD54003L-E PD84001 EP 603 | |
PD54003L
Abstract: DB-54003L-235
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DB-54003L-235 PD54003L 235MHz DB-54003L-235 | |
W316
Abstract: Diode W316
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DB-54003L-512 PD54003L DB-54003L-512 W316 Diode W316 | |
100B ZenerContextual Info: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE |
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DB-54003L-880 PD54003L DB-54003L-880 PD54003L 100B Zener | |
panasonic inductor date code
Abstract: PD54003L C17AH DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH
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DB-54003L-175A PD54003L DB-54003L-175A panasonic inductor date code PD54003L C17AH EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH | |
3214W-1-103E
Abstract: DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes
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DB-54003L-880 PD54003L DB-54003L-880 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes | |
st 54003
Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
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PD54003L-E 2002/95/EC PD54003L-E st 54003 TRANSISTOR AO SMD MARKING J-STD-020B | |
Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection |
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PD54003L-E 2002/95/EC PD54003L-E |