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    10088054-003LF
    		Amphenol Communications Solutions HCI® Connector System, Power Supply Connectors, 10DC+24S Right Angle Header. PDF
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    		Amphenol Communications Solutions Modular Jack, Input Output Connectors, Cat 3, Vertical, Through Mount, Unshielded Diamond Peg, 6 Positions, 1 Port PDF
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    		Amphenol Communications Solutions PV® Wire-to-Board Connector System, Wire to Board, 2.54mm (0.1inch) Centerline Crimp-to-Wire PV Receptacle Housing, Single Row, Polarized. PDF
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    		Amphenol Communications Solutions Minitek® Multipitch™,1.25mm Crimp-to-Wire Connector Platform, Cable Receptacle, 3 Position, Without TPA & CPA PDF
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    		Amphenol Communications Solutions PwrBlade+®,Power Connectors, Right Angle, Receptacle, 2ACP 12S 2ACP PDF
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    ST 54003 Price and Stock

    Lumberg Automation

    Lumberg Automation RST 5L-RKT 5L-1031/38 M

    Sensor Cables / Actuator Cables RST 5L-RKT 5L-1031/38 M
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    Mouser Electronics RST 5L-RKT 5L-1031/38 M
    • 1 $464.06
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    ST 54003 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DB-54003L-470

    Abstract: JESD97 PD54003L-E PD54003L
    Contextual Info: DB-54003L-470 RF POWER amplifier using 1 x PD54003L-E N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 57% - 61% ■ Load mismatch: 20:1


    Original     		db-54003l-470pd54003l-e470mhzjesd97+1pd54003l PDF

    PD54003L

    Abstract: PD5400
    Contextual Info: DB-54003L-930 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 930 MHz ■ Supply voltage: 5V ■ Output power: 1.5W ■ Efficiency: 51% - 55% ■ Load mismatch: 20:1


    Original     		db-54003l-930pd54003lpd5400 PDF

    PD54003L

    Contextual Info: DB-54003L-512 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 54% - 63% ■ Load mismatch: 20:1


    Original     		db-54003l-512pd54003l PDF

    PD54003L

    Contextual Info: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		db-54003l-175apd54003l175mhzdb-54003-470+1pd54003 PDF

    DB-54003L-930

    Abstract: JESD97 PD54003L
    Contextual Info: DB-54003L-930 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 930 MHz ■ Supply voltage: 5V ■ Output power: 1.5W ■ Efficiency: 51% - 55% ■ Load mismatch: 20:1


    Original     		db-54003l-930pd54003ljesd97 PDF

    PD5400

    Contextual Info: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 67% - 75%


    Original     		db-54003l-175apd54003l175mhzpd5400 PDF

    DB-54003L-512

    Abstract: JESD97 PD54003L
    Contextual Info: DB-54003L-512 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 54% - 63% ■ Load mismatch: 20:1


    Original     		db-54003l-512pd54003ljesd97 PDF

    EEVHB1V100P

    Abstract: BZX284C5V1 DB-54003L-175A EXCELDRC35C GRM42-6C0G102J50 PD54003L
    Contextual Info: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		db-54003l-175apd54003l175mhzeevhb1v100p+3bzx284c5v1exceldrc35cgrm42-6c0g102j50 PDF

    Contextual Info: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1


    Original     		db-54003-470pd54003470mhz PDF

    BZX284C5V1

    Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
    Contextual Info: DB-54003L-175A RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175 MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		db-54003l-175apd54003lbzx284c5v1eevhb1v100p+2exceldrc35cgrm42-6c0g102j50 PDF

    smd c8f

    Abstract: GRM1885C1H3R9CZ01 PD54003L murata REEL label RF amplifer smd c2f AB-54003L-512 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E
    Contextual Info: AB-54003L-512 2 stages RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2V ■ Output power: 4W ■ Current < 1.6A ■ Input power < 10dBm


    Original     		ab-54003l-512pd84001pd54003l-e10dbm+11-70dbcsteval-tdr001v1ab-54003l-51andsmd c8fgrm1885c1h3r9cz01pd54003lmurata reel labelrf amplifersmd c2fgrm1885c1h2r2cz01grm1885c1h3r3cz01 PDF

    diode 1-35 j2

    Abstract: DB-54003L-175 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
    Contextual Info: DB-54003L-175 RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.5V ■ Output power: > 5W ■ Efficiency: 64% - 73% ■ Load mismatch: 20:1


    Original     		db-54003l-175pd54003ldiode 1-35 j2db-54003l-175a+3eevhb1v100pexceldrc35cgrm42-6c0g102j50 PDF

    capacitor 330pF ATC

    Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-54003-470 EXCELDRC35C PD54003 355nH
    Contextual Info: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1


    Original     		db-54003-470pd54003470mhzcapacitor 330pf atc+7rf power amplifier circuit by 400-470mhz3214w-1-103ea03tjb09tjbzx284c5v1exceldrc35c355nh PDF

    j655

    Abstract: 151j CAPACITOR grm42-6 cog 101 DB-54003L-235 EEVHB1V100P EXCELDRC35C GRM42-6 PD54003L 102J 100B390JW
    Contextual Info: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■


    Original     		db-54003l-235pd54003l235mhzj655+7151j capacitorgrm42-6 cog 101eevhb1v100pexceldrc35cgrm42-6102j100b390jw PDF

    PD54003L

    Abstract: DB-54003L-175 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 resistor 1K 5w GRM42-6C0G121J50 diode smd 1-35 j2
    Contextual Info: DB-54003L-175 RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent Thermal Stability ■ Frequency: 135 - 175 MHz ■ Supply Voltage: 7.5V ■ Output Power: > 5W ■ Efficiency: 64% - 73% ■ Load Mismatch: 20:1


    Original     		db-54003l-175pd54003ldb-54003l-175aeevhb1v100p+5exceldrc35cgrm42-6c0g102j50resistor 1k 5wgrm42-6c0g121j50diode smd 1-35 j2 PDF

    Diode W316

    Abstract: 102J DB-54003L-512 EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460
    Contextual Info: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1


    Original     		db-54003l-512pd54003ldiode w316102j+6exceldrc35cgrm42-6tl11w-309w309fr460 PDF

    C2f SOT-89

    Abstract: AB-54003L-512 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L PD54003L-E PD84001 EP 603
    Contextual Info: AB-54003L-512 2 stages RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2V ■ Output power: 4W ■ Current < 1.6A ■ Input power < 10dBm


    Original     		ab-54003l-512pd84001pd54003l-e10dbm+7-70dbcsteval-tdr001v1c2f sot-89grm1885c1h2r2cz01grm1885c1h3r3cz01pd54003lep 603 PDF

    PD54003L

    Abstract: DB-54003L-235
    Contextual Info: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■


    Original     		db-54003l-235pd54003l235mhz PDF

    W316

    Abstract: Diode W316
    Contextual Info: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1


    Original     		db-54003l-512pd54003lw316diode w316 PDF

    100B Zener

    Contextual Info: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		db-54003l-880pd54003l100b zener PDF

    panasonic inductor date code

    Abstract: PD54003L C17AH DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH
    Contextual Info: DB-54003L-175A RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 155 - 175 MHz SUPPLY VOLTAGE


    Original     		db-54003l-175apd54003lpanasonic inductor date codec17ah+5eevhb1v100pexceldrc35cgrm42-6c0g102j50panasonic capacitor date codespanasonic inductor date code nh PDF

    3214W-1-103E

    Abstract: DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes
    Contextual Info: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		db-54003l-880pd54003l3214w-1-103eeevhb1v100p+5exceldrc35cgrm42-6c0g102j50gp diodezener diode 5.1 vpanasonic capacitor date codes PDF

    st 54003

    Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
    Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


    Original     		pd54003l-e2002/95/ecst 54003transistor ao smd marking+1j-std-020b PDF

    Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


    Original     		pd54003l-e2002/95/ec PDF