SSSMINI3-F1 TRANSISTOR Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40)

2SC5846

Contextual Info: Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 2 0.15 min. 1 0.23+0.05 –0.02 0.40 (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C

2SC5846G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1

2SC5846

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the

2SC5846G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 di p Pl lan nclu ea e se pla m d m des

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Features ■ Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1