SSMINI 5 Search Results

SSMIni

Abstract: SS-Mini SSMini 5
Contextual Info: Protection from Surge SSMini-5pin T.V.S. Diode TV068E20W060 „ Overview Unit : mm Newly developed T.V.S. (Transient Voltage Suppressor) Diode with SSMini-5pin package against lightning/ESD. 1.60 ±0.05 0.6 +0.05 -0.03 1.00 ±0.05 5° 1.60 ±0.05 1.20 ±0.05

Contextual Info: Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 1.20±0.05  Two elements incorporated into one package Transistors with built-in resistor  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 5 4 1.20±0.05  Two elements incorporated into one package Transistors with built-in resistor  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 5 4 1.20±0.05  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 5 4 1.20±0.05  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

UP0187BG

Contextual Info: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Features  Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package  SSMini type package, reduction of the mounting area and assembly cost

UP04112

Abstract: UNR2112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 1.20±0.05  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112G Silicon PNP epitaxial planar type For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 1.20±0.05  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: DATA SHEET Part No. AN34070A Package Code No. SSMINI-5DA Publication date: June 2008 SDB00163AEB 1 AN34070A Contents „ Overview ………………………………………………….…………………………………………………………. 3

up04212

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212G Silicon NPN epitaxial planar type For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

PEMD4

Abstract: BC847B PEMD13 pemd9 PEMD6 PEMB4 PEMD12 PEMH11 PBSS3515VS BZA820A
Contextual Info: New DIMENSIONS AND RECOMMENDED SOLDER LANDS FOR REFLOW SOLDERING SOT66x packages: dimensions in mm • SOT666: 6 leads • SOT665: 5 leads • SOT663: 3 leads SOT663 Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

UN412Y

Abstract: UN421D UN421E UN421L UN511D UN511E UN511F UN511L UN511M UN521D
Contextual Info: - 338 - m % UN412Y tt töT _ ffl « Digital Wik&fä Ta=25T;, *EP(äTc=25T; VcBO Vc e o iC(DC) (V) (V) (A) -50 _ Pc* (W) (W) m ICBO (max) <WA) VcB (V) m (min) hp m & 14 (max) Vc e (V) (Ta=25'C) Ic /I e (A) OTOtyp (max) (V) -50 -0. 5 0.3 -1 -50 50 -10 -0.1

Contextual Info: New Achieving lower electrical power for smaller mobile phones 200mA Class Low VF Schottky barrier diode MA2SD31 „ Overview Unit: mm 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.60±0.05 1.20+0.05 –0.03 0.01±0.01 5˚ 0.60 (0.60) 0.80±0.05

Contextual Info: New Achieving lower electrical power for smaller mobile phones 200mA Class Low IR Schottky barrier diode MA2SD32 „ Overview Unit: mm 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.60±0.05 1.20+0.05 –0.03 0.01±0.01 5˚ 0.60 (0.60) 0.80±0.05

YTS2222A

Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Contextual Info: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60

2SD2620J

Abstract: VEBO-15V
Contextual Info: Transistors 2SD2620J Silicon NPN epitaxial planer type For low-frequency amplification 1.60+0.05 –0.03 1.00±0.05 • Features 0.12+0.03 –0.01 5° Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

S-Mini

Abstract: SSMini s-mini 2-pin package
Contextual Info: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes

SSMIni

Abstract: MA2S367 SS-Mini
Contextual Info: Variable Capacitance Diodes MA2S367 Silicon epitaxial planar type Unit : mm For AFC of UHF and VHF electronic tuner 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.27 − 0.02 • Large capacitance ratio • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and

SSMini

Contextual Info: Panasonic S w itc h in g Diodes MA137 Silicon epitaxial planer type Unit : mm For high-speed switching circuits 0.80 0 .8 0 ± 0.05 I Features Small SS-Mini type package with two incorporated elements, en­ abling high-density mounting Series connection in package

SS-Mini 3

Contextual Info: Panasonic Z e n e r D io d e s MAZS0470G Silicon p la n er type Constant voltage, constant current, waveform cripper and surge absorption circuit • Features • SS-Mini type package 2-pin • Vz= 4.45 to 4.83V Absolute Maximum Ratings (Ta=25°C) Parameter