SSM6N58NU Search Results
SSM6N58NU Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| SSM6N58NU |
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Transistors - Mosfets | Original | 234.93KB | 9 | ||
| SSM6N58NU |
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Japanese - Transistors - Mosfets | Original | 335.32KB | 9 | ||
| SSM6N58NU,LF |
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FETs - Arrays, Discrete Semiconductor Products, MOSF DL N CH 30V 4A UDFN6 | Original | 9 |
SSM6N58NU Price and Stock
Toshiba America Electronic Components SSM6N58NU,LFMOSFET 2N-CH 30V 4A 6UDFN |
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SSM6N58NU,LF | Digi-Reel | 64,183 | 1 |
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SSM6N58NU,LF | Tape & Reel | 6,000 | 3,000 |
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SSM6N58NU,LF | 2,578 |
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SSM6N58NU,LF | 99 | 61 |
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SSM6N58NU,LF | Cut Strips | 99 | 12 Weeks | 1 |
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SSM6N58NU,LF | Reel | 3,000 |
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Toshiba America Electronic Components SSM6N58NU,LF(BTrans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP |
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SSM6N58NU,LF(B | 3,000 | 239 |
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SSM6N58NU,LF(B | 4,720 |
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Toshiba America Electronic Components SSM6N58NU,LF(TTrans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP T/R |
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SSM6N58NU,LF(T | 3,000 | 187 |
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SSM6N58NU,LF(T | Cut Tape | 4,320 | 1 |
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SSM6N58NU,LF(T | 25 Weeks, 5 Days | 3,000 |
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SSM6N58NU,LF(T | Cut Tape | 3,000 | 0 Weeks, 1 Days | 5 |
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SSM6N58NU,LF(T | 15 Weeks | 3,000 |
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Toshiba America Electronic Components SSM6N58NULF(TSMALL SIGNAL FIELD-EFFECT TRANSISTOR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSM6N58NULF(T | 16,323 |
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Toshiba America Electronic Components SSM6N58NU |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSM6N58NU | 156,400 |
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SSM6N58NU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SSM6N58NUContextual Info: SSM6N58NU MOSFETs Silicon N-Channel MOS SSM6N58NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) |
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SSM6N58NU SSM6N58NU | |
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Contextual Info: SSM6N58NU MOSFETs Silicon N-Channel MOS SSM6N58NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) |
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Contextual Info: SSM6N58NU MOSFET シリコンNチャネルMOS形 SSM6N58NU 1. 用途 • パワーマネジメントスイッチ用 • DC-DCコンバータ用 2. 特長 1 1.8 V駆動です。 (2) オン抵抗が低い。 : RDS(ON) = 84 mΩ (最大) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (最大) (@VGS = 2.5 V) |
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SSM6N58NU | |
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Contextual Info: SSM6N58NU MOSFETs Silicon N-Channel MOS SSM6N58NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) |
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SSM6N58NU | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 |