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    SSM6N56FE Search Results

    SSM6N56FE Datasheets (1)

    Toshiba Semiconductor and Storage
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSM6N56FE,LM
    		Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 20V 0.8A Original PDF 204.16KB
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    SSM6N56FE Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components SSM6N56FE,LM

    MOSFET 2N-CH 20V 0.8A ES6
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    DigiKey () SSM6N56FE,LM Digi-Reel 429 1
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    SSM6N56FE,LM Cut Tape 429 1
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    SSM6N56FE,LM Tape & Reel 4,000
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    Avnet Americas SSM6N56FE,LM Tape & Reel 24,000 12 Weeks 4,000
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    Mouser Electronics () SSM6N56FE,LM 72,379
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    SSM6N56FE,LM 23,399
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    Verical SSM6N56FE,LM 218 103
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    Arrow Electronics SSM6N56FE,LM Cut Strips 218 12 Weeks 1
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    Toshiba America Electronic Components SSM6N56FE,LM(T

    Trans MOSFET N-CH Si 20V 0.8A 6-Pin ES T/R
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    Verical SSM6N56FE,LM(T 8,000 8,000
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    Arrow Electronics SSM6N56FE,LM(T 8,000 16 Weeks 8,000
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    Newark SSM6N56FE,LM(T Cut Tape 2,995 1
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    TME SSM6N56FE,LM(T 8,000 4,000
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    Avnet Asia SSM6N56FE,LM(T 36 Weeks 4,000
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    EBV Elektronik SSM6N56FE,LM(T 4,000 17 Weeks 4,000
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    Toshiba America Electronic Components SSM6N56FE,LAPM(T

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    Quest Components SSM6N56FE,LAPM(T 3,157
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    SSM6N56FE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SSM6N56FE MOSFETs Silicon N-Channel MOS SSM6N56FE 1. Applications • High-Speed Switching 2. Features 1 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA)


    Original     		SSM6N56FE PDF