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    SSM6J414TU Search Results

    SSM6J414TU Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSM6J414TU
    		Toshiba SSM6J414 - TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Original PDF 220.51KB 9
    SSM6J414TU,LF
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P CH 20V 6A UF6 Original PDF 9
    SF Impression Pixel

    SSM6J414TU Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components SSM6J414TU,LF

    MOSFET P CH 20V 6A UF6
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    DigiKey () SSM6J414TU,LF Cut Tape 1,177 1
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    SSM6J414TU,LF Digi-Reel 1,177 1
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    SSM6J414TU,LF Reel 3,000
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    Avnet Americas SSM6J414TU,LF Reel 16 Weeks 3,000
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    Mouser Electronics SSM6J414TU,LF 3,465
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    Toshiba America Electronic Components SSM6J414TU,LF(B

    SSM6J414TU,LF(B
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    Verical SSM6J414TU,LF(B 11,200 288
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    Quest Components SSM6J414TU,LF(B 8,960
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    Toshiba America Electronic Components SSM6J414TU,LF(T

    Trans MOSFET P-CH Si 20V 6A 6-Pin UF T/R
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    Verical SSM6J414TU,LF(T 3,612 196
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    Chip One Stop SSM6J414TU,LF(T Cut Tape 3,612 0 Weeks, 1 Days 5
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    Toshiba America Electronic Components SSM6J414TU,LF(T (U-MOSVI SERIES)

    Mosfet, P-Channel, 20V, 6A, Sot-363F Rohs Compliant: Yes |Toshiba SSM6J414TU, LF(T
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    Newark SSM6J414TU,LF(T (U-MOSVI SERIES) Cut Tape 30 5
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    SSM6J414TU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SSM6J414TU

    Contextual Info: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM6J414TU SSM6J414TU PDF

    Contextual Info: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM6J414TU PDF

    SSM6J414TU

    Contextual Info: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM6J414TU SSM6J414TU PDF

    Contextual Info: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM6J414TU PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF